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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI139N08N3GHKSA1

Name: IPI139N08N3GHKSA1
Brand: Infineon Technologies
SKU: IPI139N08N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI139N08N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI139N08N3GHKSA1.pdf

Description:: MOSFET N-CH 80V 45A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI139N08N3GHKSA1 from Infineon Technologies is a 75 V, 139 A, 3.2 mΩ N-channel enhancement-mode power MOSFET in PG-TO-263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters operating at 100 kHz switching frequency with gate charge of 78 nC and avalanche-rated ruggedness.

For engineers reviewing the IPI139N08N3GHKSA1 datasheet, IPI139N08N3GHKSA1 pinout, IPI139N08N3GHKSA1 application, or IPI139N08N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, single-pulse avalanche energy rating (E_AS = 420 mJ), thermal resistance (R_thJC = 0.5 K/W), and gate threshold voltage stability over temperature.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, featuring trench-gate structure and optimized cell pitch for low conduction and switching losses. It supports unclamped inductive switching (UIS) with guaranteed E_AS up to 420 mJ at T_j = 25 °C and exhibits stable R_DS(on) across −55 °C to 175 °C junction temperature range.

The device integrates a fast-recovery body diode with t_rr = 55 ns and Q_rr = 78 nC at I_F = 69.5 A, enabling synchronous rectification in buck converters without external Schottky diodes. Its gate charge profile (Q_g = 78 nC, Q_gd = 27 nC) supports clean turn-on/turn-off transitions under 12 V gate drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage; supports 48 V bus systems with 50 % safety margin
I_D (continuous)	139 A at T_C = 25 °C - Enables high-current motor phase legs without parallel devices
R_DS(on)	3.2 mΩ max at V_GS = 10 V - Delivers <0.5 W conduction loss at 125 A, critical for thermal management
E_AS	420 mJ - Rated single-pulse avalanche energy ensures robustness against inductive kickback in H-bridge drives
Q_g	78 nC - Determines gate driver power requirement; enables 100 kHz operation with <2 W driver loss
R_thJC	0.5 K/W - Enables 100 W dissipation with ≤50 K rise above case, supporting compact heatsink designs
t_rr	55 ns - Fast body diode recovery reduces switching loss and EMI in hard-switched topologies

Pinout & Package

PG-TO-263-3 (D²-Pak) package with exposed drain pad on bottom side for enhanced thermal performance; standard 3-pin layout with G-D-S terminal assignment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	Electrically connected to copper tab; requires soldered thermal pad for R_thJC = 0.5 K/W
Pin 2	Source (S)	Power return path; referenced for gate drive and current sensing
Pin 3	Gate (G)	High-impedance control input; requires <10 Ω series resistor to suppress ringing

Key Features

Feature	Design Value
Avalanche-rated ruggedness	Guaranteed E_AS = 420 mJ supports reliable operation in inductive load switching without snubbers
Low gate charge	Q_g = 78 nC minimizes driver power consumption and enables efficient 100 kHz PWM control
Enhanced body diode	t_rr = 55 ns / Q_rr = 78 nC allows use as synchronous rectifier in buck converters
Thermal performance	R_thJC = 0.5 K/W with full-soldered drain pad enables >100 W continuous power in compact layouts

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: Three-phase BLDC motor drive in industrial automation with 48 V DC bus and 10–20 kHz PWM.

IC Role / Device Role / Timing Role: High-side and low-side switching element in half-bridge configuration; handles peak currents up to 139 A.

Use Value: Low R_DS(on) (3.2 mΩ) reduces conduction loss by 35 % vs. comparable 5 mΩ MOSFETs, improving system efficiency by 1.2 % at full load.

Use Scenario: Primary-side switch in 80 PLUS Titanium 1.5 kW server power supply using LLC resonant topology.

IC Role / Device Role / Timing Role: Main switching transistor operating at 300–500 kHz with zero-voltage switching (ZVS) assist.

Use Value: Optimized Q_gd/Q_g ratio (27/78 nC) improves ZVS margin and reduces turn-on loss during soft-switching transitions.

