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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI120N04S302AKSA1

Name: IPI120N04S302AKSA1
Brand: Infineon Technologies
SKU: IPI120N04S302AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI120N04S302AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI120N04S302AKSA1.pdf

Description:: MOSFET N-CH 40V 120A TO262-3

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Product details

Overview

IPI120N04S302AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO262-3-1 package, rated for 40 V V_DS, 120 A continuous drain current at T_C = 100 °C, and ultra-low 1.35–2.3 mΩ R_DS(on) (SMD version). It operates up to 175 °C, is AEC-Q101 qualified, and is used in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPI120N04S302AKSA1 datasheet, IPI120N04S302AKSA1 pinout, IPI120N04S302AKSA1 application, or IPI120N04S302AKSA1 equivalent, key selection criteria include its 0.5 K/W junction-to-case thermal resistance, 160–210 nC total gate charge, 1880 mJ single-pulse avalanche energy, and integrated body diode with 70 ns t_rr and 145 nC Q_rr.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive power nets. Its gate threshold voltage (2.1–4.0 V) enables robust drive compatibility with standard 5 V and 10 V logic-level controllers, while its 11,000–14,300 pF input capacitance and 470–710 pF reverse transfer capacitance support fast, controlled switching at up to 100 kHz in synchronous buck topologies.

The MOSFET integrates a co-packaged freewheeling diode with 0.83–1.2 V forward voltage at 80 A and 25 °C, and exhibits stable R_DS(on) over temperature (±25% variation from −55 °C to 175 °C), enabling predictable thermal design in under-hood environments without derating penalties typical of older planar devices.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load-dump transients.
R_DS(on) max	2.3 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1.8 W conduction loss at 120 A, reducing heatsink requirements.
I_D continuous	120 A @ T_C = 100 °C - Sustains full-rated current in high-ambient engine bay locations with minimal thermal margin.
E_AS	1880 mJ - Withstands single-pulse inductive energy from 80 A loads without failure, eliminating need for external snubbers.
Q_g total	160–210 nC - Determines gate driver power requirement; supports efficient 100 kHz switching with ≤2 W driver dissipation.
t_r/t_f	19 ns / 18 ns - Enables fast edge control to minimize switching overlap loss in synchronous rectification.
V_GS(th)	2.1–4.0 V - Ensures reliable turn-on with standard microcontroller GPIOs and avoids false triggering near ground noise.

Pinout & Package

Package: PG-TO262-3-1 (3-pin TO-262 variant with isolated tab, lead-free, RoHS-compliant, MSL1 rated to 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for main current	Low-inductance connection point for PCB source plane; ties directly to ground plane in high-frequency layouts.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD-must be routed away from noisy traces.
Pin 3 (Drain)	Main power output node	Internally connected to metal tab; requires direct thermal interface to heatsink via soldered or clamped mounting.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per ISO/TS 16949.
100% avalanche tested	Each unit subjected to single-pulse inductive stress test at rated I_D and V_DS, ensuring field reliability in motor fault conditions.
Ultra-low R_DS(on)	1.35 mΩ typical (SMD version) reduces conduction loss by >35% vs. prior-gen 40 V MOSFETs at same die size.
Integrated body diode	Optimized for fast recovery (t_rr = 70 ns, Q_rr = 145 nC) to minimize shoot-through risk in half-bridge configurations.
175 °C operation	Enables placement in compact enclosures near heat sources without thermal throttling or lifetime degradation.

Applications

Engine Start-Stop Control

Automotive DC-DC Converter

Use Scenario: Replaces mechanical starter relay with solid-state switch that engages/disengages starter motor during idle-stop cycles.

IC Role / Device Role / Timing Role: High-side power switch controlling 12 V starter solenoid coil; handles 120 A inrush and 480 A pulsed loads.

Use Value: Eliminates contact wear and arcing, extends system life beyond 100,000 cycles, and enables precise timing control within ±10 ms.

Use Scenario: Primary synchronous rectifier in 12 V → 5 V/3.3 V buck converter powering ADAS camera modules and radar processors.

IC Role / Device Role / Timing Role: Low-side switch operating at 200 kHz with 50% duty cycle; manages 80 A average output current.

