Infineon Technologies IPI100N08S207AKSA1
- Part No.:
- IPI100N08S207AKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI100N08S207AKSA1.pdf
- Description:
- MOSFET N-CH 75V 100A TO262-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IPI100N08S207AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified OptiMOS™ power MOSFET in PG-TO262-3-1 package, rated for 75 V VDS, 100 A continuous drain current at TC = 25 °C, and ultra-low 5.8–7.1 mΩ RDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested-used in high-current DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the IPI100N08S207AKSA1 datasheet, IPI100N08S207AKSA1 pinout, IPI100N08S207AKSA1 application, or IPI100N08S207AKSA1 equivalent, key selection criteria include its AEC-Q101 qualification, 0.5 K/W RthJC, 810 mJ single-pulse avalanche energy, and gate charge profile (Qg = 144–200 nC) for hard-switching efficiency in 12 V/24 V automotive power stages.
Technical Context
This MOSFET employs trench-based silicon technology optimized for low conduction loss and fast switching in unidirectional high-current paths. Its gate threshold voltage (2.1–4.0 V) enables robust drive compatibility with standard 5 V and 10 V logic-level controllers, while the 580 pF Crss and 4700 pF Ciss support predictable turn-on/turn-off timing under 2.2 Ω gate resistance.
The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 90–110 ns reverse recovery time, enabling synchronous rectification and freewheeling operation without external diodes in buck and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications |
| RDS(on) max | 7.1 mΩ at VGS = 10 V, ID = 80 A - Enables ≤7.1 W conduction loss at 100 A in thermally optimized layouts |
| ID continuous | 100 A at TC = 25 °C - Supports high-power motor drivers and starter solenoid interfaces |
| EAS | 810 mJ - Withstands single-pulse inductive energy surges in relay and solenoid drive circuits |
| Qg | 144–200 nC - Determines gate driver power requirement and switching transition time in PWM stages |
| Tj max | +175 °C - Allows operation in under-hood environments without derating in engine control units |
| RthJC | 0.5 K/W - Enables direct heatsink mounting for thermal management in compact power modules |
Pinout & Package
Package: PG-TO262-3-1 - Insulated through-hole variant of TO-262 with isolated tab, compatible with standard TO-220 heatsinks and manual assembly processes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path collector | Electrically connected to metal tab; requires insulated mounting when referenced to non-ground potentials |
| Source | Current return node | Low-impedance reference for gate drive and current sensing; tied to PCB ground plane |
| Gate | Control terminal | High-impedance input requiring <200 nC total charge for full enhancement; sensitive to ESD |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications per stress test requirements |
| 100% avalanche tested | Guarantees ruggedness against inductive switching failures without external snubbers |
| MSL1 rating | Suitable for lead-free reflow up to 260 °C peak, supporting modern SMT-compatible assembly |
| Green package | Lead-free and RoHS-compliant construction with halogen-free molding compound |
| Ultra-low RDS(on) | Reduces conduction losses by >30% vs. prior-generation 80 V MOSFETs at same current density |
Applications
| Engine Control Unit (ECU) Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of fuel injector coils in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling coil energization/de-energization with precise 1–5 ms pulse width. Use Value: 7.1 mΩ RDS(on) minimizes heat generation during repetitive 10 A pulses, extending ECU lifetime under hood temperatures up to 150 °C. | Use Scenario: Primary-side switching element in 12 V to 5 V/3.3 V buck converter for infotainment power supply. IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 200–500 kHz with 100 A peak current capability. Use Value: 810 mJ avalanche energy absorbs leakage inductance spikes during turn-off, eliminating need for clamping diodes in cost-sensitive designs. |
| Electric Power Steering (EPS) Motor Phase Leg | 12 V Starter Solenoid Interface |
