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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI25N06S3-25

Name: IPI25N06S3-25
Brand: Infineon Technologies
SKU: IPI25N06S3-25
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI25N06S3-25

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI25N06S3-25.pdf

Description:: MOSFET N-CH 55V 25A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:9,049

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Product details

Overview

IPI25N06S3-25 from Infineon Technologies is a 55 V, 25 A N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, qualified to AEC-Q101 for automotive use, with R_DS(on) max of 24.8 mΩ at V_GS = 10 V and 175 °C maximum junction temperature. It delivers high pulsed current capability (50 A), 100% avalanche tested performance (120 mJ), and integrated body diode with 15 ns reverse recovery time - deployed in automotive DC-DC converters and motor control H-bridge legs.

For engineers reviewing the IPI25N06S3-25 datasheet, IPI25N06S3-25 pinout, IPI25N06S3-25 application, or IPI25N06S3-25 equivalent, key selection criteria include its 3.3 K/W junction-to-case thermal resistance, gate plateau voltage of 7.0 V, Q_g of 27–41 nC, and SMD-compatible thermal footprint on 6 cm² PCB copper area.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction architecture optimized for low conduction and switching losses in 12 V automotive systems. Its 21.3–24.8 mΩ R_DS(on) range (SMD version) enables efficient operation at high current density, while the 270 pF Crss and 14 nC Q_gs support fast, controllable turn-on/turn-off transitions under 14.8 Ω gate resistance.

The integrated body diode exhibits V_SD = 0.6–1.3 V at 25 A and T_j = 25 °C, with t_rr = 15 ns and Q_rr = 15 nC - critical for synchronous rectification and freewheeling in half-bridge topologies where reverse recovery behavior directly impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 12 V automotive battery systems with 100 % margin over nominal 42 V load-dump transients
R_DS(on) max	24.8 mΩ at V_GS = 10 V, T_j = 25 °C - enables ≤0.62 W conduction loss at 25 A continuous drain current
I_D continuous	25 A at T_C = 25 °C - rated for sustained operation in thermally constrained engine-bay modules
E_AS	120 mJ single-pulse avalanche energy - ensures robustness against inductive switching faults without external snubbers
Q_g	27–41 nC total gate charge - determines required gate driver peak current and switching speed trade-offs
t_r/t_f	27 ns rise/fall time - enables <100 kHz PWM operation with minimal switching loss in motor drive inverters
R_thJC	3.3 K/W - allows direct heatsink mounting for thermal management in space-constrained automotive ECUs

Pinout & Package

PG-TO262-3-1 is a through-hole, 3-pin, isolated-drain package with standard TO-220 footprint compatibility but improved thermal performance via exposed drain tab. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 0–10 V logic-level signal; requires ≥14.8 Ω series resistance to damp ringing during 27 ns edge transitions
Pin 2 (Drain)	High-side power path	Exposed metal tab electrically connected to drain; must be insulated from heatsink unless floating topology used
Pin 3 (Source)	Reference node	Serves as return path for 25 A load current and gate drive loop; layout must minimize inductance to suppress V_GS overshoot

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood applications including engine control, EPS, and HVAC actuators
100 % avalanche tested	Each unit subjected to single-pulse stress up to 120 mJ - eliminates field failure risk from inductive kickback
MSL1 rating (260 °C)	Compatible with lead-free reflow soldering processes without popcorn cracking or delamination
175 °C operating temperature	Enables placement near heat sources (e.g., power inductors) without derating in compact ECU designs
Green (RoHS-compliant)	Meets EU Directive 2011/65/EU with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE

Applications

Automotive Engine Control Unit (ECU)

Electric Power Steering (EPS) Motor Driver

Use Scenario: Switching 12 V battery power to solenoid valves and fuel injectors in closed-loop combustion timing control.

IC Role / Device Role / Timing Role: High-side load switch with precise 25 A current handling and 15 ns diode t_rr to manage inductive flyback.

Use Value: Eliminates need for external freewheeling diodes and reduces PCB area by 35 % versus discrete diode + MOSFET solutions.

Use Scenario: Half-bridge leg in 3-phase BLDC motor inverter driving 250 W assist motor.

IC Role / Device Role / Timing Role: Low-side switching element with 24.8 mΩ R_DS(on) enabling ≤0.62 W conduction loss at full torque.

Use Value: Supports 20 kHz PWM without thermal throttling, maintaining >96 % inverter efficiency across -40 to 150 °C ambient.

Automotive HVAC Blower Control

12 V DC-DC Converter Primary Switch

Use Scenario: PWM-controlled fan speed regulation using variable duty-cycle drive to 200 W brushed DC motor.

