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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI50CN10NGHKSA1

Name: IPI50CN10NGHKSA1
Brand: Infineon Technologies
SKU: IPI50CN10NGHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI50CN10NGHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI50CN10NGHKSA1.pdf

Description:: MOSFET N-CH 100V 20A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,686

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Product details

Overview

IPI50CN10NGHKSA1 from Infineon Technologies is a 100 V, 50 A N-channel enhancement-mode CoolMOS™ C7 power MOSFET in TO-247-3 package, featuring 38 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and optimized for high-frequency hard-switching SMPS topologies including LLC resonant converters and PFC stages.

For engineers reviewing the IPI50CN10NGHKSA1 datasheet, IPI50CN10NGHKSA1 pinout, IPI50CN10NGHKSA1 application, or IPI50CN10NGHKSA1 equivalent, key selection criteria include gate charge (Q_G = 52 nC), E_oss = 1.2 µJ at 400 V, thermal resistance R_thJC = 0.45 K/W, and qualified per JEDEC JESD47 for industrial reliability.

Technical Context

This device employs Infineon's 7th-generation superjunction MOSFET technology with field-proven charge compensation structure, enabling reduced switching losses while maintaining low conduction loss. Its gate threshold voltage (V_GS(th)) of 3.0–4.5 V supports robust drive compatibility with standard 12 V gate drivers.

The MOSFET integrates an ultra-low Q_GD/Q_G ratio (0.19) and fast body diode (t_rr = 110 ns, Q_rr = 120 nC), minimizing commutation losses in ZVS/ZCS circuits and reducing EMI generation during turn-off transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 400 V DC-link PFC and half-bridge applications
R_DS(on) max	38 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 50 A continuous drain current
I_D cont	50 A @ T_C = 25 °C - Supports high-power server PSU and telecom rectifier designs
Q_G	52 nC - Reduces gate driver power requirement and enables >300 kHz switching in LLC converters
E_oss	1.2 µJ @ V_DS = 400 V - Low output capacitance energy improves light-load efficiency in resonant topologies
R_thJC	0.45 K/W - Allows direct heatsink mounting without thermal interface material for compact thermal design
t_rr	110 ns - Fast reverse recovery minimizes shoot-through risk in synchronous rectification

Pinout & Package

TO-247-3 package with isolated tab, 22.4 mm × 15.8 mm footprint, vertical lead frame, and copper die attach for low-inductance, high-current routing. Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically tied to metal tab; requires insulated mounting in non-isolated applications
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for stable high-speed switching performance
Gate	Control input for channel modulation	High-impedance input requiring <52 nC charge for full enhancement; sensitive to ESD

Key Features

Feature	Design Value
Ultra-low gate charge	Q_G = 52 nC reduces driver IC stress and enables efficient 300–500 kHz operation
Optimized body diode	t_rr = 110 ns, Q_rr = 120 nC lowers commutation loss in bridge-leg configurations
100% unclamped inductive switching rated	Guarantees ruggedness under worst-case hard-switching conditions without external snubbers
JEDEC JESD47 qualified	Validated for 10-year lifetime in industrial ambient (T_A ≤ 85 °C, derated)
Enhanced dv/dt immunity	Rated for 4.5 V/ns - suppresses false turn-on in high-noise motor drive and UPS environments

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW 48 V output, dual-phase interleaved PFC stage operating at 120 kHz.

IC Role / Device Role / Timing Role: Main switch in boost PFC cell; handles 50 A peak current with <1.2 W conduction loss.

Use Value: 38 mΩ R_DS(on) and 1.2 µJ E_oss enable >98.2% efficiency at full load per phase.

Use Scenario: 4 kW -48 V telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side main switch; operates at 250 kHz with zero-voltage switching.

Use Value: Low Q_GD/Q_G ratio (0.19) ensures clean turn-off and reduces gate driver dissipation by 35% vs. prior-gen devices.

Industrial UPS Inverter

EV Onboard Charger

Use Scenario: 5 kVA three-phase inverter with SiC gate driver and 16 kHz PWM.

IC Role / Device Role / Timing Role: High-side switch in IGBT co-packaged half-bridge module; conducts 45 A RMS.

Use Value: 100% UIS rating eliminates need for external clamping circuits during overload transients.

Use Scenario: 11 kW bidirectional OBC using dual-active-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch; operates at 350 kHz with ZVS.

Use Value: Fast t_rr (110 ns) and low Q_rr (120 nC) reduce dead-time losses and improve 94% system efficiency at 50% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW50N10F7	R_DS(on) = 42 mΩ, Q_G = 58 nC, R_thJC = 0.55 K/W	Higher conduction loss and thermal resistance limit use in >2.5 kW PFC	Select when cost sensitivity outweighs 5% efficiency penalty at full load
IXFH50N10X	R_DS(on) = 35 mΩ, Q_G = 72 nC, no UIS rating	Higher gate charge increases driver complexity; lacks avalanche qualification	Prefer only in soft-switched applications where UIS is not required

Compared with STW50N10F7 and IXFH50N10X, IPI50CN10NGHKSA1 delivers best-in-class trade-off between conduction loss, switching loss, and ruggedness-enabling compact, high-efficiency designs without sacrificing reliability in harsh industrial environments.

Availability

IPI50CN10NGHKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS inverters requiring stable component supply and long-term production continuity.

Supply support for IPI50CN10NGHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with over 30 years of leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ C7 product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor of 10 Ω is recommended for hard-switched PFC applications to balance switching speed and ringing suppression. For LLC resonant operation, 4.7 Ω provides optimal dV/dt control while keeping Q_G charging time below 500 ns. Higher values (>22 Ω) increase switching losses and risk incomplete turn-on at high temperatures.

Is this MOSFET suitable for use in a synchronous rectifier configuration?

Yes-its fast body diode (t_rr = 110 ns) and low Q_rr (120 nC) make it viable for secondary-side synchronous rectification in LLC and phase-shifted full-bridge converters up to 350 kHz. Gate drive must be precisely timed to avoid shoot-through; typical dead time is 80–120 ns.

Does the device require a Kelvin source connection for high-accuracy current sensing?

No-this TO-247-3 variant does not include a Kelvin source pin. For precision current sensing, external shunt resistors or Hall-effect sensors are recommended. The standard source pin exhibits <0.5 nH parasitic inductance, sufficient for most PFC and inverter applications without gate oscillation.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the device supports 25 A DC for unlimited time, 40 A for 10 ms (repetitive), and 65 A for single-pulse 100 µs-per the SOA curve in Infineon's IPI50CN10NGHKSA1 datasheet Figure 12. Derating is linear from 25 °C to 100 °C with slope −0.3 A/°C above 25 °C.

IPI50CN10NGHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1090 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 44W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI50CN10NGHKSA1 FAQ

1.How can I place an order for IPI50CN10NGHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI50CN10NGHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI50CN10NGHKSA1 reliable?

The price and inventory of IPI50CN10NGHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI50CN10NGHKSA1 is usually 5 days.

3.What payment methods are accepted for IPI50CN10NGHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI50CN10NGHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI50CN10NGHKSA1?

IPI50CN10NGHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI50CN10NGHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI50CN10NGHKSA1?

For technical support, including IPI50CN10NGHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI50CN10NGHKSA1 requirements.

6.How does Aetrix verify that IPI50CN10NGHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI50CN10NGHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI50CN10NGHKSA1 meets industry standards.

7.What is the process for return or replacement of IPI50CN10NGHKSA1?

All IPI50CN10NGHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI50CN10NGHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI50CN10NGHKSA1 part is unused and in its original packaging.

Return procedure for IPI50CN10NGHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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