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Infineon Technologies IPI50N10S3L16AKSA1

Part No.:
IPI50N10S3L16AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI50N10S3L16AKSA1.pdf
Description:
MOSFET N-CH 100V 50A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,719

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Product details

Overview

IPI50N10S3L16AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 100 V VDS, 50 A continuous drain current at TC = 25 °C, and 12.8–15.4 mΩ RDS(on) at VGS = 10 V. It delivers robust avalanche performance (330 mJ single-pulse EAS) and operates up to 175 °C junction temperature-used in automotive DC-DC converters, motor control inverters, and high-reliability industrial power switches.

For engineers reviewing the IPI50N10S3L16AKSA1 datasheet, IPI50N10S3L16AKSA1 pinout, IPI50N10S3L16AKSA1 application, or IPI50N10S3L16AKSA1 equivalent, key selection criteria include its 100 V breakdown voltage, low gate charge (49–64 nC), 1.5 K/W RthJC, integrated body diode with 80 ns trr, and AEC-Q101 qualification for automotive powertrain systems.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched topologies. Its gate threshold voltage (1.2–2.4 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while the 3.7 V gate plateau voltage supports stable Miller region control during commutation.

The MOSFET integrates a fast, soft-recovery body diode (trr = 80 ns, Qrr = 185 nC) and is fully characterized for unclamped inductive switching (UIS) up to 330 mJ at Tj = 25 °C. Thermal resistance of 1.5 K/W (junction-to-case) ensures efficient heat transfer to heatsinks in TO-262 mounting configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Withstands 80 V DC bus transients in 48 V automotive systems without clamping.
RDS(on) max15.4 mΩ @ VGS = 10 V - Enables ≤7.7 W conduction loss at 50 A, critical for thermal management in compact converters.
Qg49–64 nC - Determines gate driver power requirement; compatible with common 1–2 A peak gate drivers.
EAS330 mJ - Supports robust operation under inductive load switching faults without failure.
trr80 ns - Limits reverse recovery loss and EMI in synchronous rectification and half-bridge topologies.
Tj max+175 °C - Allows operation in engine bay environments without derating in high-ambient applications.
ID cont50 A @ TC = 25 °C - Sustains full-rated current with adequate heatsinking in industrial motor drives.

Pinout & Package

Package: PG-TO262-3-1 (leadless variant of TO-262), surface-mount compatible with through-hole footprint, isolated drain tab for direct heatsink mounting.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output terminalElectrically connected to metal tab; requires insulated mounting or direct thermal interface to heatsink.
SourceReference node for gate drive and current returnLow-inductance connection point for source loop; critical for minimizing switching oscillation.
GateControl electrode for channel formationHigh-impedance input requiring low-ESR gate resistor (typically 3.5 Ω) to damp ringing.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain use including engine control units and EPS modules.
100% UIS testedEach unit screened for unclamped inductive switching reliability-no latent field failures.
MSL1 ratingSuitable for lead-free reflow up to 260 °C peak without popcorn or delamination risk.
Low Crss (63–95 pF)Reduces Miller-induced shoot-through risk in high-frequency half-bridge operation.
Soft-recovery body diodeMinimizes voltage overshoot and EMI during freewheeling in buck and LLC converters.

Applications

Automotive DC-DC ConvertersIndustrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–200 kHz.

Use Value: 15.4 mΩ RDS(on) and 80 ns trr reduce conduction and recovery losses by >18% vs. legacy MOSFETs.

Use Scenario: Inverter stage for 3 kW BLDC motor in factory automation.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase IGBT/MOSFET hybrid inverter.

Use Value: 175 °C Tj max and 330 mJ EAS ensure fault tolerance during short-circuit events.

Onboard Charger (OBC) PFC StageServer PSU Primary Switch

Use Scenario: Boost switch in 3.3 kW two-stage OBC with interleaved PFC.

