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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI25N06S3L-22

Name: IPI25N06S3L-22
Brand: Infineon Technologies
SKU: IPI25N06S3L-22
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI25N06S3L-22

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI25N06S3L-22.pdf

Description:: MOSFET N-CH 55V 25A TO262-3

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Product details

Overview

IPI25N06S3L-22 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for automotive and industrial switching applications, featuring 55 V V_DS, 25 A continuous drain current at T_C = 25 °C, 21.3 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 17 A, AEC-Q101 qualification, and 175 °C maximum junction temperature. It is used in DC-DC converters, motor control inverters, and high-efficiency power supplies where robust avalanche capability and low conduction loss are required.

For engineers reviewing the IPI25N06S3L-22 datasheet, IPI25N06S3L-22 pinout, IPI25N06S3L-22 application, or IPI25N06S3L-22 equivalent, key selection criteria include its PG-TO262-3-1 package thermal resistance (R_thJC = 3.3 K/W), 100% avalanche-tested ruggedness (E_AS = 120 mJ), gate charge profile (Q_g = 31–47 nC), and diode forward voltage (V_SD = 0.6–1.3 V at I_F = 25 A).

Technical Context

This OptiMOS™-T2 device employs a trench-gate superjunction structure to achieve low R_DS(on) × Q_g figure-of-merit while maintaining fast switching (t_r = 26 ns, t_f = 43 ns) and low output capacitance (C_oss = 283 pF). Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) enables reliable turn-on with standard 5 V logic-level drivers.

The integrated body diode supports synchronous rectification and freewheeling operation, with t_rr = 15 ns and Q_rr = 15 nC under specified conditions. Thermal design is supported by MSL1 reflow compatibility (peak 260 °C) and validated junction-to-case thermal resistance of 3.3 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before breakdown; suitable for 48 V automotive and industrial bus systems.
R_DS(on) max	21.3 mΩ at V_GS = 10 V, I_D = 17 A - Enables <1.3 W conduction loss at 25 A, reducing heatsink requirements.
I_D cont	25 A at T_C = 25 °C - Sustained current rating defined by bondwire limit; derates to 25 A at T_C = 100 °C.
E_AS	120 mJ single-pulse avalanche energy - Confirmed ruggedness for inductive load switching without external snubbers.
Q_g	31–47 nC total gate charge - Determines driver strength requirement; enables efficient 100 kHz+ PWM operation with moderate gate resistance.
V_GS(th)	1.2–2.2 V - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIO; avoids partial turn-on during slow-rising drive.
t_r/t_f	26 ns / 43 ns - Fast edge rates reduce switching losses in hard-switched topologies like buck and half-bridge.

Pinout & Package

Supplied in PG-TO262-3-1 package (standard through-hole variant of TO-262), featuring isolated drain tab for direct PCB heatsinking and mechanical robustness in high-vibration environments. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to 31–47 nC Q_g.
Pin 2 (Drain)	High-side power terminal	Connected to power rail or inductive load; electrically isolated metal tab enables direct thermal coupling to heatsink.
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive reference; must be routed with low inductance to minimize ringing.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 120 mJ, ensuring field reliability in inductive switching failure modes.
Green product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU and IPC-1752A material declarations.
175 °C operating temperature	Junction temperature rating allows operation in engine control units, traction inverters, and sealed industrial enclosures without derating.
MSL1 reflow compatible	Withstands peak solder reflow temperatures up to 260 °C, enabling standard lead-free assembly without moisture sensitivity concerns.

Applications

Automotive Engine Control Unit (ECU)

Industrial DC-DC Converter

Use Scenario: High-side switch for fuel injector or solenoid driver in 12 V/48 V hybrid vehicle ECUs.

IC Role / Device Role / Timing Role: Power switch controlling pulsed current delivery with precise on/off timing and fast fall time (43 ns) to minimize dwell-time error.

Use Value: Low R_DS(on) reduces I²R heating during extended duty cycles; avalanche rating eliminates need for external clamping diodes.

Use Scenario: Primary-side synchronous rectifier in isolated 400 V input to 12 V output flyback converter for factory automation PLCs.

IC Role / Device Role / Timing Role: Low-side switching element in active clamp or LLC resonant topology, requiring tight gate charge control and low C_oss for ZVS.

Use Value: 283 pF C_oss and 270 pF Crss enable high-frequency soft-switching; 3.3 K/W R_thJC supports >92% efficiency at 25 A load.

Motor Drive Inverter Stage

On-Board Charger (OBC) Power Switch

Use Scenario: Half-bridge leg in 3-phase BLDC inverter for HVAC blower or power steering assist.

IC Role / Device Role / Timing Role: High-speed switching transistor with integrated body diode for freewheeling; reverse recovery time (t_rr = 15 ns) minimizes commutation loss.

