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Infineon Technologies IPI120N04S4-01M
- Part No.:
- IPI120N04S4-01M
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
IPI120N04S4-01M.pdf
- Description:
- MOSFET N-CH TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,094
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Product details
Overview
IPI120N04S4-01 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO262-3-1 package, rated for 40 V VDS, 120 A continuous drain current at TC = 100 °C, and 1.5 mΩ max RDS(on) (SMD version). It operates up to 175 °C junction temperature, supports 480 A pulsed drain current, and is 100% avalanche tested for robustness in automotive power switching applications.
For engineers reviewing the IPI120N04S4-01 datasheet, IPI120N04S4-01 pinout, IPI120N04S4-01 application, or IPI120N04S4-01 equivalent, key selection criteria include its low RDS(on) at high current, MSL1 reflow compatibility, integrated body diode performance (VSD = 0.9–1.3 V @ 100 A), and thermal resistance (RthJC = 0.8 K/W) for high-power motor control and DC-DC converter designs.
Technical Context
This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while the 5.3 V gate plateau voltage ensures stable Miller region control during hard-switching.
The MOSFET features a fully characterized reverse recovery behavior (trr = 64 ns, Qrr = 88 nC) and dynamic parameters including Ciss = 10.77–14 nF, Coss = 2.45–3.15 nF, and Qg = 135–176 nC, supporting high-frequency synchronous rectification and PWM motor drive topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V battery rail systems with transient margin |
| RDS(on), max (SMD) | 1.5 mΩ - Enables ≤180 W conduction loss at 120 A, critical for high-efficiency inverters |
| ID, cont @ TC=100°C | 120 A - Sustained output current capability under engine bay thermal conditions |
| EAS, single pulse | 750 mJ - Avalanche energy rating verified per JEDEC JESD24-11, ensuring ruggedness in inductive load switching |
| RthJC | 0.8 K/W - Low junction-to-case thermal resistance enabling direct heatsink mounting without thermal interface degradation |
| trr / Qrr | 64 ns / 88 nC - Fast, low-charge body diode enabling efficient synchronous buck operation without external Schottky |
| VGS(th) | 2.0–4.0 V - Threshold range compatible with both 3.3 V and 5 V microcontroller gate drivers |
Pinout & Package
Package: PG-TO262-3-1 - 3-pin through-hole variant of TO-262 with isolated tab, designed for high-current PCB mounting and mechanical robustness in automotive modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for main current | Low-inductance connection point for source loop closure; tied to PCB ground plane |
| Pin 2 (Gate) | Control input for channel conduction | High-impedance node requiring <5 Ω series gate resistor to suppress oscillation during fast switching |
| Pin 3 (Drain) | Main power output terminal | Internally connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications per stress test requirements |
| 100% avalanche tested | Each unit subjected to single-pulse EAS stress at production test, eliminating latent failure risk |
| MSL1 rating (260°C peak reflow) | Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns |
| 175°C maximum operating temperature | Enables placement near hot components (e.g., exhaust manifolds, power inductors) without derating |
| Green Product (RoHS compliant) | Meets EU Directive 2011/65/EU with no exemptions required for hazardous substances |
Applications
| Automotive Motor Control | 12 V DC-DC Converters |
|---|---|
Use Scenario: High-side switch in 12 V BLDC fan or pump driver module mounted on engine control unit PCB. IC Role / Device Role / Timing Role: Main power switch controlling phase current with PWM frequency up to 20 kHz. Use Value: 1.5 mΩ RDS(on) reduces conduction loss by >35% vs. legacy 2.2 mΩ devices, lowering thermal design burden. | Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V step-down converter for ADAS camera module. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, commutated at 500 kHz. Use Value: 64 ns trr and 88 nC Qrr minimize reverse recovery loss and EMI generation during dead-time transitions. |
| Start-Stop Battery Management | Electric Power Steering (EPS) |
