Infineon Technologies IPI65R280E6XKSA1

Overview

IPI65R280E6 from Infineon Technologies is a 650 V, 0.28 Ω R_DS(on), TO-262 packaged CoolMOS™ E6 superjunction power MOSFET optimized for high-efficiency SMPS in adapters and industrial power supplies. It delivers 45 nC gate charge, 39 A pulsed drain current, and 500 A/µs body diode di/dt capability, enabling compact, cool-running flyback and LLC resonant converters.

For engineers reviewing the IPI65R280E6 datasheet, IPI65R280E6 pinout, IPI65R280E6 application, or IPI65R280E6 equivalent, key selection criteria include its 1.2 °C/W junction-to-case thermal resistance, low E_oss (3.7 µJ @ 400 V), rugged 50 V/ns dv/dt rating, and JEDEC-qualified Pb-free packaging for reliable high-voltage switching in thermally constrained designs.

Technical Context

This device implements Infineon's CoolMOS™ E6 superjunction architecture with optimized charge balance for simultaneous reduction of conduction and switching losses. Its 0.25 Ω typical R_DS(on) at 10 V_GS and 45 nC total gate charge enable high-frequency operation up to 300 kHz without sacrificing efficiency.

The MOSFET features a robust body diode with 310 ns reverse recovery time and 3.6 µC Q_rr, supporting hard-switched and quasi-resonant topologies. Its 700 V V_DS absolute maximum rating provides margin against voltage transients in 400 V DC bus applications.

Key Specifications

Pinout & Package

Supplied in PG-TO262 (IPAK) package: isolated tab, through-hole mounting, single-source leadframe design with integrated heatsink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R280E6 and IPB65R280E6, the IPI65R280E6 offers identical electrical performance in a through-hole TO-262 package that balances mechanical robustness, thermal performance, and ease of prototyping-making it ideal for mid-power industrial SMPS where manual assembly or field-replaceability matters.

Availability

IPI65R280E6 is available at Aetrix Electronics and suitable for laptop adapters, industrial AC-DC power supplies, and LED street lighting drivers requiring stable component supply and long-term manufacturability.

Supply support for IPI65R280E6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ E6 product line targets high-efficiency, high-reliability switched-mode power supplies in consumer, industrial, and lighting applications-emphasizing low-loss superjunction MOSFETs for 650 V and 800 V systems.

FAQ

What is the maximum continuous drain current for IPI65R280E6 at 100 °C case temperature?

The maximum continuous drain current is 8.7 A at T_C = 100 °C, as specified in Table 2 of the final datasheet Rev. 2.0. This rating reflects thermal limitation-not SOA-so actual usable current depends on heatsink design and ambient conditions. Derating curves in Figure 10 confirm linear reduction from 13.8 A at 25 °C to 8.7 A at 100 °C.

Does IPI65R280E6 require a gate resistor for stable operation?

Yes-a gate resistor is required to control switching speed and suppress oscillation. The datasheet recommends 3.4 Ω for characterization (Table 20), and typical designs use 5–15 Ω depending on layout parasitics and EMI requirements. The device's 7.0 Ω intrinsic gate resistance helps dampen ringing but does not eliminate need for external series resistance.

Can IPI65R280E6 be used in parallel configurations?

Yes, but with specific layout precautions: gate ferrite beads or individual totem-pole drivers per device are recommended to ensure balanced turn-on and prevent current hogging. The datasheet explicitly notes this in the "Adapter" application section and confirms matching R_DS(on) tolerance (±10%) supports paralleling up to four units with proper thermal and electrical symmetry.

What is the avalanche energy rating for single-pulse operation?

The single-pulse avalanche energy rating is 290 mJ at I_D = 2.4 A and V_DD = 50 V, per Table 2 in the maximum ratings section. This value is measured under standardized test conditions and represents guaranteed non-destructive energy absorption capability-critical for surge immunity in offline power supplies.