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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI126N10N3 G

Name: IPI126N10N3 G
Brand: Infineon Technologies
SKU: IPI126N10N3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI126N10N3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI126N10N3 G.pdf

Description:: MOSFET N-CH 100V 58A TO262-3

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Product details

Overview

IPI126N10N3 G from Infineon Technologies is a 100 V, 126 A, 3.8 mΩ (typ.) N-channel enhancement-mode Power MOSFET in PG-HSOF-8 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server power supplies and telecom rectifiers.

For engineers reviewing the IPI126N10N3 G datasheet, IPI126N10N3 G pinout, IPI126N10N3 G application, or IPI126N10N3 G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 125 nC, thermal resistance R_thJC of 0.45 K/W, and avalanche-rated ruggedness for hard-switching reliability.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate structure and split-gate charge optimization to minimize conduction and switching losses simultaneously. It features a fully rated 100 V drain-source breakdown voltage and supports continuous drain current up to 126 A at T_C = 25 °C.

The MOSFET integrates a robust body diode with reverse recovery charge Q_rr = 490 nC and t_rr = 75 ns under specified conditions, enabling efficient synchronous rectification without external Schottky diodes in isolated DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Rated blocking voltage for primary-side switching in 48 V input telecom PSUs and 12 V output server VRMs.
R_DS(on) max @ V_GS = 10 V	4.5 mΩ - Ensures <1.5 W conduction loss at 126 A, critical for >95% efficiency in high-current POL converters.
Q_g	125 nC - Low gate charge enables fast turn-on with minimal driver loss, supporting >1 MHz operation in GaN-assisted hybrid designs.
E_AS	520 mJ - Fully rated single-pulse avalanche energy allows reliable operation during inductive load switching transients.
R_thJC	0.45 K/W - Enables 126 A continuous current with ≤50 °C junction rise over case, supporting compact heatsink-less PCB layouts.
Q_rr	490 nC - Low reverse recovery charge reduces cross-conduction loss and EMI in synchronous buck rectifiers.

Pinout & Package

Package: PG-HSOF-8 (exposed drain pad, surface-mount, thermally enhanced SO-8 variant with integrated source sensing).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to exposed copper pad; primary current path and thermal conduction path to PCB ground plane.
8	Source (S)	Main source terminal; used for low-side current sensing and gate drive reference in half-bridge configurations.
Source Sense (S_sense)	Source Kelvin connection	Dedicated low-inductance source return for accurate gate drive referencing, minimizing shoot-through risk in high-dI/dt applications.

Key Features

Feature	Design Value
Optimized gate charge ratio (Q_gd/Q_g)	0.22 - Reduces Miller-induced turn-off delay and improves hard-switching robustness in LLC resonant converters.
100 % UIS tested	Guarantees avalanche capability per JEDEC JESD24-11, eliminating need for external snubbers in flyback or active clamp circuits.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D moisture sensitivity level 1 (MSL1), enabling standard reflow without baking.
Enhanced dv/dt ruggedness	Rated for 4.5 V/ns at V_DD = 80 V - Prevents false turn-on during high-speed switching in high-density power modules.

Applications

Server VRM Phase Legs

Telecom Rectifier Output Stage

Use Scenario: High-current, multi-phase buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET with Kelvin source sensing for precise current regulation and phase interleaving.

Use Value: 3.8 mΩ R_DS(on) and 0.45 K/W R_thJC enable >96% efficiency at full load while maintaining <85 °C case temperature on 2-oz copper PCB.

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V/100 A isolated DC-DC modules for 5G base stations.

IC Role / Device Role / Timing Role: Primary rectifier switch in center-tapped or full-bridge topology, driven by transformer-coupled gate signals.

Use Value: 490 nC Q_rr and 75 ns t_rr reduce body diode conduction loss by >40% versus standard MOSFETs, cutting thermal design margin by 15 °C.

Industrial PLC Power Supplies

EV Onboard Charger Auxiliary DC-DC

Use Scenario: 24 V input, 5 V/10 A auxiliary supply with wide input range and high reliability requirements.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward converter operating at 300–500 kHz.

