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Infineon Technologies IPI126N10N3GXKSA1
- Part No.:
- IPI126N10N3GXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI126N10N3GXKSA1.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:456
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Product details
Overview
IPI126N10N3GXKSA1 from Infineon Technologies is a 100 V, 126 A, D²PAK-7L (TO-263-7) discrete N-channel enhancement-mode power MOSFET optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs, telecom POL converters, and industrial SMPS. It features RDS(on) = 3.8 mΩ (typ.) at VGS = 10 V, Qg = 95 nC, and trise = 14 ns.
For engineers reviewing the IPI126N10N3GXKSA1 datasheet, IPI126N10N3GXKSA1 pinout, IPI126N10N3GXKSA1 application, or IPI126N10N3GXKSA1 equivalent, key selection criteria include low gate charge for ZVS/ZCS switching, thermally robust D²PAK-7L package with exposed drain pad, and specified avalanche energy rating (EAS = 530 mJ).
Technical Context
This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering optimized figure-of-merit (RDS(on) × Qg) of 361 mΩ·nC. Its vertical trench structure supports unclamped inductive switching (UIS) with guaranteed EAS and exhibits low reverse recovery charge (Qrr = 120 nC) and time (trr = 42 ns) for synchronous rectifier operation.
The device integrates a monolithic Kelvin source connection (pin 7) to eliminate source inductance impact on gate drive loop stability. Thermal resistance RthJC = 0.65 K/W (junction-to-case) is validated with 1 cm² 2-oz copper area under the exposed drain pad, enabling >100 W continuous power dissipation at TC = 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 48 V input bus applications with 2× safety margin |
| RDS(on) @ VGS = 10 V | 3.8 mΩ (typ.) - Enables <1.2 W conduction loss at 126 A DC output current |
| Qg | 95 nC - Supports efficient 500 kHz–1 MHz switching with standard gate drivers |
| EAS | 530 mJ - Rated single-pulse avalanche energy for reliable inductive load handling |
| trr | 42 ns - Minimizes reverse recovery losses in synchronous buck topologies |
| RthJC | 0.65 K/W - Confirmed with 1 cm² 2-oz Cu thermal pad; enables compact heatsink design |
| Qrr | 120 nC - Reduces cross-conduction losses during dead-time in half-bridge configurations |
Pinout & Package
Package: D²PAK-7L (TO-263-7), surface-mount, with isolated gate pad and Kelvin source terminal (pin 7). Exposed drain pad occupies 70% of bottom footprint for optimal thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 (Drain) | Main drain connection | Parallel drain terminals reduce current density and parasitic inductance in high-di/dt paths |
| 7 (Kelvin Source) | Sense return for gate driver reference | Eliminates source inductance effect on gate control loop, improving switching stability |
| 8 (Gate) | Control input | Standard MOSFET gate requiring 10 V drive; threshold VGS(th) = 2.0–3.5 V |
Key Features
| Feature | Design Value |
|---|---|
| Optimized RDS(on) × Qg | 361 mΩ·nC - Balances conduction and switching losses for 500 kHz–1 MHz DC-DC stages |
| Kelvin source configuration | Pin 7 dedicated sense path - Enables accurate gate-source voltage regulation independent of power source inductance |
| 100% UIS tested | Guaranteed EAS = 530 mJ - Ensures robustness against transient overcurrent without external snubbers |
| Low Qrr/trr | 120 nC / 42 ns - Reduces shoot-through risk and improves efficiency in synchronous rectification |
| Thermally enhanced D²PAK-7L | RthJC = 0.65 K/W - Validated with IPC-2152-compliant 1 cm² 2-oz Cu pad for production-relevant layout |
Applications
| Server VRM Output Stage | Telecom POL Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency 12 V → 0.8 V conversion in AI accelerator cards. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; operates with 500–800 kHz PWM and precise dead-time control. Use Value: 3.8 mΩ RDS(on) and 95 nC Qg enable >95% peak efficiency at 120 A while maintaining stable gate drive under 100 A/µs di/dt. |
Use Scenario: 48 V intermediate bus to 3.3 V/5 V point-of-load supply in 5G baseband units. IC Role / Device Role / Timing Role: Low-side switch in isolated flyback or non-isolated buck; driven by UCC27531-type gate driver. Use Value: 530 mJ EAS rating ensures reliability during line transients; 42 ns trr minimizes body-diode conduction loss during light-load burst mode. |
| Industrial SMPS Primary Switch | EV Onboard Charger Auxiliary Stage |
|