Use Value: 15 nC Q_rr and 0.6–1.3 V V_SD reduce dead-time losses and improve thermal margin over discrete diode solutions.

Use Scenario: AC-DC PFC boost switch in bidirectional OBC for EVs operating at 65 kHz switching frequency.

IC Role / Device Role / Timing Role: Main power switch handling 25 A RMS current with low conduction and switching loss trade-off.

Use Value: 21.3 mΩ R_DS(on) and 47 nC Q_g yield optimal FOM for 65 kHz operation; AEC-Q101 ensures long-term reliability in cyclic thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP25N06S3L-22	Same die, PG-TO220-3-1 package; higher R_thJA (62 K/W) vs. 40 K/W for IPI25N06S3L-22 on 6 cm² PCB.	Better suited for lower-power, cost-sensitive designs with simpler heatsinking; less effective in space-constrained layouts.	Select when board-level thermal management is limited and mechanical mounting flexibility is prioritized over thermal performance.
IPB25N06S3L-22	Same die, PG-TO263-3-2 surface-mount package; identical R_DS(on) and E_AS, but requires reflow-compatible layout.	Enables automated assembly and higher board density; unsuitable for high-vibration or mechanically stressed environments.	Select for volume production with SMT lines and where PCB real estate is constrained, provided vibration testing confirms mechanical integrity.

Compared with IPP25N06S3L-22 and IPB25N06S3L-22, the IPI25N06S3L-22 offers superior thermal performance in through-hole applications via its PG-TO262-3-1 package-delivering 40 K/W R_thJA on 6 cm² copper-while retaining identical electrical specs and AEC-Q101 compliance, making it optimal for thermally demanding yet mechanically robust automotive modules.

Availability

IPI25N06S3L-22 is available at Aetrix Electronics and suitable for automotive engine control units, industrial DC-DC converters, and motor drive inverter stages requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for IPI25N06S3L-22 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOS™-T2 family-designed specifically for high-efficiency, high-reliability power conversion in automotive and industrial applications where low R_DS(on), fast switching, and rugged avalanche performance are critical.

FAQ

What is the maximum allowable gate-source voltage for IPI25N06S3L-22?

The absolute maximum gate-source voltage is ±16 V, qualified at –5 V and +16 V per datasheet Rev. 1.1. Exceeding this range risks permanent gate oxide damage. For reliable operation, gate drive should be clamped within –5 V to +15 V, with typical logic-level drive at 0 V (off) and 10 V (fully enhanced).

Does IPI25N06S3L-22 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. Based on Q_g = 31–47 nC and target t_on/t_off ≤ 100 ns, a 10 Ω to 22 Ω resistor is recommended when driven by a 2 A peak gate driver. Lower values increase switching speed but risk ringing; higher values reduce EMI at the cost of increased switching loss.

Can IPI25N06S3L-22 replace older OptiMOS™-T1 devices in existing designs?

Yes-pin-compatible with earlier OptiMOS™-T1 variants in PG-TO262-3-1, offering improved R_DS(on) (21.3 mΩ vs. ~25 mΩ), lower Q_g, and tighter V_GS(th) distribution. No layout change is needed, but gate drive timing and thermal margins should be re-verified due to faster switching and higher peak currents.

Is the body diode in IPI25N06S3L-22 suitable for synchronous rectification?

Yes-the integrated body diode has V_SD = 0.6–1.3 V at 25 A and t_rr = 15 ns, enabling use in synchronous rectification where low forward drop and fast recovery reduce conduction and switching losses. However, for highest efficiency, an external Schottky diode may still be preferred in ultra-low-voltage outputs (<5 V).

IPI25N06S3L-22 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 21.6mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI25N06S3L-22 FAQ

1.How can I place an order for IPI25N06S3L-22 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI25N06S3L-22 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI25N06S3L-22 reliable?

The price and inventory of IPI25N06S3L-22 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI25N06S3L-22 is usually 5 days.

3.What payment methods are accepted for IPI25N06S3L-22?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI25N06S3L-22 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI25N06S3L-22?

IPI25N06S3L-22 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI25N06S3L-22 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI25N06S3L-22?

For technical support, including IPI25N06S3L-22 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI25N06S3L-22 requirements.

6.How does Aetrix verify that IPI25N06S3L-22 is sourced from the original manufacturer or authorized distributors?

All IPI25N06S3L-22 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI25N06S3L-22 meets industry standards.

7.What is the process for return or replacement of IPI25N06S3L-22?

All IPI25N06S3L-22 units undergo pre-shipment inspection (PSI). If there is an issue with IPI25N06S3L-22, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI25N06S3L-22 part is unused and in its original packaging.

Return procedure for IPI25N06S3L-22:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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