Infineon Technologies IPI50R399CPXKSA1
- Part No.:
- IPI50R399CPXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI50R399CPXKSA1.pdf
- Description:
- MOSFET N-CH 500V 9A TO262-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IPI50R399CPXKSA1 from Infineon Technologies is a 500 V, 9.5 A (TC = 100 °C) superjunction N-channel MOSFET in TO-220FP package, featuring RDS(on) = 399 mΩ (typ.), Qg = 34 nC, and EAS = 540 mJ - optimized for hard-switched PFC and auxiliary power supplies in server SMPS.
For engineers reviewing the IPI50R399CPXKSA1 datasheet, IPI50R399CPXKSA1 pinout, IPI50R399CPXKSA1 application, or IPI50R399CPXKSA1 equivalent, key selection criteria include avalanche ruggedness (EAS), gate charge profile for ZVS/ZCS compatibility, thermal resistance (RthJC = 1.3 K/W), and body diode reverse recovery performance (trr = 450 ns, Qrr = 2.2 µC).
Technical Context
This CoolMOS™ CP device employs charge compensation technology to achieve low RDS(on) × Qg figure-of-merit (13.6 Ω·nC) while maintaining robust 500 V breakdown voltage and unclamped inductive switching capability. Its optimized gate structure reduces Miller capacitance (Crss/Ciss = 7.5 %) and enables stable operation at high dV/dt rates up to 50 V/ns.
The integrated fast-recovery body diode supports discontinuous conduction mode (DCM) PFC with trr = 450 ns and soft recovery (Qrr/Irr = 0.49 µC/A), minimizing switching losses and EMI in boost converters operating at 65–100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - withstands DC bus voltages up to 400 VAC input with 20 % margin for surge and ripple |
| RDS(on) | 399 mΩ (typ. @ VGS = 10 V, Tj = 25 °C) - enables <1.5 W conduction loss at 9.5 A continuous drain current |
| Qg | 34 nC - supports efficient gate driving with standard 1 A peak drivers and <100 ns turn-on delay |
| EAS | 540 mJ (Tj = 25 °C) - sustains single-pulse inductive energy without failure in PFC choke fault conditions |
| trr | 450 ns - limits diode reverse recovery loss and voltage overshoot in DCM boost stages |
| RthJC | 1.3 K/W - allows 9.5 A continuous operation at TC = 100 °C with ≤12.4 W power dissipation |
| Coss | 44 pF (at VDS = 25 V) - contributes to low capacitive turn-off loss and predictable zero-voltage switching behavior |
Pinout & Package
TO-220FP (Full-Pak) package with isolated drain tab, vertical power flow, and screw-mount compatible footprint (lead pitch: 2.54 mm, case height: 15.75 mm). Designed for PCB mounting with minimal heatsink interface resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to metal tab; requires insulating pad when mounted to grounded heatsink |
| Source | Power return reference / gate drive common | Low-inductance connection point for source routing and Kelvin sense in high-frequency designs |
| Gate | Control terminal for channel modulation | High-impedance input requiring <34 nC charge for full enhancement; sensitive to ESD (HBM Class 1C) |
Key Features
| Feature | Design Value |
|---|---|
| Optimized RDS(on) × Qg FoM | 13.6 Ω·nC - balances conduction and switching loss for 65–100 kHz PFC stages |
| Enhanced avalanche ruggedness | EAS = 540 mJ - eliminates need for external snubbers in clamp-free PFC designs |
| Fast, soft-recovery body diode | trr = 450 ns, Qrr = 2.2 µC - reduces diode-induced EMI and voltage spikes in DCM operation |
| Low Crss/Ciss ratio | 7.5 % - improves gate drive stability and reduces Miller-induced false turn-on risk |
Applications
| Server SMPS PFC Stage | Industrial Auxiliary Power Supply |
|---|---|
Use Scenario: Boost PFC converter in 1–3 kW telecom/server power supplies operating at 65–100 kHz with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) or transition mode (TM) PFC controller stage. Use Value: 399 mΩ RDS(on) and 34 nC Qg enable >96 % efficiency at full load while meeting EN 61000-3-2 harmonic limits. | Use Scenario: Flyback or forward converter supplying isolated 12 V/5 V rails for control logic and fans in PLCs and motor drives. IC Role / Device Role / Timing Role: Primary-side switch handling 20–50 kHz switching with burst-mode light-load operation. Use Value: 500 V rating ensures reliability across 300–400 VDC bus variations; 1.3 K/W RthJC supports compact heatsinking in space-constrained enclosures. |
| LED Driver Secondary Side | UPS Inverter Half-Bridge |
