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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI65R190C6XKSA1

Name: IPI65R190C6XKSA1
Brand: Infineon Technologies
SKU: IPI65R190C6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI65R190C6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI65R190C6XKSA1.pdf

Description:: IPI65R190C6 - 650V-700V COOLMOS

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Product details

Overview

IPI65R190C6XKSA1 from Infineon Technologies is a 650 V, 20.2 A (T_C = 25 °C) superjunction N-channel power MOSFET in PG-TO262 package, optimized for high-efficiency hard-switching and resonant PFC and PWM stages. It features R_DS(on) = 0.19 Ω (max), Q_g = 73 nC (typ), E_oss = 5.9 µJ @ 400 V, and 500 A/µs body diode commutation capability - deployed in server PSUs, telecom rectifiers, and LCD TV power supplies.

For engineers reviewing the IPI65R190C6XKSA1 datasheet, IPI65R190C6XKSA1 pinout, IPI65R190C6XKSA1 application, or IPI65R190C6XKSA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, JEDEC-qualified TO-262 thermal performance (R_thJC = 0.83 °C/W), and rugged 50 V/ns dv/dt rating for reliable operation in high-noise industrial converters.

Technical Context

This CoolMOS™ C6 device implements a charge-balanced superjunction structure enabling simultaneous reduction of conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) and plateau voltage (5.5 V) support standard 10–15 V gate drivers without level-shifting.

The integrated fast-recovery body diode (t_rr = 410 ns, Q_rr = 6.1 µC) and 500 A/µs di/dt rating allow robust operation in continuous conduction mode (CCM) PFC, while its 700 V V_DS rating at T_j,max ensures margin under transient overvoltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for primary-side switching in universal-input 400 V DC bus applications
R_DS(on), max	0.19 Ω @ T_j = 25 °C - enables <2 W conduction loss at 10 A RMS in 100 kHz PFC boost stage
Q_g, typ	73 nC - determines gate drive power requirement (~1.1 mW per MHz at 15 V drive)
E_oss @ 400 V	5.9 µJ - directly reduces turn-off energy loss and EMI in hard-switched topologies
Body diode dI/dt	500 A/µs - supports stable zero-current switching in LLC resonant converters
R_thJC	0.83 °C/W - allows 151 W power dissipation at T_C = 25 °C in TO-262 package
V_GS(th)	2.5–3.5 V - compatible with standard microcontroller GPIO or dedicated gate drivers without negative bias

Pinout & Package

Package: PG-TO262 (3-pin, through-hole, isolated tab). Thermal pad electrically connected to drain. Mounting torque: 60 N·cm (M3/M3.5 screws).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; requires ≤3.4 Ω series resistance to damp ringing per datasheet recommendation
Pin 2 (Drain)	High-voltage output terminal	Connected to primary winding or DC bus; tab is electrically tied to this pin for thermal conduction
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; must be low-inductance layout to minimize shoot-through risk

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	13.87 Ω·nC - enables >96% efficiency in 1 kW server PSU PFC stage at 100 kHz
High commutation ruggedness	500 A/µs di/dt rating - eliminates need for external snubbers in CCM boost converters
JEDEC-qualified reliability	Pb-free plating, halogen-free, J-STD-020 & JESD22 compliant - suitable for RoHS-compliant industrial production
Fast body diode	t_rr = 410 ns, Q_rr = 6.1 µC - reduces reverse recovery loss by ~40% vs. standard SJ MOSFETs in bridgeless PFC

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter in 1–3 kW telecom rectifier modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC input and 50–100 kHz switching.

Use Value: Low E_oss and 500 A/µs di/dt enable ZVS across full load range, reducing heatsink size by 30%.

Use Scenario: Boost PFC stage in -48 V telecom system with universal AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in critical conduction mode (CrM) or CCM.

Use Value: 0.19 Ω R_DS(on) minimizes conduction loss at 20 A peak, improving full-load efficiency to ≥95.2%.

LCD TV Power Board

Industrial UPS Inverter

Use Scenario: Main SMPS in 100–200 W LCD TV power board with active PFC + LLC half-bridge.

