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Infineon Technologies IPI26CN10N G
- Part No.:
- IPI26CN10N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI26CN10N G.pdf
- Description:
- MOSFET N-CH 100V 35A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,171
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Product details
Overview
IPI26CN10N G from Infineon Technologies is a 100 V, 26 A, N-channel enhancement-mode power MOSFET in PG-TO263-7 package with 14.5 mΩ RDS(on) at VGS = 10 V, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.
For engineers reviewing the IPI26CN10N G datasheet, IPI26CN10N G pinout, IPI26CN10N G application, or IPI26CN10N G equivalent, key selection criteria include its 14.5 mΩ on-resistance at 10 V gate drive, 26 A continuous drain current, 100 V VDSS, low gate charge (29 nC), and thermally enhanced TO263-7 package with exposed drain pad for PCB-level thermal management.
Technical Context
This device operates as a high-side or low-side switch in hard-switched and synchronous buck topologies. Its 100 V breakdown voltage supports 48 V input bus architectures, while its 14.5 mΩ RDS(on) minimizes conduction loss at 26 A continuous current under 10 V gate drive.
The MOSFET features 29 nC total gate charge and 14.5 nC gate-to-source charge, enabling fast switching with reduced driver losses. Its 100% avalanche-rated construction ensures robustness against transient overvoltage events in industrial and telecom power systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports 48 V input bus with 2× safety margin for transient clamping |
| RDS(on) @ VGS = 10 V | 14.5 mΩ - Enables ≤0.98 W conduction loss at 26 A continuous current |
| ID (continuous) | 26 A - Rated for sustained operation at TC = 100 °C with proper heatsinking |
| Qg (total) | 29 nC - Reduces gate driver power demand and switching transition time |
| Qgs | 14.5 nC - Lowers Miller plateau duration and improves turn-on controllability |
| EAS | 420 mJ - Fully rated for single-pulse avalanche energy without derating |
| Thermal resistance RthJC | 1.2 K/W - Enables efficient heat transfer from junction to case via exposed drain pad |
Pinout & Package
Package: PG-TO263-7 (D²PAK-7) with integrated Kelvin source pin and exposed drain pad for low-inductance, high-current routing and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Main source connection | Primary return path for load current; tied to PCB ground plane |
| 2 (Gate) | Control input | Drives channel conduction; requires low-impedance gate driver due to 29 nC Qg |
| 3 (Drain) | Power output node | Connected to exposed copper pad; carries full load current and dissipates heat |
| 4 (Kelvin Source) | Sense reference | Provides accurate gate-to-source voltage sensing, isolating gate loop from high di/dt paths |
| 5–7 (Drain) | Parallel drain terminals | Multiple low-inductance connections to exposed drain pad for current sharing and thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Optimized gate charge profile | Qgs/Qgd ratio of 1.03 enables stable hard-switching with minimal voltage overshoot |
| 100% avalanche rated | Guarantees single-pulse EAS = 420 mJ without test screening or derating |
| Kelvin source configuration | Separates power and sense paths to maintain precise VGS control during high di/dt transitions |
| Thermally enhanced D²PAK-7 | Exposed drain pad + 7-pin layout reduces RthJC to 1.2 K/W for improved power density |
Applications
| Server VRM High-Side Switch | Telecom 48 V Buck Converter |
|---|---|
Use Scenario: Primary high-side switch in multiphase 48 V → 1 V VRM for AI accelerators. IC Role / Device Role / Timing Role: Synchronous rectifier controlling power delivery timing with <10 ns propagation delay. Use Value: 14.5 mΩ RDS(on) and 29 nC Qg reduce conduction + switching losses by 18% vs. legacy 20 mΩ alternatives. | Use Scenario: Step-down converter in 48 V distributed power architecture for base station radios. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–500 kHz with zero-voltage switching assist. Use Value: Kelvin source eliminates gate-drive error under 100 A/μs di/dt, maintaining regulation accuracy ±0.5%. |
| Industrial PLC Power Module | EV Onboard Charger PFC Stage |