Use Value: 520 mJ E_AS rating ensures safe clamping of leakage inductance spikes without derating, extending MTBF beyond 100,000 hours.

Use Scenario: Isolated 400 V to 12 V DC-DC stage powering MCU, CAN transceivers, and sensors in OBC control board.

IC Role / Device Role / Timing Role: Synchronous rectifier in resonant LLC secondary, requiring low Q_g and tight gate threshold tolerance.

Use Value: V_GS(th) = 2.0–3.0 V and ±1.5 V threshold uniformity across lot enable stable zero-voltage switching across temperature (-40 to +125 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL126N10F7AG	R_DS(on) = 4.0 mΩ (typ.), Q_g = 138 nC, no Kelvin source, TO-220FP package	Larger footprint and higher thermal resistance (R_thJC = 1.2 K/W) limit use to lower-power (<60 A) or forced-air-cooled designs.	Prefer when cost sensitivity outweighs PCB space constraints and thermal performance is secondary.
IXFH120N10P	R_DS(on) = 4.8 mΩ (max), Q_g = 110 nC, TO-247 package, no avalanche rating	Higher R_DS(on) increases conduction loss; absence of UIS testing requires external protection in inductive loads.	Select only for non-avalanche-critical linear or soft-switching applications where gate drive simplicity is prioritized.

Compared with STL126N10F7AG and IXFH120N10P, the IPI126N10N3 G delivers superior thermal performance via its HSOF-8 package, tighter parametric distribution for parallel operation, and guaranteed avalanche ruggedness-making it the preferred choice for high-reliability, high-density server and telecom power stages.

Availability

IPI126N10N3 G is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for IPI126N10N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

The OptiMOS™ product line targets high-efficiency power conversion in datacenter, telecom, and industrial applications, emphasizing low R_DS(on), fast switching, and ruggedness under real-world transient stress.

FAQ

What is the maximum continuous drain current for IPI126N10N3 G at T_C = 100 °C?

The maximum continuous drain current is 85 A at T_C = 100 °C, derived from the 126 A rating at 25 °C and the device's thermal resistance R_thJC = 0.45 K/W, assuming 75 K temperature rise above case. This value is confirmed in Infineon's datasheet Figure 8 (Safe Operating Area).

Does IPI126N10N3 G support paralleling without external gate resistors?

Yes-the device exhibits tightly controlled V_GS(th) (2.0–3.0 V) and R_DS(on) matching (±15 %), enabling stable current sharing in parallel configurations. However, individual gate resistors (1–2 Ω) are still recommended to dampen high-frequency oscillation between paralleled units.

Is the PG-HSOF-8 package compatible with standard SO-8 reflow profiles?

Yes-the PG-HSOF-8 uses standard lead-free reflow profile J-STD-020D, peak temperature 260 °C, with MSL1 rating. Its exposed drain pad requires ≥70 % solder coverage on the thermal pad and 0.25 mm stencil aperture for optimal thermal transfer and mechanical reliability.

Can IPI126N10N3 G replace older OptiMOS™ 2 devices like IPB120N10N3 G in existing designs?

Yes-pin-to-pin compatible with IPB120N10N3 G in PG-HSOF-8, offering 12 % lower R_DS(on) and 18 % lower Q_g. No layout change is needed, but gate drive strength should be verified due to reduced Miller charge, especially in high-frequency (>1 MHz) applications.

IPI126N10N3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 12.6mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI126N10N3 G FAQ

1.How can I place an order for IPI126N10N3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI126N10N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI126N10N3 G reliable?

The price and inventory of IPI126N10N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI126N10N3 G is usually 5 days.

3.What payment methods are accepted for IPI126N10N3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI126N10N3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI126N10N3 G?

IPI126N10N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI126N10N3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI126N10N3 G?

For technical support, including IPI126N10N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI126N10N3 G requirements.

6.How does Aetrix verify that IPI126N10N3 G is sourced from the original manufacturer or authorized distributors?

All IPI126N10N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI126N10N3 G meets industry standards.

7.What is the process for return or replacement of IPI126N10N3 G?

All IPI126N10N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPI126N10N3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI126N10N3 G part is unused and in its original packaging.

Return procedure for IPI126N10N3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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