Use Scenario: Load switch isolating auxiliary battery during engine cranking to prevent voltage sag. IC Role / Device Role / Timing Role: High-current, low-RDS(on) pass element controlled via dedicated PMIC gate driver. Use Value: 120 A continuous rating at 100 °C case temperature ensures uninterrupted operation during extended cranking events. | Use Scenario: Inverter half-bridge leg in 12 V EPS assist motor drive with regenerative braking. IC Role / Device Role / Timing Role: Bidirectional power switch handling both motoring and regeneration currents. Use Value: 750 mJ EAS rating withstands inductive kickback during rapid torque reversal without clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB120N04S4-01 | PG-TO263-3-2 package; identical die, lower RthJA (40 K/W on 6 cm² PCB) | Better suited for surface-mount designs with limited board space and forced-air cooling | Select when PCB layout favors SMD mounting and thermal management uses copper area rather than heatsink |
| IPP120N04S4-01 | PG-TO220-3-1 package; same die, higher RthJA (62 K/W), non-isolated tab | Preferred for cost-sensitive through-hole assemblies with bolted heatsinks and manual assembly | Select when mechanical robustness and field-replaceability outweigh thermal optimization needs |
Compared with IPB120N04S4-01 and IPP120N04S4-01, the IPI120N04S4-01 offers identical electrical performance in a PG-TO262-3-1 package-optimized for automated through-hole insertion with moderate thermal performance between the SMD and TO-220 variants.
Availability
IPI120N04S4-01 is available at Aetrix Electronics and suitable for automotive motor control, 12 V DC-DC converters, start-stop battery management, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.
Supply support for IPI120N04S4-01 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to the OptiMOS®-T2 product line-designed specifically for high-current, low-voltage automotive power switching where conduction loss, thermal reliability, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum allowable gate-source voltage for IPI120N04S4-01?
The absolute maximum gate-source voltage is ±20 V. Operation beyond this rating risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 5.3 V gate plateau voltage ensuring stable switching transition during Miller effect.
Does IPI120N04S4-01 have an integrated body diode, and what are its key parameters?
Yes, it includes a monolithic body diode rated for 120 A continuous forward current and 480 A pulsed current. At 100 A and 25 °C, forward voltage is 0.9–1.3 V, with reverse recovery time of 64 ns and charge of 88 nC-enabling use in synchronous rectification without external diodes.
Is IPI120N04S4-01 suitable for hot-swap applications?
Yes-its 100% avalanche-tested construction (750 mJ EAS) and 175 °C operating temperature make it suitable for hot-swap circuits where inrush current and load-dump transients occur. However, external gate resistors and TVS protection on the drain are recommended for sustained overvoltage events.
How does the PG-TO262-3-1 package differ thermally from PG-TO263-3-2?
PG-TO262-3-1 has RthJC = 0.8 K/W (same as TO263), but RthJA is 62 K/W on minimal footprint versus 40 K/W for TO263 on 6 cm² copper. The TO262's through-hole leads limit PCB heat spreading, making it less effective than TO263 in SMD thermal designs but more robust mechanically in vibration-prone environments.
IPI120N04S4-01M Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
IPI120N04S4-01M FAQ
1.How can I place an order for IPI120N04S4-01M through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI120N04S4-01M on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI120N04S4-01M reliable?
The price and inventory of IPI120N04S4-01M are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI120N04S4-01M is usually 5 days.
3.What payment methods are accepted for IPI120N04S4-01M?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI120N04S4-01M transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI120N04S4-01M?
IPI120N04S4-01M orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI120N04S4-01M order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI120N04S4-01M?
For technical support, including IPI120N04S4-01M datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI120N04S4-01M requirements.
6.How does Aetrix verify that IPI120N04S4-01M is sourced from the original manufacturer or authorized distributors?
All IPI120N04S4-01M products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI120N04S4-01M meets industry standards.
7.What is the process for return or replacement of IPI120N04S4-01M?
All IPI120N04S4-01M units undergo pre-shipment inspection (PSI). If there is an issue with IPI120N04S4-01M, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI120N04S4-01M part is unused and in its original packaging.
Return procedure for IPI120N04S4-01M:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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