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Infineon Technologies IPI100P03P3L-04

Part No.:
IPI100P03P3L-04
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI100P03P3L-04.pdf
Description:
MOSFET P-CH 30V 100A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,243

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Product details

Overview

IPI100P03P3L-04 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET designed for reverse battery protection in automotive and industrial power systems. It features a -30 V VDS, 4.5 mΩ typical RDS(on) at VGS = -4.5 V and ID = -50 A, 100% avalanche tested, AEC-Q101 qualified, and operates up to +175 °C junction temperature.

For engineers reviewing the IPI100P03P3L-04 datasheet, IPI100P03P3L-04 pinout, IPI100P03P3L-04 application, or IPI100P03P3L-04 equivalent, key selection criteria include its ultra-low on-resistance under logic-level gate drive, robust thermal performance (RthJC = 0.65 K/W), and validated reverse-battery protection capability in 12 V/24 V vehicle electrical architectures.

Technical Context

This device implements Infineon's OptiMOS®-P trench process for optimized conduction and switching trade-offs in high-current P-channel configurations. Its gate threshold voltage range of -1.0 V to -2.1 V enables reliable turn-on with standard 3.3 V or 5 V logic controllers, while the integrated body diode supports bidirectional current handling in protection circuits.

The MOSFET is characterized for pulsed drain currents up to -400 A and single-pulse avalanche energy of 450 mJ at ID = -80 A, confirming ruggedness against load dump and polarity reversal transients. Thermal design is enabled by its PG-TO262-3-1 package with low junction-to-case resistance and defined PCB cooling requirements (6 cm² copper area).

Key Specifications

ParameterValue and Actual Design Meaning
VDS-30 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with margin against load dump spikes
RDS(on) max @ VGS = -4.5 V7.3 mΩ - Ensures <150 mW conduction loss at 50 A, enabling compact thermal design without active cooling
ID continuous @ TC = 100 °C-100 A - Sustains full rated current in engine bay environments with minimal derating
EAS single pulse450 mJ - Withstands repetitive reverse-battery connection events without degradation
RthJC0.65 K/W - Enables direct heatsink mounting for efficient power dissipation in high-density layouts
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock per JESD22
VGS(th) range-1.0 V to -2.1 V - Guarantees turn-on with 3.3 V microcontrollers and avoids false triggering near ground

Pinout & Package

Package: PG-TO262-3-1 - Surface-mount variant with isolated drain tab, optimized for automated assembly and high-current PCB routing. Pin 1: Gate; Pin 2: Drain; Pin 3: Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives logic-level negative voltage to fully enhance channel; low input capacitance (Ciss typ. 7150 pF) minimizes driver power demand
Pin 2 (Drain)High-side power pathConnected to battery positive; electrically isolated metal tab enables direct thermal interface to heatsink or copper pour
Pin 3 (Source)Reference nodeConnected to system ground or load return; defines gate-source voltage reference for accurate threshold control

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced down to -4.5 V VGS, eliminating need for charge pump or level-shifter in 3.3 V/5 V controller designs
100% avalanche testedEach unit validated for single-pulse energy handling up to 450 mJ, ensuring field reliability in uncontrolled polarity events
AEC-Q101 qualificationComplies with stress test requirements for automotive electronics, including HTGB, HTRB, and temperature cycling
Green RoHS-compliant packageHalogen-free, lead-free construction meets EU Directive 2011/65/EU and IPC/JEDEC J-STD-020 MSL1 rating (260 °C peak reflow)
Ultra-low RDS(on)3.0 mΩ typ. at VGS = -10 V / ID = -80 A reduces conduction losses by >40% versus legacy P-channel MOSFETs in same footprint

Applications

Automotive Reverse Battery ProtectionIndustrial DC Power Input Protection

Use Scenario: Prevents damage when vehicle battery is connected with reversed polarity during service or jump-starting.

IC Role / Device Role / Timing Role: High-side P-channel switch placed between battery terminal and main power rail; activated only when polarity is correct.

Use Value: Eliminates need for series diode, reducing voltage drop from ~0.7 V to <50 mV at 100 A, preserving system efficiency and cold-cranking margin.

Use Scenario: Safeguards programmable logic controllers (PLCs) and motor drives from incorrect field wiring in factory automation cabinets.

IC Role / Device Role / Timing Role: Standalone reverse-polarity guard at 24 V DC input stage, operating independently of system controller.

Use Value: Withstands repeated 400 A surge pulses without latch-up or parametric shift, enabling maintenance-free operation over 10+ year equipment lifetimes.

12 V/24 V Telematics Power ManagementOff-Board EV Charger Input Stage

Use Scenario: Protects GPS, cellular, and CAN modules in fleet tracking units exposed to harsh vehicle electrical noise and jump-start conditions.