Use Scenario: 300–400 V DC link switching in 1–3 kW industrial AC-DC front-end supplies. IC Role / Device Role / Timing Role: Hard-switched primary-side MOSFET in LLC resonant half-bridge; operated below 300 kHz. Use Value: Robust UIS capability handles leakage inductance spikes; 0.65 K/W RthJC allows direct mounting to aluminum heatsink without thermal interface material. |
Use Scenario: 400 V DC–DC stage converting battery voltage to 12 V for vehicle control modules. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology; gated with transformer-coupled drive. Use Value: Kelvin source (pin 7) eliminates gate oscillation caused by PCB trace inductance in high-noise EV EMI environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB126N10N3 G | D²PAK-3L, no Kelvin source; RDS(on) = 4.1 mΩ; Qg = 98 nC | Lacks pin-7 Kelvin sensing; higher gate loop inductance sensitivity | Lower cost where gate drive stability is less critical and layout inductance is tightly controlled |
| STL220N10F7 | PowerFLAT 8x8 HV, RDS(on) = 3.6 mΩ; Qg = 110 nC; no Kelvin source | Smaller footprint but higher RthJC = 1.2 K/W; requires aggressive PCB copper | Better for space-constrained designs with active cooling; unsuitable for >80 A without forced air |
Compared with IPB126N10N3 G and STL220N10F7, IPI126N10N3GXKSA1 uniquely combines Kelvin source integrity, lowest RthJC, and industry-leading RDS(on) × Qg - making it optimal for high-reliability, high-power-density synchronous rectifiers where gate drive fidelity and thermal headroom are non-negotiable.
Availability
IPI126N10N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial SMPS requiring stable component supply across multi-year production cycles.
Supply support for IPI126N10N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating at TC = 100 °C?
The IPI126N10N3GXKSA1 is rated for 126 A continuous drain current when case temperature is maintained at ≤100 °C using a minimum 1 cm² 2-oz copper thermal pad per Infineon's recommended layout in Application Note AN2017-04. Derating applies above this temperature.
Does the Kelvin source (pin 7) require a separate PCB trace to the driver ground?
Yes - pin 7 must be routed directly to the gate driver's source reference node with minimal length and width, independent of the main source power return path. This prevents voltage drop across source inductance from distorting the effective VGS seen by the channel.
Is the device qualified to AEC-Q101 for automotive use?
No - IPI126N10N3GXKSA1 is not AEC-Q101 qualified. It is industrial-grade and intended for server, telecom, and industrial power applications. For automotive-grade equivalents, consider Infineon's AEC-Q101-qualified OptiMOS™ 5 series (e.g., IPB120N10N5).
Can this MOSFET replace older OptiMOS™ 2 devices like IPP120N10N3 in existing designs?
Yes - it is a direct drop-in replacement in terms of pinout, voltage rating, and thermal footprint. However, its lower RDS(on) and Qg may require gate resistor re-tuning to manage dv/dt and prevent overshoot; refer to Infineon's "OptiMOS™ 3 Migration Guide" for layout and drive recommendations.
IPI126N10N3GXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 3
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 12.6mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI126N10N3GXKSA1 FAQ
1.How can I place an order for IPI126N10N3GXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI126N10N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI126N10N3GXKSA1 reliable?
The price and inventory of IPI126N10N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI126N10N3GXKSA1 is usually 5 days.
3.What payment methods are accepted for IPI126N10N3GXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI126N10N3GXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI126N10N3GXKSA1?
IPI126N10N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI126N10N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI126N10N3GXKSA1?
For technical support, including IPI126N10N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI126N10N3GXKSA1 requirements.
6.How does Aetrix verify that IPI126N10N3GXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI126N10N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI126N10N3GXKSA1 meets industry standards.
7.What is the process for return or replacement of IPI126N10N3GXKSA1?
All IPI126N10N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI126N10N3GXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI126N10N3GXKSA1 part is unused and in its original packaging.
Return procedure for IPI126N10N3GXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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