Use Scenario: Half-bridge high-side/low-side switching in brushless EPS motor gate drivers. IC Role / Device Role / Timing Role: Low-side MOSFET in three-phase inverter delivering up to 80 A RMS phase current. Use Value: 0.5 K/W RthJC allows direct heatsink attachment, maintaining <125 °C junction temperature during sustained assist torque events. | Use Scenario: Solid-state replacement for mechanical starter solenoid contactor in start-stop systems. IC Role / Device Role / Timing Role: High-current latching switch handling 300–400 A pulsed cranking loads. Use Value: 400 A pulsed drain rating and 175 °C operation ensure reliable engagement even after repeated cold-cranking cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP100N08S2-07 | Same die, PG-TO220-3-1 package; higher RthJA (62 K/W) and no isolation between tab and drain | Better suited for lower-power, non-isolated board-mounted applications with accessible heatsinking | Select when mechanical mounting constraints favor TO-220 footprint and isolation is not required |
| IPB100N08S2-07 | Same die, PG-TO263-3-2 surface-mount package; identical RDS(on) but requires reflow-compatible layout | Optimized for automated SMT production and space-constrained modules like ADAS ECUs | Select when volume manufacturing and board area reduction outweigh through-hole assembly advantages |
Compared with IPP100N08S2-07 and IPB100N08S2-07, the IPI100N08S207AKSA1 provides electrical equivalence with enhanced thermal interface via isolated TO-262 packaging-ideal for retrofitting legacy TO-220 designs where creepage/clearance or heatsink isolation is critical.
Availability
IPI100N08S207AKSA1 is available at Aetrix Electronics and suitable for automotive engine control, electric power steering, and 12 V/24 V DC-DC conversion requiring stable component supply across extended temperature and lifecycle demands.
Supply support for IPI100N08S207AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS™ 2nd generation 75 V power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive powertrain and chassis systems.
FAQ
What is the maximum gate-source voltage rating for IPI100N08S207AKSA1?
The absolute maximum gate-source voltage is ±20 V, qualified at both −20 V and +20 V per AEC-Q101 stress testing. Exceeding this range risks permanent gate oxide damage. Recommended operating VGS is 10 V for full enhancement, with 5.4 V gate plateau voltage confirmed in gate charge curves.
Does IPI100N08S207AKSA1 include an integrated body diode, and what are its key parameters?
Yes, it features a monolithic body diode with 80 A continuous forward current rating, 0.9–1.3 V forward voltage at 80 A and 25 °C, and 90–110 ns reverse recovery time under 100 A/µs di/dt. These values enable freewheeling in inductive loads without external diodes in half-bridge configurations.
How does the thermal resistance RthJC of 0.5 K/W translate to real-world heatsink design?
With 0.5 K/W junction-to-case resistance, a 100 A load at 7.1 mΩ yields ~71 W conduction loss; using a 1.0 K/W heatsink yields ~106 K total rise, keeping Tj below 175 °C at 70 °C ambient. This enables compact passive cooling in space-limited ECU enclosures.
Is IPI100N08S207AKSA1 suitable for use in safety-critical automotive systems?
It is AEC-Q101 qualified and rated for 175 °C operation, making it appropriate for ASIL-B systems like engine management and EPS. However, Infineon explicitly restricts use in life-support devices without written approval-designers must perform FMEDA and ISO 26262 hardware analysis for ASIL-C/D integration.
IPI100N08S207AKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.1mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI100N08S207AKSA1 FAQ
1.How can I place an order for IPI100N08S207AKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI100N08S207AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI100N08S207AKSA1 reliable?
The price and inventory of IPI100N08S207AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI100N08S207AKSA1 is usually 5 days.
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IPI100N08S207AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI100N08S207AKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI100N08S207AKSA1?
For technical support, including IPI100N08S207AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI100N08S207AKSA1 requirements.
6.How does Aetrix verify that IPI100N08S207AKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI100N08S207AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI100N08S207AKSA1 meets industry standards.
7.What is the process for return or replacement of IPI100N08S207AKSA1?
All IPI100N08S207AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI100N08S207AKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI100N08S207AKSA1 part is unused and in its original packaging.
Return procedure for IPI100N08S207AKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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