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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI45P03P4L11AKSA1

Name: IPI45P03P4L11AKSA1
Brand: Infineon Technologies
SKU: IPI45P03P4L11AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI45P03P4L11AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI45P03P4L11AKSA1.pdf

Description:: MOSFET P-CH 30V 45A TO262-3

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Product details

Overview

IPI45P03P4L11AKSA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET designed for reverse battery protection in automotive and industrial power systems. It delivers -45 A continuous drain current at T_C = 25 °C with V_GS = -10 V, exhibits R_DS(on) of 10.8 mΩ (SMD version), and operates up to 175 °C junction temperature. Its AEC qualification and 100% avalanche testing confirm suitability for harsh-environment vehicle electronics.

For engineers reviewing the IPI45P03P4L11AKSA1 datasheet, IPI45P03P4L11AKSA1 pinout, IPI45P03P4L11AKSA1 application, or IPI45P03P4L11AKSA1 equivalent, key selection criteria include its -30 V V_DS, low gate threshold (-1.0 to -2.0 V), 100% avalanche-tested ruggedness, thermal resistance (R_thJC = 2.6 K/W), and PG-TO262-3-1 package compatibility with high-current PCB layouts.

Technical Context

This device implements a trench-based OptiMOS®-P2 silicon structure optimized for low R_DS(on) and fast switching in high-side load switch configurations. Its logic-level gate drive enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

The integrated body diode supports reverse recovery times under 35 ns and Q_rr of 26 nC, enabling efficient operation in bidirectional current paths such as battery backup circuits and OR-ing applications where low forward voltage drop (-1.0 to -1.3 V at -45 A) is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with margin against load dump transients.
R_DS(on) @ V_GS = -10 V	9.0–11.1 mΩ - Enables <1 W conduction loss at -45 A, reducing heatsink requirements in compact modules.
I_D (continuous)	-45 A @ T_C = 25 °C - Supports high-current reverse polarity protection for engine control units and ADAS ECUs.
V_GS(th)	-1.0 to -2.0 V - Ensures full enhancement with standard logic-level outputs, eliminating external gate drivers.
E_AS	110 mJ - Confirmed single-pulse avalanche energy rating ensures robustness during inductive load switching events.
T_j max	+175 °C - Allows operation in under-hood environments without derating in sealed enclosures.
Q_g	42–55 nC - Defines total gate charge required for turn-on; enables predictable switching loss calculation in PWM-controlled protection circuits.

Pinout & Package

Package: PG-TO262-3-1 (3-pin, straight lead, through-hole variant of TO-262). Thermal pad on drain (Pin 2) requires soldered PCB copper area for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Connected to battery positive in reverse-battery protection; defines reference for gate drive and current sensing.
Pin 2 (Drain)	Drain terminal	Connected to load side; thermally coupled to PCB copper pour for junction-to-case thermal path (R_thJC = 2.6 K/W).
Pin 3 (Gate)	Control input	Receives logic-level negative voltage to turn on; requires <55 nC charge for full enhancement; sensitive to ESD (±100 nA leakage max).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including temperature cycling, HTRB, and humidity testing.
100% avalanche tested	Each unit subjected to single-pulse avalanche stress at I_AS = -45 A, ensuring field reliability in inductive fault conditions.
Logic-level gate drive	V_GS(th) ≤ -2.0 V guarantees full conduction with 3.3 V MCU GPIOs, simplifying system-level gate driver design.
Green Product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU and JESD204B material declarations.
MSL1 reflow rating	Rated for peak reflow temperatures up to 260 °C, supporting standard lead-free SMT assembly processes despite being a through-hole part.

Applications

Automotive Body Control Module (BCM)

Industrial PLC Power Input Stage

Use Scenario: Reverse battery connection protection during service or jump-start events in BCM power distribution.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active polarity guard; turned on only when battery polarity is correct.

Use Value: Prevents catastrophic damage to downstream CAN transceivers, microcontrollers, and sensor interfaces by blocking reverse current before fuse activation.

Use Scenario: Input stage protection for 24 V DC-powered programmable logic controllers in factory automation cabinets.

IC Role / Device Role / Timing Role: Standalone reverse polarity switch placed upstream of DC-DC converters and I/O power rails.

Use Value: Eliminates need for series diodes, reducing voltage drop (<0.1 V vs. >0.7 V) and improving efficiency in always-on auxiliary supplies.

