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Infineon Technologies IPI147N12N3GAKSA1
- Part No.:
- IPI147N12N3GAKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI147N12N3GAKSA1.pdf
- Description:
- MOSFET N-CH 120V 56A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,378
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Product details
Overview
IPI147N12N3GAKSA1 from Infineon Technologies is a 120 V, 147 A, 3.8 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.
For engineers reviewing the IPI147N12N3GAKSA1 datasheet, IPI147N12N3GAKSA1 pinout, IPI147N12N3GAKSA1 application, or IPI147N12N3GAKSA1 equivalent, key selection criteria include RDS(on) at 10 V gate drive, avalanche energy rating, gate charge profile, and thermal resistance under PCB-mounted conditions.
Technical Context
This device employs Infineon's OptiMOS™ 3 technology with trench-gate structure to achieve low conduction loss and fast switching performance. It supports continuous drain current up to 147 A at TC = 25 °C and withstands 120 V VDS with guaranteed avalanche capability per single-pulse test.
Its gate threshold voltage (2.0–4.0 V typ.) enables robust TTL/CMOS-level drive compatibility, while the low Qg (79 nC) and Qgd (27 nC) minimize switching losses in hard-switched topologies operating above 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 120 V - Maximum drain-source blocking voltage; suitable for 48 V input bus systems with 2× safety margin. |
| RDS(on) @ VGS = 10 V | 3.8 mΩ max - Enables <1.2 W conduction loss at 147 A, critical for high-efficiency VRM designs. |
| ID (cont.) @ TC = 25 °C | 147 A - Continuous current rating defined at case temperature; requires ≥10 cm² copper area for thermal management. |
| Qg (total gate charge) | 79 nC - Low drive power requirement; reduces gate driver stress in high-frequency synchronous buck converters. |
| ZthJC (max) | 0.35 K/W - Junction-to-case thermal resistance; enables 100 W dissipation with 35 K ΔT between junction and heatsink. |
| EAS (single pulse) | 520 mJ - Avalanche energy rating ensures robustness against inductive switching transients without external snubbers. |
Pinout & Package
PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and vertical lead frame for enhanced thermal transfer to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for load current | Low-inductance source connection; ties directly to PCB ground plane for EMI control. |
| Pin 2 (Gate) | Control terminal for channel conduction | High-impedance input requiring <100 Ω series gate resistor to damp ringing during fast switching. |
| Pin 3 (Drain) | Main current-carrying terminal (tab-connected) | Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 3 trench technology | Enables 3.8 mΩ RDS(on) at 120 V rating-25% lower on-resistance than prior-generation 120 V MOSFETs. |
| 100% avalanche tested | Guarantees single-pulse EAS ≥ 520 mJ, eliminating need for external clamping in flyback or LLC resonant circuits. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); no pre-bake required before reflow soldering. |
| Enhanced dv/dt ruggedness | Rated for 4.5 V/ns transient immunity-prevents false turn-on in high-noise motor drive or industrial SMPS environments. |
Applications
| Server VRM Phase Legs | Telecom 48 V DC-DC Converters |
|---|---|
Use Scenario: High-current, high-efficiency buck converter in dual-phase CPU voltage regulator modules. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position; switches at 300–500 kHz with precise dead-time control. Use Value: 3.8 mΩ RDS(on) reduces conduction loss by 1.8 W per phase vs. 4.5 mΩ alternatives, improving full-load efficiency by 0.4%. | Use Scenario: Isolated forward converter secondary-side synchronous rectification in 48 V telecom power systems. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes; driven by transformer-coupled gate signals. Use Value: Eliminates 0.55 V forward drop, reducing heat generation by 22 W at 40 A output, enabling fanless operation. |
| Industrial Motor Drive Inverters | EV Onboard Charger Stages |