IC Role / Device Role / Timing Role: Unidirectional power switch with integrated body diode conducting reverse current during PWM off-time.

Use Value: Reduces system BOM count by one discrete diode and improves reliability with matched diode parameters (V_SD, Q_rr)

Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V buck converter powering infotainment microcontrollers.

IC Role / Device Role / Timing Role: Fast-switching transistor with 27 ns t_r/t_f and 27–41 nC Q_g enabling high-frequency operation.

Use Value: Enables 500 kHz switching frequency, shrinking magnetics volume by 40 % versus 100 kHz alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP25N06S3-25	Same die, PG-TO220-3-1 package; R_thJA = 62 K/W (vs. 40 K/W for IPI25N06S3-25 on 6 cm² PCB)	Lower thermal performance in high-power-density layouts; suitable for lower-current or forced-air-cooled designs	Select when mechanical compatibility with legacy TO-220 footprints is required and thermal headroom exceeds 15 °C
IPB25N06S3-25	Same die, PG-TO263-3-2 surface-mount package; identical R_DS(on) and Q_g, but requires reflow-compatible PCB design	Enables automated assembly and higher board-level reliability in vibration-prone automotive modules	Select for new SMT-based ECU platforms where board space and long-term mechanical stability are prioritized

Compared with IPP25N06S3-25 and IPB25N06S3-25, the IPI25N06S3-25 offers optimal balance of through-hole manufacturability, thermal performance (40 K/W on 6 cm² copper), and mechanical robustness - making it preferred for mid-volume engine control modules requiring field-replaceable serviceability and high thermal cycling endurance.

Availability

IPI25N06S3-25 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and HVAC blower motor drives requiring stable component supply across extended product lifecycles.

Supply support for IPI25N06S3-25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The OptiMOS®-T2 product line delivers high-current, low-R_DS(on) power MOSFETs engineered specifically for 12 V automotive subsystems demanding AEC-Q101 compliance, high-temperature operation, and robust avalanche capability.

FAQ

What is the maximum gate-source voltage rating for IPI25N06S3-25?

The absolute maximum gate-source voltage is ±20 V, with qualification testing performed at -5 V and +20 V per datasheet Rev. 1.1. Operation beyond ±20 V risks permanent gate oxide damage. For reliable 10 V drive, a 12 V rail with transient suppression is recommended to accommodate overshoot during fast switching.

Does IPI25N06S3-25 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control dV/dt and prevent oscillation. With Q_g = 27–41 nC and typical gate driver rise time targets, a 14.8 Ω resistor is specified in the datasheet for 27.5 V V_DD and 25 A I_D conditions to achieve 27 ns t_r while damping parasitic ringing.

How does the body diode performance compare to discrete Schottky diodes in freewheeling applications?

The integrated body diode has V_SD = 0.6–1.3 V at 25 A and t_rr = 15 ns, offering lower forward drop than standard silicon diodes but higher than Schottky alternatives. Its matched Q_rr = 15 nC and soft recovery reduce EMI versus fast-recovery diodes, making it preferable in cost-sensitive, space-constrained automotive inverters where discrete diode addition is prohibitive.

Is IPI25N06S3-25 suitable for synchronous rectification in DC-DC converters?

Yes - its low R_DS(on) (24.8 mΩ max), fast t_r/t_f (27 ns), and controlled body diode characteristics enable efficient synchronous rectification in 12 V input buck converters. However, external gate drive timing must precisely coordinate with high-side switch dead time to avoid shoot-through, given its 7.0 V gate plateau voltage.

IPI25N06S3-25 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1862 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI25N06S3-25 FAQ

1.How can I place an order for IPI25N06S3-25 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI25N06S3-25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI25N06S3-25 reliable?

The price and inventory of IPI25N06S3-25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI25N06S3-25 is usually 5 days.

3.What payment methods are accepted for IPI25N06S3-25?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI25N06S3-25 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI25N06S3-25?

IPI25N06S3-25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI25N06S3-25 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI25N06S3-25?

For technical support, including IPI25N06S3-25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI25N06S3-25 requirements.

6.How does Aetrix verify that IPI25N06S3-25 is sourced from the original manufacturer or authorized distributors?

All IPI25N06S3-25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI25N06S3-25 meets industry standards.

7.What is the process for return or replacement of IPI25N06S3-25?

All IPI25N06S3-25 units undergo pre-shipment inspection (PSI). If there is an issue with IPI25N06S3-25, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI25N06S3-25 part is unused and in its original packaging.

Return procedure for IPI25N06S3-25:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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