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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI120N08S403AKSA1

Name: IPI120N08S403AKSA1
Brand: Infineon Technologies
SKU: IPI120N08S403AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI120N08S403AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI120N08S403AKSA1.pdf

Description:: MOSFET N-CH 80V 120A TO262-3

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Product details

Overview

IPI120N08S403AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO262-3-1 package, rated for 80 V V_DS, 2.5 mΩ max R_DS(on) at 10 V V_GS, 120 A continuous drain current, and 175 °C operating temperature - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPI120N08S403AKSA1 datasheet, IPI120N08S403AKSA1 pinout, IPI120N08S403AKSA1 application, or IPI120N08S403AKSA1 equivalent, key selection criteria include avalanche ruggedness (920 mJ single-pulse E_AS), thermal resistance (0.54 K/W R_thJC), gate charge profile (128–167 nC Q_g), and diode forward voltage (0.9–1.3 V at 100 A).

Technical Context

This device implements a trench-gate, superjunction-based silicon MOSFET architecture optimized for low conduction and switching losses in high-current 12 V/24 V automotive systems. Its 2.1–2.5 mΩ R_DS(on) (SMD version) and 177–354 pF Crss enable efficient operation in hard-switched synchronous rectification and H-bridge motor drives.

Thermal design is supported by MSL1-rated packaging and 0.54 K/W junction-to-case resistance, allowing sustained 120 A conduction at T_C = 100 °C. The integrated body diode features 80 ns t_rr and 160 nC Q_rr, enabling reliable freewheeling in inductive loads without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 12 V/24 V automotive battery rails with 2× safety margin against load dump transients
R_DS(on) max	2.5 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 120 A, critical for thermally constrained modules
I_D continuous	120 A @ T_C = 100 °C - matches peak current demands of 3–5 kW traction inverters and starter generators
E_AS	920 mJ @ I_D = 60 A - provides robust single-pulse avalanche capability for inductive turn-off stress
Q_g	128–167 nC - determines gate drive power requirement and switching speed trade-off in 20–100 kHz PWM stages
t_r/t_f	15 ns / 50 ns - enables fast edge control to minimize overlap loss in half-bridge configurations
V_GS(th)	2.0–4.0 V - ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

Package: PG-TO262-3-1 - through-hole variant with isolated tab, compatible with standard TO-220 heatsink mounting and automated insertion processes.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, electrically connected to package backside	Requires insulated mounting or direct heatsink contact; carries full load current and dissipates >95% of thermal load
Source	Reference node for gate drive and current sensing	Low-inductance connection essential for stable switching; used as shunt reference in high-side sensing topologies
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nC gate charge; sensitive to ESD and requires RC snubbing in noisy environments

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per ISO/TS 16949
100% avalanche tested	Each unit subjected to controlled single-pulse avalanche stress to guarantee minimum 920 mJ energy handling
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak, eliminating moisture sensitivity concerns during PCB assembly
Integrated body diode	Optimized for fast recovery (t_rr = 80 ns) and low Q_rr (160 nC), reducing reverse recovery loss in synchronous rectifiers
175 °C operation	Enables placement near heat sources (e.g., IGBTs, transformers) without derating in engine control units and ADAS ECUs

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS)

Use Scenario: Step-down conversion from 48 V mild-hybrid bus to 12 V auxiliary supply in PHEV platforms.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in interleaved 2-phase buck topology operating at 100–150 kHz.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.2 mΩ parts, enabling >96% efficiency at 150 A output.

Use Scenario: H-bridge motor driver for 300–500 W brushless steering assist motors.

IC Role / Device Role / Timing Role: Low-side switch in dual active bridge configuration with 20 kHz PWM and bidirectional current flow.

Use Value: 120 A continuous rating and 480 A pulsed capability support peak torque surges without thermal shutdown.

Onboard Charger (OBC) PFC Stage

12 V Starter Generator Control

Use Scenario: Boost switch in 3.3 kW two-stage OBC with active clamp flyback front-end.

IC Role / Device Role / Timing Role: Fast-switching main switch with gate plateau voltage of 4.9 V ensuring stable Miller immunity at 65 kHz.

