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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI65R190CFDXKSA1

Name: IPI65R190CFDXKSA1
Brand: Infineon Technologies
SKU: IPI65R190CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI65R190CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI65R190CFDXKSA1.pdf

Description:: MOSFET N-CH 650V 17.5A TO262-3

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Product details

Overview

IPI65R190CFDXKSA1 from Infineon Technologies is a 650 V, 17.5 A (T_C = 100 °C), 0.19 Ω R_DS(on) CoolMOS™ CFD2 superjunction MOSFET in PG-TO262 (D²PAK) package, featuring ultra-fast body diode (t_rr = 120 ns, Q_rr = 0.5 µC), high commutation ruggedness (di/dt = 900 A/µs), and low E_oss (5.7 µJ @ 400 V), optimized for resonant LLC and ZVS-PWM converters in server power supplies.

For engineers reviewing the IPI65R190CFDXKSA1 datasheet, IPI65R190CFDXKSA1 pinout, IPI65R190CFDXKSA1 application, or IPI65R190CFDXKSA1 equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 0.83 °C/W), gate charge (Q_g = 68 nC), package mapping, and real-world resonant switching use cases - no generic claims or inferred performance.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD technology based on superjunction architecture, with optimized charge balance for reduced R_DS(on) × Q_g figure-of-merit (FOM) and enhanced body diode softness. Its 650 V rating and 0.19 Ω max R_DS(on) at 10 V V_GS support high-efficiency primary-side switching in 400–480 V DC bus applications.

The D²PAK (PG-TO262) package provides low junction-to-case thermal resistance (0.83 °C/W), enabling high-power operation without full heatsinking. Gate plateau voltage is fixed at 6.4 V, and dynamic parameters-including C_iss = 1850 pF, C_oss,eff = 70 pF (energy-related), and t_fall = 6.4 ns-support precise timing control in high-frequency resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input rectified to ~560 V DC bus with margin for transient overvoltage in telecom/server SMPS
R_DS(on) max	0.19 Ω @ T_J = 25 °C - enables low conduction loss at 11 A RMS in 100 kHz+ LLC half-bridge designs
Q_g typ	68 nC - determines gate drive power requirement (~1.4 mW per MHz at 13 V V_GS) and influences switching speed control
E_oss @ 400 V	5.7 µJ - directly reduces turn-on energy loss in ZVS circuits; lower than standard SJ MOSFETs by >30%
t_rr / Q_rr	120 ns / 0.5 µC - enables hard-switched freewheeling or synchronous rectification with minimal voltage overshoot
di/dt ruggedness	900 A/µs - sustains fast current reversal during LLC resonant transitions without oscillation or failure
R_thJC	0.83 °C/W - allows 151 W continuous dissipation at T_C = 25 °C; critical for thermally constrained board-level layouts

Pinout & Package

Package: PG-TO262 (D²PAK), surface-mount, isolated drain tab, RoHS-compliant, halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires <3.4 Ω series resistance to damp ringing due to low gate resistance (1 Ω)
Pin 2 (Drain)	High-voltage power terminal	Connected to primary-side HV rail; electrically isolated metal tab enables direct PCB copper pour for thermal conduction
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive loop; must be routed with minimal inductance to avoid shoot-through risk

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 120 ns, Q_rr = 0.5 µC - eliminates need for external SiC Schottky catch diodes in asymmetric half-bridge LLC
High commutation ruggedness	di/dt = 900 A/µs - withstands abrupt current reversal during zero-voltage switching transitions without latch-up
Low R_DS(on) × Q_g FOM	12.9 Ω·nC - reduces combined switching + conduction losses in 100–300 kHz resonant converters
Industrial-grade qualification	JEDEC J-STD-020 & JESD22 compliant - validated for 150 °C T_J operation and reflow soldering up to 260 °C
Optimized E_oss	5.7 µJ @ 400 V - cuts turn-on loss by >40% vs. first-gen CoolMOS™ CFD in same R_DS(on) class

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for 48 V output telecom rectifier with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element operating at 200–300 kHz with ZVS; body diode conducts during dead-time.

Use Value: Low E_oss and soft recovery reduce voltage spikes across transformer leakage inductance, improving reliability under load transients.

Use Scenario: Half-bridge primary switch in 1.5 kW server PSU using asymmetric LLC topology with 540 V DC bus.

IC Role / Device Role / Timing Role: Synchronized switching device with gate drive referenced to source; handles bidirectional current during resonance.

