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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI600N25N3GAKSA1

Name: IPI600N25N3GAKSA1
Brand: Infineon Technologies
SKU: IPI600N25N3GAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI600N25N3GAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI600N25N3GAKSA1.pdf

Description:: MOSFET N-CH 250V 25A TO262-3

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Product details

Overview

IPI600N25N3GAKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 250 V V_DS, 25 A continuous drain current at T_C = 25 °C, and 60 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the IPI600N25N3GAKSA1 datasheet, IPI600N25N3GAKSA1 pinout, IPI600N25N3GAKSA1 application, or IPI600N25N3GAKSA1 equivalent, key selection criteria include its 210 mJ single-pulse avalanche energy, 1.1 K/W R_thJC, gate charge profile (Q_g = 22–29 nC), reverse diode recovery (t_rr = 127 ns), and JEDEC-qualified reliability for industrial power stages.

Technical Context

This MOSFET employs a trench-based OptiMOSTM3 process enabling low gate charge × R_DS(on) figure-of-merit (FOM) and stable R_DS(on) over temperature (51–60 mΩ at 25–175 °C). Its 1770–2350 pF input capacitance and 112–149 pF output capacitance support fast switching with controlled dv/dt (10 kV/µs).

The integrated body diode exhibits 1.0–1.2 V forward voltage at 25 A and 25 °C, with 604 nC reverse recovery charge and 127 ns recovery time under standardized conditions (V_R = 100 V, I_F = 12 A, di_F/dt = 100 A/µs), making it suitable for hard-switched and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - maximum blocking voltage for 24/48 V bus and flyback primary-side applications
R_DS(on) max	60 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1.5 W conduction loss at 25 A
I_D cont	25 A at T_C = 25 °C - supports medium-power SMPS and motor control outputs
E_AS	210 mJ - robustness against inductive switching transients without snubbers
Q_g	22–29 nC - determines gate drive power and switching speed in 100–500 kHz designs
t_rr	127 ns - limits diode commutation losses in synchronous buck and LLC resonant converters
R_thJC	1.1 K/W - enables thermal design with standard TO-220 heatsinks for ≤136 W dissipation

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulated mounting for non-ground-referenced topologies
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for shunt-based current monitoring in half-bridge legs
Gate	Control terminal for channel modulation	High-impedance input requiring <29 nC charge; sensitive to ESD and ringing without proper RC damping

Key Features

Feature	Design Value
OptiMOSTM3 trench process	Delivers 25% lower R_DS(on) × Q_g FOM vs. prior-generation 250 V MOSFETs, reducing total switching + conduction loss
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating beyond datasheet curves
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for automotive and industrial end equipment lifetimes
Halogen-free construction	Complies with IEC61249-2-21, supporting environmentally regulated manufacturing and disposal
10 kV/µs dv/dt immunity	Prevents false turn-on during fast voltage transitions in bridge configurations without active Miller clamping

Applications

Server PSU Primary Switch

Industrial BLDC Inverter Half-Bridge

Use Scenario: High-efficiency 80 PLUS Titanium server power supplies operating at 300–500 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side switching device handling 25 A peak currents and 200 V DC bus with synchronous rectification on secondary side.

Use Value: 60 mΩ R_DS(on) and 22–29 nC Q_g reduce combined conduction and switching losses by ~18% versus legacy 250 V MOSFETs at 400 kHz.

Use Scenario: 3-phase 750 W brushless DC motor drive in factory automation, using 6-step commutation with 12–48 V supply.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, conducting 25 A continuous with 127 ns diode recovery during PWM dead-time.

Use Value: Integrated diode with 1.0–1.2 V V_SD and 604 nC Q_rr minimizes shoot-through risk and reduces external freewheeling diode count.

Solar Microinverter DC-DC Stage

EV Onboard Charger PFC Switch

Use Scenario: Isolated DC-DC stage in residential solar microinverters converting 40–60 V PV input to 400 V DC link.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in phase-shifted full-bridge configuration.

