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Infineon Technologies IPI65R420CFDXKSA1

Part No.:
IPI65R420CFDXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI65R420CFDXKSA1.pdf
Description:
MOSFET N-CH 650V 8.7A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,162

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Product details

Overview

IPI65R420CFDXKSA1 from Infineon Technologies is a 650 V, 0.42 Ω RDS(on), TO-262-packaged CoolMOS™ CFD2 superjunction MOSFET optimized for resonant switching in high-efficiency AC-DC power supplies. It delivers 31.5 nC gate charge, 90 ns reverse recovery time, and 900 A/µs body diode di/dt capability, enabling reliable operation in LLC and PFC stages of server PSUs and telecom rectifiers.

For engineers reviewing the IPI65R420CFDXKSA1 datasheet, IPI65R420CFDXKSA1 pinout, IPI65R420CFDXKSA1 application, or IPI65R420CFDXKSA1 equivalent, key selection criteria include its ultra-fast body diode robustness, low Eoss (2.8 µJ at 400 V), JEDEC industrial qualification, and thermal resistance of 1.5 °C/W (junction-to-case) in TO-262 package.

Technical Context

This device implements Infineon's superjunction architecture with charge compensation trenches to achieve high voltage blocking (650 V) while minimizing conduction and switching losses. Its gate threshold voltage (3.5–4.5 V) and plateau voltage (6.4 V) support standard 10 V gate drive, and its low Qg/RDS(on) figure-of-merit enables high-frequency operation up to 300 kHz in soft-switching topologies.

The integrated body diode exhibits 0.9 V forward voltage at 5.2 A and 90 ns trr, with commutation ruggedness validated at 900 A/µs di/dt and 50 V/ns dv/dt. Thermal design is supported by a 1.5 °C/W junction-to-case resistance and JEDEC J-STD-20 reflow compliance for lead-free assembly.

Key Specifications

ParameterValue and Actual Design Meaning
VDS650 V - Enables use in universal-input (85–265 VAC) offline SMPS with sufficient margin against line transients.
RDS(on),max0.42 Ω @ 25°C - Delivers ≤1.8 W conduction loss at 7 A DC current, reducing heatsink requirements in 300–500 W designs.
Qg,typ31.5 nC - Determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers.
Eoss@400V2.8 µJ - Low stored output capacitance energy minimizes turn-on switching loss in ZVS circuits.
trr90 ns - Enables clean zero-current switching in LLC resonant converters without tail current oscillation.
Rth(j-c)1.5 °C/W - Allows direct mounting to heatsinks with predictable thermal rise; supports >80 W continuous dissipation at Tc = 100°C.

Pinout & Package

Package: PG-TO262 (TO-262), surface-mount variant of TO-220 with isolated flange, RoHS-compliant, halogen-free mold compound.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives PWM signal; requires 10 V drive for full enhancement; gate resistance 4 Ω limits ringing.
Pin 2 (Drain)High-side power nodeConnected to primary winding or bus rail; carries full switching current and withstands 650 V blocking.
Pin 3 (Source)Power return / referenceServes as local ground reference for gate driver; ties to source of synchronous rectifier or current sense resistor.

Key Features

FeatureDesign Value
Ultra-fast body diode90 ns trr, 6.2 A IRRM, and 900 A/µs di/dt rating enable reliable hard-commutation in asymmetric half-bridge PFC.
Low FOM (RDS(on) × Qg)13.2 Ω·nC - Balances conduction and switching loss for optimal efficiency across 100–300 kHz LLC operating range.
Industrial-grade qualificationJEDEC J-STD-20 and JESD22 compliant - Validated for 150°C operation and 1000-cycle temperature cycling reliability.
Robust dv/dt immunity50 V/ns - Prevents false turn-on during high dV/dt transitions in high-frequency bridge configurations.

Applications

Server Power SupplyTelecom Rectifier

Use Scenario: Primary-side switch in 80 PLUS Titanium 1 kW LLC resonant converter.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge LLC topology; operates in zero-voltage switching mode at 250 kHz.

Use Value: Low Eoss (2.8 µJ) and fast trr (90 ns) reduce turn-on loss and eliminate diode reverse recovery spikes, improving efficiency by ≥0.4% at full load.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier.