ADAS Camera Power Supply

Electric Power Steering (EPS) ECU

Use Scenario: Protection of 12 V camera modules mounted externally on vehicle exteriors exposed to accidental reverse hook-up.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-MOSFET in hot-swap configuration with fast turn-off response to polarity faults.

Use Value: Maintains uninterrupted video stream during transient faults due to <35 ns diode reverse recovery and minimal V_SD forward drop.

Use Scenario: Reverse battery safeguard in high-reliability EPS electronic control units where failure could impair steering assist.

IC Role / Device Role / Timing Role: Primary protection element rated for 175 °C operation and validated for 100% avalanche energy handling.

Use Value: Meets ISO 26262 ASIL-B functional safety requirements for fault-tolerant power path design without additional monitoring circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse battery protection applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB45P03P4L11AKSA1	PG-TO263-3-2 SMD package; R_DS(on) typ. 8.7 mΩ @ -45 A; lower R_thJA (40 K/W with 6 cm² copper)	Better thermal performance in space-constrained SMT designs; requires reflow-compatible layout	Select for automated assembly and higher power density; verify PCB copper area meets 6 cm² requirement.
IPP45P03P4L11AKSA1	PG-TO220-3-1 through-hole package; R_DS(on) typ. 9.0 mΩ @ -45 A; R_thJC = 2.6 K/W identical	Compatible with legacy through-hole manufacturing; easier manual prototyping and thermal inspection	Select for cost-sensitive industrial controls or where hand-soldering or mechanical mounting is preferred.

Compared with IPB45P03P4L11AKSA1 and IPP45P03P4L11AKSA1, IPI45P03P4L11AKSA1 offers identical electrical specs and AEC qualification but uses PG-TO262-3-1 packaging-providing intermediate thermal performance and compatibility with both wave-solder and selective-reflow processes in hybrid assembly lines.

Availability

IPI45P03P4L11AKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC input stages, ADAS camera power supplies, and electric power steering ECUs requiring stable component supply across extended product lifecycles.

Supply support for IPI45P03P4L11AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This device belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability reverse battery protection and high-side switching in automotive and industrial 12 V/24 V systems.

FAQ

What is the maximum allowable gate-source voltage for IPI45P03P4L11AKSA1?

The absolute maximum gate-source voltage is -16 V. Operation beyond this rating risks permanent gate oxide damage. Recommended operating range is -10 V for full enhancement and -4.5 V for logic-level drive; gate drive circuits must include clamping or limiting to prevent overshoot during switching transients.

Does IPI45P03P4L11AKSA1 require a gate resistor, and if so, what value is recommended?

A gate resistor is required to control dV/dt and suppress ringing. For typical 24 V automotive applications with MCU-driven gates, a 10 Ω to 47 Ω series resistor is recommended. Lower values (≤10 Ω) improve switching speed but increase EMI risk; higher values (>47 Ω) reduce EMI but extend turn-on time and conduction losses.

Can IPI45P03P4L11AKSA1 be used in parallel configurations for higher current handling?

Yes, but only with careful attention to gate drive matching and thermal symmetry. The device's positive R_DS(on) temperature coefficient enables current sharing, but layout-induced inductance imbalance or thermal gradient must be minimized. Use individual gate resistors and symmetric PCB copper pours to ensure balanced current distribution across paralleled units.

Is the body diode in IPI45P03P4L11AKSA1 suitable for freewheeling in inductive loads?

The integrated body diode has a forward voltage of -1.0 to -1.3 V at -45 A and t_rr of 35 ns, making it usable for low-frequency freewheeling. However, for high-frequency or high-dI/dt inductive loads, an external Schottky diode is recommended to reduce switching losses and avoid diode-induced voltage spikes during turn-off.

IPI45P03P4L11AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.1mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: +5V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI45P03P4L11AKSA1 FAQ

1.How can I place an order for IPI45P03P4L11AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI45P03P4L11AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI45P03P4L11AKSA1 reliable?

The price and inventory of IPI45P03P4L11AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI45P03P4L11AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI45P03P4L11AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI45P03P4L11AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI45P03P4L11AKSA1?

IPI45P03P4L11AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI45P03P4L11AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI45P03P4L11AKSA1?

For technical support, including IPI45P03P4L11AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI45P03P4L11AKSA1 requirements.

6.How does Aetrix verify that IPI45P03P4L11AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI45P03P4L11AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI45P03P4L11AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI45P03P4L11AKSA1?

All IPI45P03P4L11AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI45P03P4L11AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI45P03P4L11AKSA1 part is unused and in its original packaging.

Return procedure for IPI45P03P4L11AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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