IC Role / Device Role / Timing Role: PFC switch operating at 65 kHz with 17.5 A pulsed current capability.

Use Value: Integrated body diode eliminates need for external anti-parallel diode, reducing BOM count and PCB area.

Use Scenario: H-bridge in 500 VA–1 kVA online UPS inverter stage with 50/60 Hz fundamental + 10–20 kHz carrier.

IC Role / Device Role / Timing Role: Low-loss switching element handling bidirectional current during PWM modulation.

Use Value: 700 V V_DS rating at T_j,max provides 20% overvoltage margin against line surges in unregulated grid environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R190C6	Same die, PG-TO247 package; R_thJC = 0.83 °C/W identical, but larger footprint and higher mounting torque (60 N·cm)	Better thermal dissipation in forced-air systems; requires larger PCB cutout and different heatsink interface	Select when higher power derating margin (>180 W) or legacy TO-247 mechanical compatibility is required
IPA65R190C6	Same die, PG-TO220 FullPAK package; R_thJC = 3.7 °C/W - significantly higher thermal resistance	Limited to ≤50 W continuous operation; unsuitable for >100 kHz PFC without aggressive cooling	Select only for cost-sensitive, low-power (<60 W), space-constrained designs where TO-220 footprint is mandatory

Compared with IPW65R190C6 and IPA65R190C6, IPI65R190C6 offers optimal balance of thermal performance (0.83 °C/W), compact TO-262 footprint, and industrial-grade ruggedness - making it the preferred choice for mid-power (100–500 W) server, telecom, and display power supplies requiring high reliability and layout flexibility.

Availability

IPI65R190C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and LCD TV power boards requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing traceability.

Supply support for IPI65R190C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 product line was engineered to deliver best-in-class efficiency and ruggedness for high-frequency, high-voltage power conversion in data center, telecom, and consumer power applications.

FAQ

What is the maximum continuous drain current for IPI65R190C6XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 12.8 A at T_C = 100 °C, as specified in Table 2 of the Final Data Sheet Rev. 2.0. This rating reflects thermal limitation of the PG-TO262 package under real-world heatsink conditions and must be applied with appropriate derating for ambient temperature and airflow.

Does IPI65R190C6XKSA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 2.5–3.5 V and is fully controllable with 0 V to 15 V gate drive. Negative gate bias is not required; however, a 0 V turn-off (not floating) is recommended to prevent spurious turn-on due to dv/dt coupling in high-speed layouts.

Can IPI65R190C6XKSA1 be paralleled with other CoolMOS™ C6 devices?

Yes, but with design precautions: use individual gate resistors (≥10 Ω) and ferrite beads on each gate line to suppress oscillation. The datasheet explicitly recommends this for paralleling, citing matching R_DS(on) and gate charge characteristics across the C6 family to ensure current sharing within ±10% at full load.

What is the avalanche energy rating for single-pulse operation?

The single-pulse avalanche energy (E_AS) is rated at 485 mJ under test conditions of I_D = 3.5 A and V_DD = 50 V. This rating applies to non-repetitive transient overvoltage events and is validated per JEDEC JESD22-A110, supporting robustness in flyback and active-clamp topologies.

IPI65R190C6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 730µA

Gate Charge (Qg) (Max) @ Vgs:: 73 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1620 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI65R190C6XKSA1 FAQ

1.How can I place an order for IPI65R190C6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI65R190C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI65R190C6XKSA1 reliable?

The price and inventory of IPI65R190C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI65R190C6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPI65R190C6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI65R190C6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI65R190C6XKSA1?

IPI65R190C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI65R190C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI65R190C6XKSA1?

For technical support, including IPI65R190C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI65R190C6XKSA1 requirements.

6.How does Aetrix verify that IPI65R190C6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI65R190C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI65R190C6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPI65R190C6XKSA1?

All IPI65R190C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI65R190C6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI65R190C6XKSA1 part is unused and in its original packaging.

Return procedure for IPI65R190C6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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