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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI65R099C6XKSA1

Name: IPI65R099C6XKSA1
Brand: Infineon Technologies
SKU: IPI65R099C6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI65R099C6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI65R099C6XKSA1.pdf

Description:: MOSFET N-CH 650V 38A TO262-3

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Product details

Overview

IPI65R099C6XKSA1 from Infineon Technologies is a 650 V, 38 A (T_C = 25°C), 0.099 Ω R_DS(on) superjunction MOSFET in D²PAK (PG-TO262) package, optimized for high-efficiency PFC and hard-switching SMPS in industrial power supplies and telecom rectifiers.

For engineers reviewing the IPI65R099C6XKSA1 datasheet, IPI65R099C6XKSA1 pinout, IPI65R099C6XKSA1 application, or IPI65R099C6XKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit (12.6 nC·Ω), E_oss at 400 V (10 µJ), diode dI/dt ruggedness (300 A/µs), and TO-262 thermal resistance (R_thJC = 0.45 °C/W).

Technical Context

This CoolMOS™ C6 device uses charge compensation superjunction architecture to achieve simultaneous low conduction loss (R_DS(on) = 0.099 Ω) and fast switching (Q_g = 127 nC, t_fall = 6 ns). Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) ensures robust noise immunity in high-noise industrial environments.

The integrated body diode delivers 300 A/µs commutation ruggedness and 615 ns reverse recovery time at 100 A/µs di/dt, enabling reliable operation in continuous-conduction-mode PFC and LLC resonant converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated blocking voltage for 400 V DC-link applications with ≥20% margin against transients
R_DS(on),max	0.099 Ω - Enables <1.5 W conduction loss at 38 A continuous drain current (T_C = 25°C)
Q_g,typ	127 nC - Low gate drive energy reduces controller IC loading and enables 100+ kHz operation
E_oss@400V	10 µJ - Minimizes turn-on switching loss in hard-switched topologies like boost PFC
I_D,pulse	115 A - Supports peak-current handling during startup, overload, and fault conditions
di/dt (body diode)	300 A/µs - Ensures reliable commutation in synchronous rectification and ZVS circuits
R_thJC	0.45 °C/W - Enables 278 W power dissipation with minimal junction-to-case temperature rise

Pinout & Package

Package: D²PAK (PG-TO262), surface-mount, single-ended heatsink mounting, lead-free plating, halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input (R_G = 1.7 Ω) requiring ≤10 V drive; immune to dv/dt-induced false turn-on (50 V/ns rated)
Pin 2 (Drain)	High-voltage power output	Connected to DC bus or transformer primary; electrically isolated from heatsink via insulated mounting pad
Pin 3 (Source)	Power return and reference node	Serves as gate drive reference and current sense point; must be low-inductance layout to avoid oscillation

Key Features

Feature	Design Value
Superjunction FOM (R_DS(on) × Q_g)	12.6 nC·Ω - Reduces total switching + conduction loss by >25% vs. previous-generation 650 V MOSFETs
Body diode commutation ruggedness	300 A/µs di/dt rating - Eliminates need for external diode in critical high-dI/dt transitions
Industrial-grade qualification	JEDEC J-STD-020 & JESD22 compliant - Validated for 150°C operation and 1000-cycle thermal cycling
Low E_oss	10 µJ @ 400 V - Enables >96% efficiency in 3.3 kW server PSU PFC stages

Applications

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active boost PFC front-end in 3.3 kW redundant AC/DC power supply for data center servers.

IC Role / Device Role / Timing Role: Main switch in continuous-conduction-mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 0.099 Ω R_DS(on) and 10 µJ E_oss reduce total losses by 4.2 W vs. legacy 650 V MOSFET, enabling fanless operation below 45°C ambient.

Use Scenario: Primary-side switch in 2.5 kW telecom rectifier with hold-up time >20 ms.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in phase-shifted full-bridge topology.

Use Value: 300 A/µs diode dI/dt and 115 A pulse rating ensure reliable zero-voltage switching under dynamic load steps up to 100 A/ms.

LCD TV Backlight Inverter

Solar Microinverter DC-DC Stage

Use Scenario: Resonant half-bridge driver for CCFL backlight in 65-inch LCD TV power board.

IC Role / Device Role / Timing Role: High-side switch in LLC resonant converter operating at 250–500 kHz.

Use Value: 6 ns fall time and 127 nC Q_g allow precise dead-time control and <1% output ripple at light loads.

Use Scenario: Isolated DC-DC stage in 300 W solar microinverter interfacing PV panel to 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward converter with 150 kHz switching frequency.

Use Value: 650 V rating and 845 mJ single-pulse avalanche energy withstand line surges up to 1.2 kV without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099C6	TO-247 package, R_thJC = 0.45 °C/W, same electrical specs	Better thermal performance in forced-air-cooled industrial enclosures	Select when mechanical mounting requires through-hole and heatsink contact area >12 cm²
IPP65R099C6	TO-220 package, R_thJC = 0.45 °C/W, identical die but different leadframe	Lower cost for space-constrained consumer power adapters	Select when PCB real estate is limited and thermal budget allows 278 W derating at T_C ≤ 85°C

Compared with IPW65R099C6 and IPP65R099C6, IPI65R099C6XKSA1 provides identical silicon performance in a surface-mount D²PAK package-offering automated assembly compatibility and 30% smaller footprint than TO-247 while retaining full thermal capability of the C6 die.

Availability

IPI65R099C6XKSA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and solar microinverter DC-DC stages requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPI65R099C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 product line was engineered specifically for high-efficiency, high-power-density AC/DC conversion in industrial and telecom infrastructure-emphasizing low R_DS(on)×Q_g, rugged body diodes, and extended temperature operation.

FAQ

What is the maximum continuous drain current for IPI65R099C6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 24.0 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating is thermally limited by junction temperature (T_J ≤ 150°C) and assumes proper PCB copper area and heatsinking per JEDEC JESD51-2 standards.

Does IPI65R099C6XKSA1 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +10 V gate drive and does not require negative turn-off bias. Its gate threshold voltage range (2.5–3.5 V) and 50 V/ns dv/dt immunity eliminate shoot-through risk in standard gate drivers without active pull-down circuitry.

Can IPI65R099C6XKSA1 replace older CoolMOS™ C3 or C5 devices in existing designs?

Yes-pin-compatible and electrically superior to C3/C5 equivalents. It offers lower R_DS(on) (−15%), reduced Q_g (−12%), and improved E_oss (−35%). Layout changes are unnecessary, but gate resistor values may be reduced by 20–30% to optimize switching speed.

What is the recommended PCB footprint and thermal pad design for D²PAK mounting?

Per Infineon's Package Outline document (Rev. 2.0, p.14), use a 12 mm × 12 mm exposed copper thermal pad with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground plane. Minimum solder mask opening matches pad size; no solder mask dams on thermal pad edges.

IPI65R099C6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 12.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs:: 127 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2780 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI65R099C6XKSA1 FAQ

1.How can I place an order for IPI65R099C6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI65R099C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI65R099C6XKSA1 reliable?

The price and inventory of IPI65R099C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI65R099C6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPI65R099C6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI65R099C6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI65R099C6XKSA1?

IPI65R099C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI65R099C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI65R099C6XKSA1?

For technical support, including IPI65R099C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI65R099C6XKSA1 requirements.

6.How does Aetrix verify that IPI65R099C6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI65R099C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI65R099C6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPI65R099C6XKSA1?

All IPI65R099C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI65R099C6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI65R099C6XKSA1 part is unused and in its original packaging.

Return procedure for IPI65R099C6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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