Use Value: 210 mJ E_AS withstands transformer leakage inductance spikes during ZVS transitions without failure.

Use Scenario: Boost PFC switch in 3.3 kW onboard charger for light EVs, operating at 65–100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Fast-switching main switch with gate plateau voltage of 4.3 V enabling clean turn-on under wide V_GS tolerance.

Use Value: 1.1 K/W R_thJC allows direct mounting to aluminum chassis, eliminating need for additional thermal interface material in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 250 V N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24N25	R_DS(on) = 75 mΩ (max), Q_g = 32 nC, R_thJC = 1.3 K/W	Higher conduction + switching loss; lower thermal efficiency in high-duty-cycle operation	Acceptable where cost sensitivity outweighs 8–12% efficiency penalty and board space permits larger heatsink
IRFP4668PBF	R_DS(on) = 55 mΩ (max), Q_g = 42 nC, t_rr = 140 ns	Lower R_DS(on) but higher Q_g and slower diode recovery increase gate drive loss and EMI risk	Preferred only when lowest on-resistance is prioritized over switching speed and diode performance

Compared with STP24N25 and IRFP4668PBF, IPI600N25N3GAKSA1 offers the best balance of low R_DS(on), moderate Q_g, fast diode recovery, and proven JEDEC qualification-making it optimal for thermally constrained, high-frequency industrial and renewable energy systems.

Availability

IPI600N25N3GAKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPI600N25N3GAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOSTM3 power transistor product line, designed specifically for high-efficiency, high-reliability switching in industrial SMPS, motor control, and renewable energy conversion systems.

FAQ

What is the maximum safe operating voltage for IPI600N25N3GAKSA1 in repetitive avalanche conditions?

The device is rated for 250 V V_BR(DSS) at T_j = 25 °C, de-rating linearly to ~220 V at 175 °C. Repetitive avalanche is not characterized in the datasheet; only single-pulse E_AS = 210 mJ is specified. For repetitive stress, derating to ≤150 V with strict SOA compliance and gate drive optimization is recommended.

Can IPI600N25N3GAKSA1 be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (51 mΩ at 25 °C → 60 mΩ at 175 °C) enables inherent current sharing. Parallel use requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain <10 °C ΔT between devices.

Does the integrated body diode support continuous bidirectional current in synchronous rectification?

The diode is rated for 25 A continuous forward current (I_S) and 100 A pulsed (I_S,pulse). Its 127 ns t_rr and 604 nC Q_rr are validated for synchronous rectification in buck, flyback, and LLC topologies up to 500 kHz, provided V_GS = 0 V during reverse recovery.

Is the PG-TO220-3 package electrically isolated between drain and mounting surface?

No-the metal tab is internally connected to the Drain terminal. Electrical isolation requires insulating hardware (e.g., silicone pad + shoulder washer) when mounted to grounded heatsinks. The package does not provide internal isolation like some TO-247 variants with isolated tabs.

IPI600N25N3GAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI600N25N3GAKSA1 FAQ

1.How can I place an order for IPI600N25N3GAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI600N25N3GAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI600N25N3GAKSA1 reliable?

The price and inventory of IPI600N25N3GAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI600N25N3GAKSA1 is usually 5 days.

3.What payment methods are accepted for IPI600N25N3GAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI600N25N3GAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI600N25N3GAKSA1?

IPI600N25N3GAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI600N25N3GAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI600N25N3GAKSA1?

For technical support, including IPI600N25N3GAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI600N25N3GAKSA1 requirements.

6.How does Aetrix verify that IPI600N25N3GAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI600N25N3GAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI600N25N3GAKSA1 meets industry standards.

7.What is the process for return or replacement of IPI600N25N3GAKSA1?

All IPI600N25N3GAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI600N25N3GAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI600N25N3GAKSA1 part is unused and in its original packaging.

Return procedure for IPI600N25N3GAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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