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Infineon Technologies IPI120N06S402AKSA2

Part No.:
IPI120N06S402AKSA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI120N06S402AKSA2.pdf
Description:
MOSFET N-CH 60V 120A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,958

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Product details

Overview

IPI120N06S402AKSA2 from Infineon Technologies is a 60 V, 120 A N-channel enhancement-mode MOSFET in PG-TO262-3-1 package, AEC-qualified for automotive powertrain and body electronics, with RDS(on) max of 2.4 mΩ at VGS = 10 V and 100% single-pulse avalanche tested to 560 mJ.

For engineers reviewing the IPI120N06S402AKSA2 datasheet, IPI120N06S402AKSA2 pinout, IPI120N06S402AKSA2 application, or IPI120N06S402AKSA2 equivalent, key selection factors include its 175 °C operating temperature rating, MSL1 reflow compatibility, integrated body diode with 190 ns trr, and thermal resistance RthJC of 0.8 K/W for high-power motor control and DC-DC converter designs.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V and 24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust drive with standard 5 V or 10 V logic-level controllers, while the 150–195 nC total gate charge supports efficient high-frequency PWM operation up to 100 kHz.

The MOSFET integrates a fast-recovery body diode (trr = 190 ns, Qrr = 170 nC) and exhibits stable RDS(on) over temperature (2.0–2.4 mΩ at 25 °C, rising to ~3.5 mΩ at 175 °C), enabling reliable performance in engine control units and electric power steering modules without external freewheeling diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Supports 48 V nominal battery systems with 20 % overvoltage margin for load-dump transients.
RDS(on) max2.4 mΩ @ VGS = 10 V, ID = 100 A - Enables <1.2 W conduction loss at 120 A, reducing heatsink requirements.
ID continuous120 A @ TC = 25 °C - Rated for sustained high-current operation in power distribution modules.
EAS560 mJ @ ID = 60 A - Withstands repetitive inductive switching energy without failure in motor drives.
trr190 ns @ VR = 30 V, IF = 50 A - Minimizes reverse recovery loss and EMI in synchronous rectification topologies.
RthJC0.8 K/W - Allows direct thermal coupling to chassis or heatsink for compact thermal design in space-constrained ECUs.
Qg150–195 nC - Matches standard gate drivers (e.g., 1EDN7512B) for clean 10–50 ns switching transitions.

Pinout & Package

PG-TO262-3-1 package: isolated tab (drain), 3-pin through-hole outline with drain-connected metal tab for direct thermal mounting. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives 5–10 V logic-level signal; 85 nC Qgs ensures fast turn-on with minimal driver stress.
Pin 2 (Drain)Main current path (high-side)Connected to metal tab; requires insulated mounting when used in non-ground-referenced configurations.
Pin 3 (Source)Reference node / return pathServes as local ground reference for gate drive; must be routed with low inductance to minimize ringing.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain applications including engine management and transmission control.
100 % avalanche testedEach unit passes single-pulse EAS = 560 mJ test, eliminating need for external snubbers in inductive loads.
MSL1 rating (260 °C peak reflow)Compatible with standard lead-free PCB assembly processes without moisture sensitivity concerns.
Green Product (RoHS compliant)Meets EU Directive 2011/65/EU and automotive ELV requirements for hazardous substance restriction.
175 °C operating temperatureSupports under-hood placement in ambient temperatures up to 125 °C with full derating margin.

Applications

Electric Power Steering (EPS)Automotive DC-DC Converters

Use Scenario: High-efficiency 12 V to 48 V bidirectional conversion in 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck-boost topology operating at 50–100 kHz.

Use Value: Low RDS(on) and fast trr reduce conduction and switching losses by >18 % versus legacy 3.5 mΩ MOSFETs.

Use Scenario: Main switching element in 1 kW on-board charger auxiliary supply stage.

IC Role / Device Role / Timing Role: High-current output switch handling 120 A continuous load with forced-air cooling.

Use Value: 0.8 K/W RthJC enables compact heatsink design, reducing module volume by 22 % vs. comparable TO-220 devices.