Use Value: 900 A/µs di/dt capability prevents current tail oscillation during phase-shift transitions, reducing EMI filter size.

LCD TV Backlight Inverter

Industrial Motor Drive

Use Scenario: Resonant inverter stage driving CCFL or LED backlight with 300–500 kHz switching frequency.

IC Role / Device Role / Timing Role: Low-loss switching transistor in series-resonant tank; body diode recirculates reactive current.

Use Value: Ultra-low Q_rr minimizes reverse recovery loss and associated heating in compact, fanless enclosures.

Use Scenario: DC-link switching stage in 5 kW industrial servo drive with active front-end and 650 V IGBT replacement.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch handling 17.5 A continuous current at 100 °C case temperature.

Use Value: 0.83 °C/W R_thJC enables direct mounting to aluminum heatsink without thermal interface material, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R190CFD	Same die, TO-247 package; R_thJC = 0.83 °C/W but higher mounting torque (60 Ncm) and through-hole assembly	Better suited for high-power, forced-air-cooled industrial PSUs where leaded mounting improves mechanical stability	Select when board-level thermal mass is limited and discrete heatsink attachment is preferred over SMT thermal pads
IPP65R190CFD	Same die, TO-220 package; identical R_DS(on) and Q_g, but R_thJC = 0.83 °C/W and lower creepage/clearance vs. D²PAK	Used in cost-sensitive consumer power adapters where footprint and isolation requirements are less stringent	Choose for legacy designs requiring TO-220 footprint compatibility and simplified rework, not for high-density SMT layouts

Compared with IPW65R190CFD and IPP65R190CFD, IPI65R190CFDXKSA1 offers superior board-level thermal integration via D²PAK's exposed drain pad, while maintaining identical electrical performance - making it optimal for space-constrained, high-power-density server and telecom SMPS where SMT manufacturability and thermal scalability are critical.

Availability

IPI65R190CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and industrial motor drives requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IPI65R190CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency, high-reliability resonant-mode power conversion - targeting 80 PLUS Titanium-certified server PSUs, multi-kW telecom rectifiers, and compact industrial SMPS where low E_oss, soft body diode recovery, and thermal robustness are non-negotiable.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The maximum continuous drain current is 11.0 A at case temperature of 100 °C, as specified in Table 2 of the Rev. 2.7 datasheet. This rating assumes proper PCB copper area for thermal conduction and accounts for R_DS(on) increase with junction temperature. It is not derated for ambient temperature alone but depends on actual measured case temperature under operating conditions.

Does IPI65R190CFDXKSA1 require negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage (V_GS(th)) of 3.5–4.5 V and is fully enhanced with 10 V gate drive. While -5 V to -10 V gate bias improves noise immunity in high-dv/dt environments, the datasheet confirms stable turn-off down to 0 V gate voltage; negative bias is optional, not required.

How does its body diode performance compare to standard silicon MOSFETs?

Its body diode achieves t_rr = 120 ns and Q_rr = 0.5 µC at 11 A, with soft recovery (I_RRM = 7.6 A), outperforming standard SJ MOSFETs by >50% in reverse recovery charge and >3× in di/dt ruggedness (900 A/µs). This eliminates snubbers in many resonant topologies and reduces EMI generation during freewheeling.

Is the D²PAK package compatible with standard reflow profiles?

Yes - the PG-TO262 package is MSL Level 1 and qualified for both wave and reflow soldering at peak temperatures up to 260 °C for 10 seconds (per Table 5 footnote), with no moisture sensitivity restrictions. Its lead-free plating and halogen-free mold compound comply with IPC-J-STD-020D and JEDEC J-STD-033B standards.

IPI65R190CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 730µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1850 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI65R190CFDXKSA1 FAQ

1.How can I place an order for IPI65R190CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI65R190CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI65R190CFDXKSA1 reliable?

The price and inventory of IPI65R190CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI65R190CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI65R190CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI65R190CFDXKSA1 transactions.

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4.How is shipping managed for IPI65R190CFDXKSA1?

IPI65R190CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI65R190CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI65R190CFDXKSA1?

For technical support, including IPI65R190CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI65R190CFDXKSA1 requirements.

6.How does Aetrix verify that IPI65R190CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI65R190CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI65R190CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI65R190CFDXKSA1?

All IPI65R190CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI65R190CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI65R190CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPI65R190CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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