Use Value: 177–354 pF Crss minimizes voltage-dependent capacitance variation, improving line regulation across 9–16 V input range.

Use Scenario: High-current commutation switch in 12 V belt-driven starter generator for stop-start systems.

IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) configured switch managing motor/generator mode transitions.

Use Value: 175 °C junction rating allows operation at ambient >105 °C inside engine bay enclosures without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB120N08S4-03	PG-TO263-3-2 surface-mount package; identical electrical specs but 0.05 mm lower R_thJC (0.49 K/W)	Preferred for automated SMT lines and compact power modules where board space is constrained	Select when PCB assembly uses reflow only and thermal interface to heatsink is via solder paste or thermal pad
IPP120N08S4-03	PG-TO220-3-1 package; same die but higher R_thJC (0.62 K/W); 10% higher R_DS(on) tolerance band	Suitable for cost-sensitive aftermarket replacements and prototyping with manual heatsink mounting	Select when mechanical compatibility with legacy TO-220 footprints is required and thermal margin >15 °C exists

Compared with IPB120N08S4-03 and IPP120N08S4-03, IPI120N08S403AKSA1 offers optimal balance of thermal performance (0.54 K/W), through-hole manufacturability, and AEC-Q101 compliance - making it the default choice for production-grade automotive power stages where reliability and serviceability coexist.

Availability

IPI120N08S403AKSA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and onboard charger designs requiring stable component supply across extended vehicle lifecycles.

Supply support for IPI120N08S403AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line - engineered specifically for high-efficiency, high-reliability 12 V/24 V/48 V automotive power systems demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPI120N08S403AKSA1?

The absolute maximum V_GS is ±20 V, with recommended operating range limited to –12 V to +15 V for long-term reliability. Exceeding ±20 V risks permanent gate oxide damage, especially during transient events like ESD or inductive kickback. Gate drive circuits must include clamping diodes or Zener protection to enforce this limit under all conditions.

Does IPI120N08S403AKSA1 require a negative gate voltage for turn-off in high-noise environments?

No - its V_GS(th) range (2.0–4.0 V) and 100 nA I_GSS leakage ensure robust turn-off with 0 V gate bias. However, applying –5 V enhances noise immunity in EPS or OBC applications with high dv/dt (>50 V/ns), reducing risk of spurious turn-on due to Miller coupling during adjacent switch transitions.

How does the body diode performance compare to discrete Schottky diodes in freewheeling applications?

The integrated body diode delivers 0.9–1.3 V V_SD at 100 A and 80 ns t_rr, outperforming most 120 A Schottky diodes in reverse recovery charge (Q_rr = 160 nC vs. >300 nC typical). While forward voltage is higher than Schottky, its monolithic integration eliminates parasitic inductance and simplifies layout - critical for high-frequency (>50 kHz) freewheeling paths.

Can IPI120N08S403AKSA1 be paralleled with identical units for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (α ≈ 0.4 mΩ/°C) ensures inherent current sharing stability. Successful paralleling requires matched gate drive impedance (<5 Ω difference), symmetrical PCB layout (≤2 mm trace length mismatch), and shared thermal interface to maintain ΔT_j < 5 °C between devices. Derate total current by 15% for six-sigma reliability.

IPI120N08S403AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 223µA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI120N08S403AKSA1 FAQ

1.How can I place an order for IPI120N08S403AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI120N08S403AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI120N08S403AKSA1 reliable?

The price and inventory of IPI120N08S403AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI120N08S403AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI120N08S403AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI120N08S403AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI120N08S403AKSA1?

IPI120N08S403AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI120N08S403AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI120N08S403AKSA1?

For technical support, including IPI120N08S403AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI120N08S403AKSA1 requirements.

6.How does Aetrix verify that IPI120N08S403AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI120N08S403AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI120N08S403AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI120N08S403AKSA1?

All IPI120N08S403AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI120N08S403AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI120N08S403AKSA1 part is unused and in its original packaging.

Return procedure for IPI120N08S403AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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