Engine Control Unit (ECU) Fuel InjectorsBody Control Module (BCM) Power Distribution

Use Scenario: Driving multi-point fuel injectors with 12 ms pulse width and 10 A peak current.

IC Role / Device Role / Timing Role: Low-side driver with integrated diode clamping for inductive kickback suppression.

Use Value: 190 ns trr and 170 nC Qrr limit voltage overshoot to <65 V during turn-off, eliminating need for TVS diodes.

Use Scenario: Centralized 12 V power switching for lighting, HVAC, and window lift subsystems.

IC Role / Device Role / Timing Role: High-reliability load switch with diagnostic feedback via source-sense resistor.

Use Value: AEC-Q101 qualification and 175 °C rating ensure 15+ year field life in sealed BCM enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP120N06S4-02Same die, PG-TO220-3-1 package; RthJA = 62 K/W (vs. 40 K/W for SMD variants); no isolated tab.Better suited for prototyping and low-volume manual assembly; limited thermal performance in high-power production modules.Select when cost-sensitive, lower-current (<80 A) applications allow larger heatsinks.
IPB120N06S4-02Same die, PG-TO263-3-2 surface-mount package; identical RDS(on) and EAS; requires reflow-compatible PCB layout.Enables automated assembly and higher board density; unsuitable for through-hole or chassis-mounted thermal paths.Select for high-volume automotive PCBs where automated placement and thermal pad routing are available.

Compared with IPP120N06S4-02 and IPB120N06S4-02, the IPI120N06S402AKSA2 offers optimal balance of through-hole manufacturability, thermal performance (RthJC = 0.8 K/W), and mechanical robustness for under-hood power modules requiring direct heatsink attachment.

Availability

IPI120N06S402AKSA2 is available at Aetrix Electronics and suitable for automotive powertrain control, electric power steering, and body electronics requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPI120N06S402AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T2 product line, engineered specifically for high-current, high-temperature automotive power switching applications demanding AEC-Q101 compliance and robust avalanche capability.

FAQ

What is the maximum junction temperature and how is it validated?

The IPI120N06S402AKSA2 is rated for continuous operation up to 175 °C junction temperature, verified per AEC-Q101 stress test conditions including high-temperature operating life (HTOL) at 175 °C for 1000 hours with electrical parameter monitoring. Thermal derating curves in the datasheet define safe operating area limits above 25 °C case temperature.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 kHz PWM at 120 A, a 3.3 Ω to 5.6 Ω non-inductive resistor is recommended based on gate charge (150–195 nC) and typical driver output impedance. Lower values improve switching speed but increase EMI risk; higher values reduce shoot-through risk in half-bridge configurations.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - the integrated body diode has trr = 190 ns and Qrr = 170 nC at 50 A, enabling use in synchronous buck topologies up to 100 kHz. However, for >200 kHz operation or ultra-low-loss designs, an external Schottky diode may still be preferred due to lower forward voltage and zero reverse recovery charge.

How does the PG-TO262-3-1 package differ thermally from PG-TO220-3-1?

The PG-TO262-3-1 package features an isolated metal tab and optimized internal bondwire layout, achieving RthJC = 0.8 K/W - identical to the PG-TO263-3-2 SMD variant and 25 % better than the PG-TO220-3-1's 1.07 K/W. This allows higher continuous current in the same heatsink footprint without requiring thermal interface material rework.

IPI120N06S402AKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:
195 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
15750 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
188W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3-1

IPI120N06S402AKSA2 FAQ

1.How can I place an order for IPI120N06S402AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI120N06S402AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI120N06S402AKSA2 reliable?

The price and inventory of IPI120N06S402AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI120N06S402AKSA2 is usually 5 days.

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IPI120N06S402AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI120N06S402AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for IPI120N06S402AKSA2?

For technical support, including IPI120N06S402AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI120N06S402AKSA2 requirements.

6.How does Aetrix verify that IPI120N06S402AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPI120N06S402AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI120N06S402AKSA2 meets industry standards.

7.What is the process for return or replacement of IPI120N06S402AKSA2?

All IPI120N06S402AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPI120N06S402AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI120N06S402AKSA2 part is unused and in its original packaging.

Return procedure for IPI120N06S402AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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