Infineon Technologies IPI65R150CFDXKSA1
- Part No.:
- IPI65R150CFDXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI65R150CFDXKSA1.pdf
- Description:
- MOSFET N-CH 650V 22.4A TO262-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IPI65R150CFDXKSA1 from Infineon Technologies is a 650 V, 22.4 A (TC = 25°C) superjunction N-channel power MOSFET in the CoolMOS™ CFD2 family, featuring RDS(on) = 0.15 Ω (max), Qg = 86 nC (typ), and ultra-fast body diode with trr = 140 ns - designed for high-efficiency resonant switching in server SMPS and telecom rectifier stages.
For engineers reviewing the IPI65R150CFDXKSA1 datasheet, IPI65R150CFDXKSA1 pinout, IPI65R150CFDXKSA1 application, or IPI65R150CFDXKSA1 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), low Eoss (6.8 µJ @ 400 V), and TO-262 (D²PAK) thermal resistance (RthJC = 0.64 °C/W).
Technical Context
This device implements Infineon's second-generation CoolMOS™ superjunction architecture with charge compensation trenches, enabling simultaneous reduction of conduction and switching losses. Its optimized gate charge profile (Qgs = 15 nC, Qgd = 47 nC) supports clean hard-switching and ZVS/ZCS operation in LLC and phase-shifted full-bridge topologies.
The integrated ultra-fast body diode delivers robust reverse recovery (Qrr = 0.7 µC, Irrm = 8.8 A) without external snubbers, while dv/dt ruggedness of 50 V/ns ensures stable operation under high dV/dt stress in high-frequency bridge legs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - rated blocking voltage for primary-side switching in 400 V DC-link industrial and telecom PSUs |
| RDS(on) | 0.15 Ω max @ VGS = 10 V, TJ = 25°C - enables <1.5 W conduction loss at 12 A continuous drain current |
| Qg | 86 nC typ - determines gate drive power requirement and switching speed in 100–300 kHz designs |
| Eoss | 6.8 µJ @ 400 V - directly reduces turn-on switching loss in resonant converters |
| trr | 140 ns - supports fast commutation in synchronous rectification and half-bridge freewheeling |
| di/dt rating | 900 A/µs - guarantees reliable operation during hard commutation without parasitic turn-on |
| RthJC | 0.64 °C/W - enables 195 W power dissipation at TC = 25°C in D²PAK package |
Pinout & Package
Package: PG-TO262 (D²PAK), surface-mount, single-ended heatsink mounting via drain tab. Thermal pad electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | High-impedance MOS gate requiring 10 V drive; RG = 1.5 Ω typical for optimal switching trade-off |
| Pin 2 (Drain) | High-voltage power terminal | Internally connected to thermal pad; carries full load current and must be routed on large copper area for thermal management |
| Pin 3 (Source) | Power return / reference node | Low-inductance source connection critical for minimizing gate oscillation and EMI in high-di/dt operation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast body diode | trr = 140 ns, Qrr = 0.7 µC - eliminates need for external anti-parallel diodes in flyback and LLC freewheel paths |
| High commutation ruggedness | di/dt = 900 A/µs - prevents false triggering during hard-switched transitions in PFC and inverter bridges |
| Low figure-of-merit | RDS(on) × Qg = 12.9 Ω·nC - balances conduction and switching losses for 100–250 kHz operation |
| Industrial-grade qualification | JEDEC J-STD-020 & JESD22 compliant - validated for 150°C operating temperature and long-term reliability in harsh environments |
Applications
| Server SMPS Primary Switch | Telecom Rectifier Stage |
|---|---|
Use Scenario: High-density 1U server power supply operating at 200 kHz with LLC resonant topology and 48 V output. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC-link, synchronized with secondary-side SR controller. Use Value: Low Eoss (6.8 µJ) and fast trr reduce dead-time losses and improve ZVS range across 20–100% load. |
Use Scenario: -48 V telecom rectifier module with active clamp forward converter and 3 kW output. IC Role / Device Role / Timing Role: Main switch in active clamp circuit, subjected to repetitive avalanche and high dv/dt stress. Use Value: 50 V/ns dv/dt ruggedness and 614 mJ single-pulse avalanche energy ensure reliability under line transients and soft-start surges. |
| Solar Microinverter DC-DC Stage | Industrial LED Driver PFC |
Use Scenario: 300 W microinverter with interleaved boost + H-bridge inverter, operating in outdoor ambient up to 85°C. IC Role / Device Role / Timing Role: Boost switch in high-efficiency interleaved PFC stage, switching at 120 kHz. Use Value: RthJC = 0.64 °C/W and 150°C TJ(max) allow full 22.4 A rating with minimal heatsink in compact sealed enclosure. |