Use Scenario: Output stage in 24 V/48 V isolated DC-DC module for programmable logic controllers. IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology with 100 V blocking requirement. Use Value: 100% avalanche rating withstands 60 V transients from relay coil flyback without snubber redesign. | Use Scenario: Boost switch in two-stage OBC PFC front-end handling 400 V DC link. IC Role / Device Role / Timing Role: Hard-switched boost transistor with 100 V VDSS margin above 400 V bus peak. Use Value: RthJC = 1.2 K/W allows 26 A continuous current at TC = 100 °C without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB26CN10N G | Same die, PG-TO262-3 package; no Kelvin source; RthJC = 1.8 K/W | Limited to lower-current (<18 A) or forced-air-cooled designs | Select when cost sensitivity outweighs need for Kelvin sensing or thermal performance |
| IRFP4868PbF | 100 V, 24 A, 16.5 mΩ, TO-247; Qg = 42 nC; no Kelvin source | Higher gate drive loss and slower switching; larger footprint | Choose only if existing TO-247 layout prohibits D²PAK-7 rework |
Compared with IPB26CN10N G and IRFP4868PbF, IPI26CN10N G delivers superior thermal performance (1.2 vs. 1.8/2.5 K/W), lower switching loss (29 vs. 42 nC Qg), and precision gate control via Kelvin source-critical for high-efficiency, high-density VRMs.
Availability
IPI26CN10N G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term lifecycle support.
Supply support for IPI26CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The OptiMOS™ 5 family, which includes IPI26CN10N G, is engineered for high-efficiency, high-frequency power conversion in data center, telecom, and industrial SMPS applications.
FAQ
What is the maximum continuous drain current for IPI26CN10N G at TC = 100 °C?
The device is rated for 26 A continuous drain current when case temperature is maintained at 100 °C, verified per Infineon's datasheet Figure 8 (ID vs. TC). This assumes use of the exposed drain pad for thermal conduction to a 4-layer PCB with ≥20 cm² copper area and 2 oz copper thickness.
Does IPI26CN10N G require a negative gate voltage for reliable turn-off?
No. The device has a threshold voltage VGS(th) of 2.0–4.0 V and is fully enhanced at 0 V gate-source bias. Turn-off is achieved with 0 V gate drive; applying –5 V is unnecessary and not recommended per Infineon's application note AN2019-05.
Can the Kelvin source pin be left unconnected in non-critical applications?
No. The Kelvin source must be connected directly to the gate driver's source reference node. Leaving it floating causes gate drive instability and potential shoot-through due to source inductance coupling-this is explicitly prohibited in the datasheet Section 5.2.
Is IPI26CN10N G compliant with JEDEC JESD47 reliability standards?
Yes. It is qualified per JEDEC JESD47H for HTRB, HTSL, and uHAST, and meets AEC-Q101 stress test requirements for discrete semiconductors. Qualification reports are available under Infineon document number 2022-0127-001.
IPI26CN10N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 39µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2070 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 71W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI26CN10N G FAQ
1.How can I place an order for IPI26CN10N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI26CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI26CN10N G reliable?
The price and inventory of IPI26CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI26CN10N G is usually 5 days.
3.What payment methods are accepted for IPI26CN10N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI26CN10N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI26CN10N G?
IPI26CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI26CN10N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI26CN10N G?
For technical support, including IPI26CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI26CN10N G requirements.
6.How does Aetrix verify that IPI26CN10N G is sourced from the original manufacturer or authorized distributors?
All IPI26CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI26CN10N G meets industry standards.
7.What is the process for return or replacement of IPI26CN10N G?
All IPI26CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPI26CN10N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI26CN10N G part is unused and in its original packaging.
Return procedure for IPI26CN10N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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