Infineon Technologies IPI120N10S403AKSA1
- Part No.:
- IPI120N10S403AKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI120N10S403AKSA1.pdf
- Description:
- MOSFET N-CH 100V 120A TO262-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,857
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Product details
Overview
IPI120N10S403AKSA1 from Infineon Technologies is a 100 V, 120 A N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, qualified to AEC-Q101, rated for 175 °C operation, with RDS(on) max of 3.5 mΩ at VGS = 10 V and 100% single-pulse avalanche tested - used in high-current automotive DC-DC converters and motor control inverters.
For engineers reviewing the IPI120N10S403AKSA1 datasheet, IPI120N10S403AKSA1 pinout, IPI120N10S403AKSA1 application, or IPI120N10S403AKSA1 equivalent, key selection criteria include thermal resistance (RthJC = 0.6 K/W), gate charge (Qg = 108–140 nC), reverse diode forward voltage (VSD = 1.0–1.3 V), and safe operating area under pulsed conditions.
Technical Context
This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched topologies. Its 3.5 mΩ RDS(on) enables high-efficiency 12 V/48 V automotive systems, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge configurations.
The MOSFET features a gate threshold voltage (VGS(th)) of 2.0–3.5 V, ensuring robust turn-on with standard 10 V gate drivers, and exhibits stable dynamic parameters across temperature: Ciss = 7780–10120 pF, Qgd = 21–42 nC, and tr/tf ≤ 10 ns / 40 ns at ID = 120 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V battery systems with 2× safety margin against transients |
| RDS(on) max | 3.5 mΩ at VGS = 10 V, Tj = 25 °C - enables <1.2 W conduction loss at 120 A |
| ID continuous | 120 A at TC = 100 °C - sustains full load in compact heatsink designs |
| EAS | 770 mJ at ID = 60 A - withstands repetitive inductive switching stress without derating |
| RthJC | 0.6 K/W - allows direct thermal coupling to heatsink for high-power density layouts |
| Qg | 108–140 nC - determines gate driver current requirement (~1.4 A avg for 100 ns rise) |
| VSD | 1.0–1.3 V at IF = 100 A, Tj = 25 °C - defines freewheeling loss in H-bridge motor drives |
Pinout & Package
Delivered in PG-TO262-3-1 package (standard TO-262 variant with isolated tab), featuring three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal, tied to internal die substrate | Must be mounted to heatsink with electrically insulating but thermally conductive interface; carries full load current and dissipates >90% of heat |
| Source (Pin 1) | Reference node for gate drive and current sensing | Low-inductance connection required for stable switching; common return for gate driver ground and shunt resistor |
| Gate (Pin 2) | Control electrode for channel formation | Requires low-impedance gate driver (<5 Ω series resistance) to manage Qg = 108–140 nC within <100 ns |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling |
| 100% single-pulse avalanche tested | Guarantees ruggedness in inductive load switching without external snubbers in motor control and DC-DC phases |
| MSL1 rating up to 260 °C peak reflow | Enables compatibility with lead-free PCB assembly processes without moisture-related popcorning |
| 175 °C maximum junction temperature | Supports operation in engine bay environments with minimal thermal derating |
| Optimized gate charge profile | Qgd/Qgs ratio ~0.55 ensures controlled dV/dt and reduced Miller-induced shoot-through risk |
Applications
| Automotive DC-DC Converters | Electric Power Steering (EPS) |
|---|---|
Use Scenario: 12 V to 48 V bidirectional buck-boost conversion in mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side and low-side synchronous switch in interleaved 2-phase topology. Use Value: 3.5 mΩ RDS(on) reduces conduction loss by >35% vs. legacy 5 mΩ devices at 100 A, enabling >96% peak efficiency. | Use Scenario: Three-phase inverter driving 3 kW brushless DC motor in column-assist EPS. IC Role / Device Role / Timing Role: Low-side switch handling 120 A peak phase current with integrated body diode freewheeling. Use Value: VSD = 1.0–1.3 V minimizes freewheeling loss during PWM dead-time, reducing thermal stress on heatsink. |
| Onboard Charger (OBC) Primary Side | 48 V Battery Disconnect Switch |
