Infineon Technologies IPI65R110CFDXKSA1

Overview

IPI65R110CFDXKSA1 from Infineon Technologies is a 650 V, 31.2 A (T_C = 25°C), 0.11 Ω R_DS(on) CoolMOS™ CFD2 superjunction MOSFET in PG-TO262 (D²PAK) package, featuring ultra-fast body diode (t_rr = 150 ns, Q_rr = 0.8 µC), high commutation ruggedness (di/dt = 900 A/µs), and low E_oss (9.2 µJ @ 400 V), designed for resonant LLC and ZVS-PWM stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPI65R110CFDXKSA1 datasheet, IPI65R110CFDXKSA1 pinout, IPI65R110CFDXKSA1 application, or IPI65R110CFDXKSA1 equivalent, key selection criteria include body diode robustness under hard commutation, R_DS(on) × Q_g figure-of-merit (118 nC × 0.11 Ω = 12.98 Ω·nC), thermal resistance (R_thJC = 0.45 °C/W), gate plateau voltage (6.4 V), and TO-262 mounting torque specification (50 Ncm).

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD superjunction architecture with optimized charge balancing and trench-gate field plate design, enabling simultaneous reduction of conduction loss (R_DS(on) = 0.11 Ω) and switching loss (E_oss = 9.2 µJ). Its body diode exhibits controlled reverse recovery with low Q_rr (0.8 µC) and minimal Irrm (8.3 A), critical for zero-voltage-switching reliability.

The D²PAK package provides low junction-to-case thermal resistance (0.45 °C/W), supporting high-power density designs without heatsink derating penalties. Gate drive behavior is stabilized by low gate resistance (R_G = 1.3 Ω) and well-defined plateau voltage (6.4 V), ensuring predictable turn-on timing and reduced gate driver stress in high-frequency (>100 kHz) topologies.

Key Specifications

Pinout & Package

Package: PG-TO262 (D²PAK), surface-mount, single-ended drain-source-gate configuration with isolated tab (drain-connected). Mounting torque: 50 Ncm (M2.5 screw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R110CFD and IPP65R110CFD, IPI65R110CFDXKSA1 delivers identical electrical performance in a surface-mount D²PAK package optimized for automated assembly and high-power-density PCB layouts-offering superior thermal interface consistency over TO-220 while avoiding TO-247 mechanical complexity.

Availability

IPI65R110CFDXKSA1 is available at Aetrix Electronics and suitable for server PSU LLC resonant converters, telecom rectifier ZVS stages, and solar microinverter DC-DC stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IPI65R110CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon-based high-voltage MOSFETs and SiC devices.

This part belongs to the CoolMOS™ CFD2 product line, engineered specifically for high-efficiency, high-frequency resonant and soft-switching topologies in industrial power supplies, telecom infrastructure, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPI65R110CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 19.7 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.6 datasheet. This rating is thermally limited-not current-limited-and assumes proper PCB copper area (6 cm²) and no forced airflow per JEDEC test conditions.

Does IPI65R110CFDXKSA1 support gate drive voltages above 10 V?

Yes-gate-source voltage is rated up to ±20 V DC (±30 V AC), with V_GS(th) = 3.5–4.5 V and gate plateau at 6.4 V. Driving at 12–15 V improves R_DS(on) stability and reduces conduction loss, provided gate resistor limits peak current to avoid overshoot.

How does the body diode performance compare to standard SJ MOSFETs?

Its body diode achieves t_rr = 150 ns and Q_rr = 0.8 µC at di/dt = 100 A/µs-significantly faster and lower-charge than first-gen CoolMOS™ or generic SJ MOSFETs-enabling reliable ZVS in LLC and reducing snubber losses by >30% in tested 250 kHz designs.

Is the D²PAK package lead-free and RoHS-compliant?

Yes-the device uses Pb-free plating and halogen-free mold compound, certified to RoHS Directive 2011/65/EU and IPC-J-STD-609A Class 1. Reflow profile follows JEDEC J-STD-020D MSL Level 1 with peak temperature ≤260°C for 10 seconds.