Use Scenario: 150 W constant-current LED driver for street lighting with two-stage PFC + flyback. IC Role / Device Role / Timing Role: Flyback primary switch in quasi-resonant mode, requiring low Qg and robust body diode. Use Value: Qg = 86 nC and ultra-fast body diode (trr = 140 ns) enable >94% efficiency and eliminate snubber losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R150CFD | TO-247 package, RthJC = 0.64 °C/W, same electrical specs | Better thermal performance in forced-air cooled systems; requires through-hole PCB layout | Select when higher power derating margin or legacy TO-247 footprint is required |
| IPP65R150CFD | TO-220 package, RthJC = 0.64 °C/W, identical die but different leadframe | Lower cost and simpler assembly; limited to lower-power (<120 W) applications due to reduced creepage | Select for cost-sensitive industrial AC-DC adapters where TO-220 mechanical fit is mandatory |
Compared with IPW65R150CFD and IPP65R150CFD, IPI65R150CFDXKSA1 offers identical silicon performance in a surface-mount D²PAK package-enabling automated assembly, improved board-level reliability, and better thermal interface control via soldered thermal pad, while maintaining full compatibility in resonant and hard-switched topologies.
Availability
IPI65R150CFDXKSA1 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, solar microinverters, and industrial LED drivers requiring stable component supply, long lifecycle support, and JEDEC-qualified reliability.
Supply support for IPI65R150CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices since 1999.
The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency, high-reliability resonant and hard-switched SMPS in industrial, telecom, and renewable energy systems - emphasizing low Eoss, fast body diode, and rugged commutation.
FAQ
What is the maximum continuous drain current for IPI65R150CFDXKSA1 at 100°C case temperature?
The maximum continuous drain current is 14.2 A at TC = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limits of the D²PAK package and ensures safe operation without exceeding 150°C junction temperature under sustained load conditions.
Does IPI65R150CFDXKSA1 require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage (VGS(th)) of 3.5–4.5 V and is fully enhanced at VGS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended per Infineon's application guidelines for CFD2 series.
Can IPI65R150CFDXKSA1 replace standard 650 V SJ-MOSFETs in existing PFC designs?
Yes - it is a direct drop-in replacement for other 650 V, 0.15 Ω RDS(on) superjunction MOSFETs in PFC boost stages, provided gate drive strength (≥1 A peak) and PCB layout accommodate its D²PAK thermal pad. Its lower Qg and Eoss typically improve efficiency by 0.3–0.5% over first-gen CoolMOS™ variants.
Is the drain-source breakdown voltage tested at production level?
Yes. Every unit undergoes 100% production test for V(BR)DSS at 650 V minimum, with ID = 1 mA, per Infineon's quality protocol. The datasheet specifies V(BR)DSS = 650 V (min), and typical measured values exceed 680 V, ensuring margin against line surges in 400 V DC-link applications.
IPI65R150CFDXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 22.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2340 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 195.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3-1
IPI65R150CFDXKSA1 FAQ
1.How can I place an order for IPI65R150CFDXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI65R150CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI65R150CFDXKSA1 reliable?
The price and inventory of IPI65R150CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI65R150CFDXKSA1 is usually 5 days.
3.What payment methods are accepted for IPI65R150CFDXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI65R150CFDXKSA1 transactions.
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4.How is shipping managed for IPI65R150CFDXKSA1?
IPI65R150CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI65R150CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI65R150CFDXKSA1?
For technical support, including IPI65R150CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI65R150CFDXKSA1 requirements.
6.How does Aetrix verify that IPI65R150CFDXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI65R150CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI65R150CFDXKSA1 meets industry standards.
7.What is the process for return or replacement of IPI65R150CFDXKSA1?
All IPI65R150CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI65R150CFDXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI65R150CFDXKSA1 part is unused and in its original packaging.
Return procedure for IPI65R150CFDXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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