IC Role / Device Role / Timing Role: Always-on protection element upstream of LDOs and PMICs; must remain functional across -40 °C to +105 °C ambient.

Use Value: Guaranteed operation at 175 °C junction temperature allows placement near engine compartment harnesses without thermal throttling or derating.

Use Scenario: Secures AC/DC power supply input in outdoor-rated EV charging stations where field technicians may misconnect DC input cables.

IC Role / Device Role / Timing Role: Primary polarity enforcement device before bulk capacitors and isolation stages; handles up to 100 A continuous load.

Use Value: Low RDS(on) limits self-heating to <3.5 °C/W rise at full load, avoiding thermal shutdown during extended charging sessions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-battery protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB100P03P3L-04Same die, TO-263-3-2 package; 0.65 K/W RthJC identical but drain tab geometry differs for through-hole vs. SMD mountingRequires PCB cutout for drain tab; better suited for manual repair or prototyping boardsSelect when board assembly uses reflow-only processes and thermal pad access is constrained
IPP100P03P3L-04Same die, TO-220-3-1 package; higher RthJC (0.75 K/W) due to leadframe construction; no isolated drain tabLimited to lower-power applications (<60 A continuous) or forced-air cooled systemsSelect when cost sensitivity outweighs thermal performance and through-hole assembly is preferred

Compared with IPB100P03P3L-04 and IPP100P03P3L-04, the IPI100P03P3L-04 offers identical electrical specs and AEC-Q101 qualification but delivers optimal thermal performance in surface-mount production environments via its PG-TO262-3-1 package and dedicated thermal pad layout.

Availability

IPI100P03P3L-04 is available at Aetrix Electronics and suitable for automotive reverse battery protection, industrial DC input safeguarding, and telematics power management requiring stable component supply across extended product lifecycles.

Supply support for IPI100P03P3L-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-P trench MOSFET product line, engineered specifically for high-efficiency, high-reliability P-channel switching in automotive and industrial power protection applications.

FAQ

What is the maximum safe operating temperature for IPI100P03P3L-04?

The device is rated for continuous operation up to +175 °C junction temperature, with storage temperature spanning -55 °C to +175 °C. Its AEC-Q101 qualification confirms reliability under automotive thermal cycling profiles, and thermal resistance data (RthJC = 0.65 K/W) enables precise junction temperature calculation using measured case temperature and power dissipation.

Does IPI100P03P3L-04 require a gate resistor for stability?

A gate resistor of 10 Ω to 47 Ω is recommended to dampen ringing during switching transitions, especially in high-di/dt applications like reverse-battery protection. The device's Ciss (7150 pF typ.) and Qg (150 nC typ.) make it susceptible to oscillation without proper gate drive impedance control, particularly when driven by low-output-impedance microcontrollers.

Can IPI100P03P3L-04 be used in parallel configurations?

Yes - its positive temperature coefficient for RDS(on) (increasing ~0.5%/°C) ensures inherent current sharing when paralleled. Layout symmetry, matched gate drive paths, and individual source resistors (10–20 mΩ) are required to balance dynamic current distribution and prevent shoot-through during turn-on/turn-off transitions.

Is the body diode suitable for freewheeling in inductive loads?

The integrated body diode has VSD = -0.6 V to -1.2 V at -80 A and trr = 50 ns typ., making it usable for low-frequency freewheeling. However, its Qrr = 55 nC and softness factor limit suitability for high-frequency synchronous rectification; external Schottky diodes are preferred above 100 kHz switching.

IPI100P03P3L-04 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 475µA
Gate Charge (Qg) (Max) @ Vgs:
200 nC @ 10 V
Vgs (Max):
+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
9300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI100P03P3L-04 FAQ

1.How can I place an order for IPI100P03P3L-04 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI100P03P3L-04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI100P03P3L-04 reliable?

The price and inventory of IPI100P03P3L-04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI100P03P3L-04 is usually 5 days.

3.What payment methods are accepted for IPI100P03P3L-04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI100P03P3L-04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI100P03P3L-04?

IPI100P03P3L-04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI100P03P3L-04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI100P03P3L-04?

For technical support, including IPI100P03P3L-04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI100P03P3L-04 requirements.

6.How does Aetrix verify that IPI100P03P3L-04 is sourced from the original manufacturer or authorized distributors?

All IPI100P03P3L-04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI100P03P3L-04 meets industry standards.

7.What is the process for return or replacement of IPI100P03P3L-04?

All IPI100P03P3L-04 units undergo pre-shipment inspection (PSI). If there is an issue with IPI100P03P3L-04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI100P03P3L-04 part is unused and in its original packaging.

Return procedure for IPI100P03P3L-04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI100P03P3L-04 Tags

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