IC Role / Device Role / Timing Role: Fast-switching active clamp MOSFET handling 100 kHz+ transitions.

Use Value: 64 nC Qg and 1.5 K/W RthJC enable high efficiency at 98.2% peak PFC efficiency.

Use Scenario: Primary-side switch in 1.5 kW resonant LLC server PSU.

IC Role / Device Role / Timing Role: High-voltage primary switch with zero-voltage switching capability.

Use Value: 100 V rating and low Coss (730–949 pF) support reliable ZVS across wide load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP50N10S3L-16Same die, PG-TO220-3-1 package; higher RthJA (62 K/W) and lower thermal mass.Better suited for prototyping and low-volume manual assembly; less optimal for high-power density designs.Select when board-level rework or socket-based testing is required.
IPB50N10S3L-16Same die, PG-TO263-3-2 package; enhanced thermal pad area and solderable drain tab.Superior thermal performance on PCBs with 6 cm² copper; preferred for automated SMT production.Select for volume production where thermal reliability and reflow compatibility are prioritized.

Compared with IPP50N10S3L-16 and IPB50N10S3L-16, the IPI50N10S3L16AKSA1 offers identical electrical specs but balances mechanical robustness and thermal interface flexibility via its PG-TO262-3-1 leadframe design-ideal for mid-volume automotive modules requiring both manual and automated assembly.

Availability

IPI50N10S3L16AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and onboard chargers requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPI50N10S3L16AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T product line-designed specifically for high-efficiency, high-reliability automotive and industrial power conversion where AEC-Q101 compliance and rugged UIS performance are mandatory.

FAQ

What is the maximum gate-source voltage rating for IPI50N10S3L16AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±16 V risks permanent oxide damage. For reliable switching, gate drive should be limited to 10 V for full RDS(on) optimization or 4.5 V for logic-level compatibility-both within safe operating area per datasheet Figure 8.

Does IPI50N10S3L16AKSA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 50 A continuous forward current rating, 0.6–1.2 V forward voltage at 50 A and 25 °C, 80 ns reverse recovery time, and 185 nC reverse recovery charge. These values are measured under standardized conditions (VR = 50 V, dI/dt = 100 A/µs) and support synchronous rectification in buck and flyback topologies.

Can IPI50N10S3L16AKSA1 be used in parallel configurations, and what layout considerations apply?

Yes, it supports paralleling due to positive temperature coefficient of RDS(on). Critical layout practices include matched gate trace lengths, Kelvin source connections, symmetrical thermal paths to heatsink, and individual gate resistors (3.5 Ω typical) to prevent dynamic current imbalance. PCB copper area must be ≥6 cm² per device for optimal RthJA.

Is IPI50N10S3L16AKSA1 compliant with RoHS and REACH regulations?

Yes, it is fully RoHS compliant (2011/65/EU) and REACH SVHC-free per Infineon's declaration dated June 2023. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE, and meets JEDEC MSL1 reflow requirements up to 260 °C peak temperature.

IPI50N10S3L16AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
15.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:
64 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4180 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI50N10S3L16AKSA1 FAQ

1.How can I place an order for IPI50N10S3L16AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI50N10S3L16AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI50N10S3L16AKSA1 reliable?

The price and inventory of IPI50N10S3L16AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI50N10S3L16AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI50N10S3L16AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI50N10S3L16AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI50N10S3L16AKSA1?

IPI50N10S3L16AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI50N10S3L16AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI50N10S3L16AKSA1?

For technical support, including IPI50N10S3L16AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI50N10S3L16AKSA1 requirements.

6.How does Aetrix verify that IPI50N10S3L16AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI50N10S3L16AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI50N10S3L16AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI50N10S3L16AKSA1?

All IPI50N10S3L16AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI50N10S3L16AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI50N10S3L16AKSA1 part is unused and in its original packaging.

Return procedure for IPI50N10S3L16AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI50N10S3L16AKSA1 Tags

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