Use Scenario: Active clamp flyback or LLC resonant converter primary switch in 6.6 kW OBC. IC Role / Device Role / Timing Role: Main switching element subjected to 80 V VDS stress and 120 A pulsed current. Use Value: EAS = 770 mJ ensures reliable operation under fault conditions like output short-circuit or startup surge. | Use Scenario: Solid-state main contactor replacement in 48 V energy storage systems. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch controlling battery pack isolation. Use Value: AEC-Q101 qualification and 175 °C rating guarantee functional safety compliance (ISO 26262 ASIL-B) in harsh underhood environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB120N10S4-03 | Same die, PG-TO263-3-2 package with exposed drain pad; RthJC = 0.6 K/W identical, but higher board-level thermal resistance due to SMD mounting | Better suited for automated SMT assembly; requires larger PCB copper area (6 cm²) for equivalent cooling | Select when PCB space constraints favor surface-mount layout and reflow compatibility is mandatory |
| IPP120N10S4-03 | Same die, PG-TO220-3-1 package; RthJC = 0.6 K/W, but lower mechanical robustness and no MSL1 rating | Used in cost-sensitive industrial SMPS where AEC-Q101 is not required | Select for non-automotive applications needing identical electrical performance with lower procurement cost |
Compared with IPB120N10S4-03 and IPP120N10S4-03, IPI120N10S403AKSA1 offers identical silicon performance in a through-hole PG-TO262 package with AEC-Q101 qualification and MSL1 reflow capability - making it optimal for automotive modules requiring mechanical reliability and manual repairability without sacrificing thermal or electrical specs.
Availability
IPI120N10S403AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and onboard chargers requiring stable component supply across multi-year vehicle production cycles.
Supply support for IPI120N10S403AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-reliability automotive power conversion - emphasizing low RDS(on), rugged avalanche capability, and AEC-Q101 compliance.
FAQ
What is the maximum allowable gate-source voltage for IPI120N10S403AKSA1?
The absolute maximum gate-source voltage is ±20 V. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement with margin; gate drivers must limit transient overshoot using clamping diodes or RC snubbers at the gate pin.
Does IPI120N10S403AKSA1 require external gate resistors in automotive motor drive applications?
Yes - a 4.7 Ω to 10 Ω series gate resistor is required to control dV/dt and suppress oscillation during switching. This value balances Qg-driven rise/fall times (~50–100 ns) against EMI and shoot-through risk in half-bridge configurations with fast gate drivers.
How does the body diode performance compare to discrete Schottky diodes in freewheeling use?
The integrated body diode has VSD = 1.0–1.3 V at 100 A and trr = 80 ns, resulting in higher conduction loss than a 45 V Schottky but superior ruggedness and zero reverse recovery charge. It is suitable for non-synchronous freewheeling where simplicity and cost outweigh efficiency optimization.
Can IPI120N10S403AKSA1 be paralleled with identical units for higher current capacity?
Yes - its positive temperature coefficient of RDS(on) (α ≈ 0.4%/°C) ensures inherent current sharing. Successful paralleling requires matched gate drive loop inductance (<10 nH), symmetrical PCB layout, and shared heatsink mounting to maintain ΔTj < 5 °C between devices.
IPI120N10S403AKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10120 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3-1
IPI120N10S403AKSA1 FAQ
1.How can I place an order for IPI120N10S403AKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI120N10S403AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI120N10S403AKSA1 reliable?
The price and inventory of IPI120N10S403AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI120N10S403AKSA1 is usually 5 days.
3.What payment methods are accepted for IPI120N10S403AKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI120N10S403AKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI120N10S403AKSA1?
IPI120N10S403AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI120N10S403AKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI120N10S403AKSA1?
For technical support, including IPI120N10S403AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI120N10S403AKSA1 requirements.
6.How does Aetrix verify that IPI120N10S403AKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI120N10S403AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI120N10S403AKSA1 meets industry standards.
7.What is the process for return or replacement of IPI120N10S403AKSA1?
All IPI120N10S403AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI120N10S403AKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI120N10S403AKSA1 part is unused and in its original packaging.
Return procedure for IPI120N10S403AKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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