Use Scenario: Secondary-side synchronous rectification in constant-current LED drivers for high-bay lighting (300–400 VDC bus). IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diodes to reduce conduction loss in 100–200 kHz LLC resonant stages. Use Value: Fast body diode (trr = 450 ns) enables clean commutation during dead-time; 540 mJ EAS tolerates transient overcurrent during LED short-circuit events. | Use Scenario: High-side switch in half-bridge inverter stage of online UPS systems delivering 1–5 kVA output. IC Role / Device Role / Timing Role: Hard-switched power switch operating at 16–20 kHz with active clamping and overcurrent protection. Use Value: Robust 500 V VDS withstands DC bus transients up to 450 V; TO-220FP isolation allows direct heatsink mounting without additional insulation layers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | RDS(on) = 750 mΩ, Qg = 22 nC, EAS = 220 mJ, TO-220FP | Higher conduction loss, lower gate charge, reduced avalanche capability | Preferred where cost sensitivity outweighs efficiency targets and surge immunity is less critical |
| IPP50R399CP | Same die, TO-220 (non-FP) package, RthJC = 1.0 K/W, uninsulated drain tab | Requires insulated mounting hardware; higher thermal performance but no creepage advantage | Selected when maximum power density is required and mechanical isolation is managed externally |
Compared with STP5NK50ZFP, IPI50R399CPXKSA1 delivers 47 % lower RDS(on) and 2.5× higher EAS, enabling higher efficiency and fault tolerance in mission-critical PFC; versus IPP50R399CP, it trades 0.3 K/W higher junction-to-case thermal resistance for reinforced electrical isolation and simplified assembly.
Availability
IPI50R399CPXKSA1 is available at Aetrix Electronics and suitable for server SMPS PFC stages, industrial auxiliary power supplies, and UPS inverter half-bridges requiring stable component supply and long-term industrial lifecycle support.
Supply support for IPI50R399CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The CoolMOS™ CP product line targets high-efficiency, high-reliability AC-DC conversion in datacenter, industrial, and renewable energy systems, emphasizing ruggedness, low-loss switching, and ease of gate drive design.
FAQ
What is the maximum continuous drain current rating for IPI50R399CPXKSA1?
The maximum continuous drain current is 9.5 A at case temperature TC = 100 °C, derating linearly to 0 A at TC = 175 °C. This rating assumes proper heatsinking with RthJC = 1.3 K/W and accounts for both conduction loss and safe operating area (SOA) limits under DC conditions.
Does IPI50R399CPXKSA1 have an integrated body diode, and how is its performance characterized?
Yes, it features an integrated fast-recovery epitaxial body diode with trr = 450 ns (typ.), Qrr = 2.2 µC (typ.), and softness factor S = 0.49. These values are measured at IF = 9.5 A, di/dt = 100 A/µs, and Tj = 125 °C, enabling low-noise commutation in DCM PFC and flyback topologies.
Can IPI50R399CPXKSA1 be used in zero-voltage switching (ZVS) circuits?
Yes - its low Coss (44 pF at 25 V), low Crss/Ciss ratio (7.5 %), and controlled Qg profile (34 nC) support reliable ZVS operation in LLC resonant converters up to 300 kHz, provided gate drive strength and dead-time are tuned per the application's resonant tank parameters.
What is the recommended gate resistor value for hard-switched PFC applications?
A gate resistor of 10–15 Ω is recommended for 65–100 kHz hard-switched PFC, balancing turn-on speed (to minimize overlap loss) and dV/dt control (to limit EMI and prevent spurious turn-on). Layout-dependent parasitic inductance may require empirical tuning between 8–22 Ω based on oscilloscope validation of VGS ringing and VDS overshoot.
IPI50R399CPXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 399mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 890 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI50R399CPXKSA1 FAQ
1.How can I place an order for IPI50R399CPXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI50R399CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI50R399CPXKSA1 reliable?
The price and inventory of IPI50R399CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI50R399CPXKSA1 is usually 5 days.
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Once your IPI50R399CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI50R399CPXKSA1?
For technical support, including IPI50R399CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI50R399CPXKSA1 requirements.
6.How does Aetrix verify that IPI50R399CPXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI50R399CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI50R399CPXKSA1 meets industry standards.
7.What is the process for return or replacement of IPI50R399CPXKSA1?
All IPI50R399CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI50R399CPXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI50R399CPXKSA1 part is unused and in its original packaging.
Return procedure for IPI50R399CPXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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