Use Value: Achieves >95% efficiency at full load due to sub-2 mΩ R_DS(on), reducing thermal load on adjacent SoCs by 3.2 W.

Electric Power Steering (EPS) H-Bridge

12 V Battery Disconnect Switch

Use Scenario: One quadrant of dual-H-bridge driving 3-phase EPS motor via external gate drivers and current sensing.

IC Role / Device Role / Timing Role: High-current quadrant switch handling bidirectional 100 A peak currents with fast dead-time control.

Use Value: Supports <5 µs dead time without shoot-through thanks to tight t_r/t_f matching and low Crss.

Use Scenario: Isolates auxiliary battery bank from main vehicle bus during deep discharge or fault events.

IC Role / Device Role / Timing Role: Single-pole, high-current disconnect switch activated by BCM command; rated for 120 A continuous, 480 A surge.

Use Value: Provides fail-safe isolation with <100 µs response time and no contact bounce, meeting ISO 16750-2 pulse 4a requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB120N04S3-02	Same die, PG-TO263-3-2 package with exposed drain pad; R_thJC = 0.5 K/W identical but PCB thermal path differs.	Better suited for surface-mount designs with large copper pour; less suitable for through-hole prototyping or heatsink-clamped assemblies.	Select when board space is constrained and automated SMT assembly is used.
IPP120N04S3-02	Same die, PG-TO220-3-1 package; identical electrical specs but higher R_thJA (62 K/W) and no MSL1 reflow rating.	Used in serviceable modules or legacy chassis-mounted power supplies where manual replacement is required.	Select when field-replaceability or through-hole mounting is mandatory and peak reflow is not needed.

Compared with IPB120N04S3-02 and IPP120N04S3-02, IPI120N04S302AKSA1 offers identical silicon performance in a through-hole-compatible PG-TO262 package with MSL1 reflow capability-ideal for hybrid assembly lines requiring both automated and manual processes without sacrificing thermal or reliability specs.

Availability

IPI120N04S302AKSA1 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across multi-year production programs.

Supply support for IPI120N04S302AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion-targeting start-stop systems, EPS, and ADAS power domains where thermal robustness and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPI120N04S302AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. For reliable switching, maintain V_GS between 4.5 V (guaranteed turn-on) and 12 V (optimal R_DS(on) with margin against overshoot). Gate driver circuits must include clamping diodes or Zener protection.

Does IPI120N04S302AKSA1 require a heatsink in automotive applications?

Yes-a heatsink is mandatory for continuous 120 A operation. At T_C = 100 °C, junction temperature reaches 175 °C with only 0.5 K/W R_thJC; without external cooling, case temperature will exceed safe limits within seconds. A minimum 15 cm² aluminum heatsink with thermal interface material is recommended for sustained 80 A loads in still air.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.83–1.2 V at 80 A and t_rr = 70 ns, which is slower and higher-V_F than a 40 V Schottky (e.g., 0.45 V, <10 ns). However, it eliminates component count and layout complexity in half-bridge freewheeling paths where moderate recovery loss is acceptable-no external diode is needed unless <20 ns t_rr is required.

Is IPI120N04S302AKSA1 suitable for 48 V mild-hybrid systems?

No-it is rated for 40 V V_DS, making it unsuitable for nominal 48 V bus applications where transients exceed 60 V. For 48 V systems, Infineon's 60 V OptiMOS™ 5 series (e.g., IPB60R125P7) is specified; using this 40 V device risks catastrophic avalanche failure during load dump or regenerative braking events.

IPI120N04S302AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI120N04S302AKSA1 FAQ

1.How can I place an order for IPI120N04S302AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI120N04S302AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI120N04S302AKSA1 reliable?

The price and inventory of IPI120N04S302AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI120N04S302AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI120N04S302AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI120N04S302AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI120N04S302AKSA1?

IPI120N04S302AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI120N04S302AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI120N04S302AKSA1?

For technical support, including IPI120N04S302AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI120N04S302AKSA1 requirements.

6.How does Aetrix verify that IPI120N04S302AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI120N04S302AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI120N04S302AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI120N04S302AKSA1?

All IPI120N04S302AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI120N04S302AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI120N04S302AKSA1 part is unused and in its original packaging.

Return procedure for IPI120N04S302AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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