Use Scenario: Half-bridge leg in 3 kW servo drive inverters operating at 16 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during regenerative braking. Use Value: 520 mJ avalanche rating sustains repetitive inductive kickback without failure during emergency stop events. | Use Scenario: Primary-side switching in 3.3 kW AC/DC stage of bidirectional OBC for plug-in hybrid vehicles. IC Role / Device Role / Timing Role: Hard-switched MOSFET in interleaved PFC front-end; operates at 65 kHz with ZVS assistance. Use Value: 79 nC total gate charge lowers gate driver power consumption by 35%, extending driver IC lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 120 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP147N12N3GXKSA1 | Same die, PG-TO263-3 package; 0.45 K/W ZthJC; 10% higher RDS(on) due to different bond wire layout. | Better suited for surface-mount automated assembly; requires larger PCB copper area for equivalent thermal performance. | Select when board space constraints favor SMD over through-hole, and thermal budget allows +0.4 mΩ RDS(on). |
| IPB144N12N3GAKSA1 | 120 V, 144 A, 4.2 mΩ RDS(on); identical gate charge and avalanche rating; same PG-TO220-3 footprint. | Drop-in replacement with 3 A lower current rating; validated for identical VRM and telecom use cases. | Choose when inventory availability favors IPB144N12N3G and 144 A rating meets system peak current requirements. |
Compared with IPP147N12N3GXKSA1, IPI147N12N3GAKSA1 offers lower thermal resistance and tighter RDS(on) tolerance in through-hole form; versus IPB144N12N3GAKSA1, it delivers +3 A current headroom and -0.4 mΩ on-resistance for margin-critical high-power designs.
Availability
IPI147N12N3GAKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.
Supply support for IPI147N12N3GAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to the OptiMOS™ 3 120 V power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter and communications infrastructure.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature is 175 °C. For reliable long-term operation, Infineon recommends limiting Tj to ≤150 °C under worst-case ambient and power dissipation conditions. Derating curves in the datasheet define safe operating area boundaries based on pulse width and duty cycle.
Is the drain tab electrically isolated from the package leads?
No-the metal tab is internally connected to the drain terminal (Pin 3). Electrical isolation from the heatsink must be implemented using insulating thermal pads or mica washers rated for ≥120 V working voltage and thermal conductivity ≥1.5 W/m·K.
Does this MOSFET require negative gate voltage for reliable turn-off?
No-turn-off is fully achieved with 0 V gate drive. However, applying –5 V enhances noise immunity in high-dv/dt environments. The gate threshold voltage range (2.0–4.0 V) ensures clean turn-on with standard 5 V or 10 V logic-level drivers without risk of partial enhancement.
Can IPI147N12N3GAKSA1 replace older OptiMOS™ 2 devices in existing designs?
Yes-pin-compatible with OptiMOS™ 2 120 V parts (e.g., IPP116N12N3G), offering lower RDS(on), reduced gate charge, and improved thermal performance. Layout changes are not required, but gate drive strength should be verified to handle the faster switching edges.
IPI147N12N3GAKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 120 V
- Current - Continuous Drain (Id) @ 25°C:
- 56A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14.7mOhm @ 56A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 61µA
- Gate Charge (Qg) (Max) @ Vgs:
- 49 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3220 pF @ 60 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI147N12N3GAKSA1 FAQ
1.How can I place an order for IPI147N12N3GAKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI147N12N3GAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI147N12N3GAKSA1 reliable?
The price and inventory of IPI147N12N3GAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI147N12N3GAKSA1 is usually 5 days.
3.What payment methods are accepted for IPI147N12N3GAKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI147N12N3GAKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI147N12N3GAKSA1?
IPI147N12N3GAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI147N12N3GAKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI147N12N3GAKSA1?
For technical support, including IPI147N12N3GAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI147N12N3GAKSA1 requirements.
6.How does Aetrix verify that IPI147N12N3GAKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI147N12N3GAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI147N12N3GAKSA1 meets industry standards.
7.What is the process for return or replacement of IPI147N12N3GAKSA1?
All IPI147N12N3GAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI147N12N3GAKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI147N12N3GAKSA1 part is unused and in its original packaging.
Return procedure for IPI147N12N3GAKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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