Infineon Technologies IPI200N15N3 G

Overview

IPI200N15N3 G from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It features a 150 V drain-source breakdown voltage, 20 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 50 A, 175 °C maximum junction temperature, and PG-TO263-3 surface-mount package.

For engineers reviewing the IPI200N15N3 G datasheet, IPI200N15N3 G pinout, IPI200N15N3 G application, or IPI200N15N3 G equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), robust avalanche energy rating (170 mJ), and validated performance in high-efficiency 48 V industrial power supplies.

Technical Context

This OptiMOS™3 device employs trench-gate superjunction technology to achieve high cell density and low conduction losses while maintaining fast switching dynamics. Its gate threshold voltage (2–4 V) enables reliable turn-on with standard 5 V or 10 V gate drivers, and its reverse diode exhibits 106 ns typical reverse recovery time and 332 nC Q_rr at T_j = 25 °C.

The MOSFET supports continuous drain current up to 50 A at T_C = 25 °C and 40 A at T_C = 100 °C, with thermal resistance R_thJC of 1 K/W enabling efficient heat transfer to external heatsinks. Its 6 kV/µs dv/dt ruggedness ensures stable operation under fast transient conditions in hard-switched topologies.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated drain tab, RoHS-compliant lead plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB200N15N3 G and IPP200N15N3 G, the IPI200N15N3 G offers identical silicon performance in a surface-mount D²PAK package optimized for automated assembly and high-power density, whereas IPB200N15N3 G shares the same mechanical form factor and IPP200N15N3 G trades thermal efficiency for through-hole manufacturability.

Availability

IPI200N15N3 G is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for IPI200N15N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The OptiMOS™3 product line delivers high-performance discrete power MOSFETs targeting high-efficiency, high-frequency switching applications in computing, communications, and industrial power conversion.

FAQ

What is the maximum continuous drain current for IPI200N15N3 G at 100 °C case temperature?

The maximum continuous drain current is 40 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes adequate PCB copper area (6 cm²) and vertical mounting in still air, with thermal resistance R_thJC = 1 K/W limiting junction temperature to 175 °C under steady-state conditions.

Does IPI200N15N3 G have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic body diode rated for 50 A continuous forward current and 220 A pulsed current. Key parameters include V_SD = 1.0–1.2 V at I_F = 50 A and T_j = 25 °C, t_rr = 106 ns, and Q_rr = 332 nC - all measured at V_R = 75 V, di/dt = 100 A/µs, and T_j = 25 °C.

Can IPI200N15N3 G be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage range is 2–4 V, but reliable enhancement-mode turn-on requires V_GS ≥ 8 V to achieve R_DS(on) ≤ 20 mΩ. A 3.3 V GPIO cannot fully enhance the channel; a dedicated gate driver (e.g., 1EDN7512B) or level shifter is required for robust switching performance.

What is the recommended PCB layout for thermal management of IPI200N15N3 G?

Use a minimum 6 cm² copper pour (single layer, 70 µm thick) connected to the exposed drain tab on a 40 mm × 40 mm × 1.5 mm FR4 board, mounted vertically in still air. Thermal vias under the tab and connection to internal ground planes improve heat spreading; avoid solder mask over the drain pad to maximize thermal contact with heatsinks.