IC Role / Device Role / Timing Role: Main switching transistor handling 30 A pulsed drain current with 650 V bus clamping.

Use Value: 900 A/µs di/dt ruggedness ensures stable commutation under dynamic load steps without shoot-through risk.

LCD TV Backlight InverterIndustrial AC-DC Adapter

Use Scenario: Resonant half-bridge driver for CCFL or LED backlight in 42–65 inch LCD TVs.

IC Role / Device Role / Timing Role: Fast-switching power switch operating at 50–150 kHz with tight dead-time control.

Use Value: 0.42 Ω RDS(on) and 31.5 nC Qg allow compact gate drive design while maintaining <1.2 W conduction loss at 5 A RMS.

Use Scenario: Primary switch in 300 W industrial AC-DC adapter with wide ambient range (-40°C to +85°C).

IC Role / Device Role / Timing Role: Hard-switched flyback or quasi-resonant controller in enclosed, convection-cooled enclosure.

Use Value: 150°C max junction temperature and 1.5 °C/W Rth(j-c) support reliable operation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW65R420CFDSame die, TO-247 package; Rth(j-c) = 1.5 °C/W but higher mechanical profile and screw-mount requirement.Better suited for high-power (>1 kW), forced-air-cooled systems where PCB space is less constrained.Select when thermal interface uses thermal paste + heatsink screws and board layout accommodates larger footprint.
IPB65R420CFDSame die, D²PAK (TO-263) package; identical Rth(j-c) but SMD-compatible; slightly higher RDS(on) drift over temperature.Preferred for automated SMT production and compact, double-sided PCBs with limited height clearance.Select when surface-mount assembly, reflow compatibility, and reduced assembly cost outweigh minor thermal derating.

Compared with IPW65R420CFD and IPB65R420CFD, IPI65R420CFDXKSA1 offers identical electrical performance in a through-hole TO-262 package that balances mechanical robustness, thermal performance, and ease of manual or wave-solder assembly-ideal for mid-volume industrial power supplies requiring field-replaceability and serviceability.

Availability

IPI65R420CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial AC-DC adapters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across manufacturing lots.

Supply support for IPI65R420CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication facilities.

This part belongs to the CoolMOS™ CFD2 product line, engineered specifically for high-efficiency resonant and soft-switching power conversion in industrial and telecom infrastructure, emphasizing body diode robustness and low-loss operation above 100 kHz.

FAQ

What is the maximum continuous drain current for IPI65R420CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 5.5 A at TC = 100°C, limited by junction temperature constraints. This value is derived from thermal resistance (1.5 °C/W) and maximum junction temperature (150°C), ensuring safe operation without exceeding thermal limits under steady-state conduction.

Does IPI65R420CFDXKSA1 support gate drive with 5 V logic-level controllers?

No-it requires minimum 10 V gate-source voltage for full enhancement, with VGS(th) specified from 3.5 V to 4.5 V. Driving with only 5 V results in incomplete turn-on, elevated RDS(on), and excessive conduction loss; a dedicated gate driver with ≥12 V output is recommended.

Can this MOSFET replace older CoolMOS™ CFD1 devices in existing designs?

Yes-pin-compatible with CFD1 counterparts in TO-262, and offers improved trr (90 ns vs. 120–150 ns), lower Qg, and enhanced di/dt ruggedness. Layout changes are unnecessary, but gate resistor tuning may be needed to optimize switching speed and EMI.

Is halogen-free packaging confirmed for IPI65R420CFDXKSA1?

Yes-the "XKSA1" suffix denotes halogen-free mold compound per IEC 61249-2-21, verified in Infineon's official documentation. This meets RoHS and IPC-1752A environmental compliance requirements for industrial and telecom end equipment.

IPI65R420CFDXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
83.3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI65R420CFDXKSA1 FAQ

1.How can I place an order for IPI65R420CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI65R420CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI65R420CFDXKSA1 reliable?

The price and inventory of IPI65R420CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI65R420CFDXKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI65R420CFDXKSA1 transactions.

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IPI65R420CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI65R420CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI65R420CFDXKSA1?

For technical support, including IPI65R420CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI65R420CFDXKSA1 requirements.

6.How does Aetrix verify that IPI65R420CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI65R420CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI65R420CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI65R420CFDXKSA1?

All IPI65R420CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI65R420CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI65R420CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPI65R420CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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