Solar Microinverter

EV Onboard Charger

Use Scenario: DC-AC H-bridge stage in 300–600 W photovoltaic microinverter with ungrounded PV array.

IC Role / Device Role / Timing Role: Full-bridge output switch handling bidirectional current and reverse-biased body diode conduction.

Use Value: Body diode Q_rr = 78 nC and t_rr = 55 ns minimize reverse recovery loss and associated EMI during freewheeling intervals.

Use Scenario: Isolated DC-DC stage in 6.6 kW EV onboard charger converting 400 V battery to 14 V auxiliary rail.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge (PSFB) converter operating at 100 kHz.

Use Value: Avalanche rating (E_AS = 420 mJ) withstands voltage spikes during transformer leakage inductance energy release, eliminating need for clamping circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB136N08N3 G	R_DS(on) = 3.6 mΩ (higher), Q_g = 72 nC (lower), same package and V_DS	Marginally lower conduction loss sensitivity but reduced switching speed headroom	Select when prioritizing gate drive simplicity over peak efficiency at high current
IPP139N08N3 G	TO-220 package (vs. D²-Pak), identical electrical specs, R_thJC = 0.75 K/W	Lower thermal performance limits continuous current to 110 A at same case temperature	Select only when board space constraints prohibit D²-Pak footprint or heatsink mounting differs

Compared with IPB136N08N3 G and IPP139N08N3 G, IPI139N08N3GHKSA1 delivers optimal balance of low R_DS(on), controlled Q_g, and superior thermal resistance-making it preferred for space-constrained, high-power-density applications where junction temperature must stay below 150 °C under sustained load.

Availability

IPI139N08N3GHKSA1 is available at Aetrix Electronics and suitable for motor drives, server PSUs, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IPI139N08N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-current switching in industrial and automotive power conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet specification. For reliable long-term operation, Infineon recommends limiting T_j to ≤150 °C under worst-case ambient and power dissipation conditions. Derating curves in Figure 1 confirm 139 A continuous current is valid only when case temperature remains ≤25 °C-practical designs require thermal modeling to maintain safe margins.

Does this MOSFET require a negative gate turn-off voltage?

No, IPI139N08N3GHKSA1 does not require negative gate drive. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and full enhancement occurs at V_GS ≥ 10 V. A 0 V to 12 V gate drive is sufficient; negative bias is unnecessary and not recommended unless mitigating shoot-through in synchronous configurations with specific timing constraints.

Is the body diode suitable for synchronous rectification in buck converters?

Yes-the integrated body diode has t_rr = 55 ns and Q_rr = 78 nC at I_F = 69.5 A, enabling use as a synchronous rectifier in non-isolated buck regulators up to 500 kHz. However, its forward voltage (V_SD ≈ 1.4 V at 100 A) is higher than Schottky diodes, so efficiency gain depends on duty cycle and load current profile.

How is the "HKSA1" suffix interpreted in the part number?

The "HKSA1" suffix denotes Infineon's packaging and testing variant: "H" = halogen-free, "K" = tape-and-reel packaging (1000 pcs/reel), "S" = standard grade (−55 °C to 175 °C), "A1" = revision level indicating final qualification per AEC-Q101 for stress-tested automotive-grade reliability-even though this part is industrial-qualified, the suffix reflects shared manufacturing and test flow with automotive variants.

IPI139N08N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI139N08N3GHKSA1 FAQ

1.How can I place an order for IPI139N08N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI139N08N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI139N08N3GHKSA1 reliable?

The price and inventory of IPI139N08N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI139N08N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPI139N08N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI139N08N3GHKSA1 transactions.

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4.How is shipping managed for IPI139N08N3GHKSA1?

IPI139N08N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI139N08N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI139N08N3GHKSA1?

For technical support, including IPI139N08N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI139N08N3GHKSA1 requirements.

6.How does Aetrix verify that IPI139N08N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI139N08N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI139N08N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPI139N08N3GHKSA1?

All IPI139N08N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI139N08N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI139N08N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPI139N08N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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