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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI70N04S406AKSA1

Name: IPI70N04S406AKSA1
Brand: Infineon Technologies
SKU: IPI70N04S406AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI70N04S406AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI70N04S406AKSA1.pdf

Description:: MOSFET N-CH 40V 70A TO262-3

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Product details

Overview

IPI70N04S406AKSA1 from Infineon Technologies is a 40 V, 70 A N-channel enhancement-mode MOSFET in PG-TO262-3-1 package, AEC-qualified for automotive powertrain and body electronics, with 6.2 mΩ max R_DS(on) at V_GS = 10 V, 100% avalanche tested, and rated for 175 °C operation.

For engineers reviewing the IPI70N04S406AKSA1 datasheet, IPI70N04S406AKSA1 pinout, IPI70N04S406AKSA1 application, or IPI70N04S406AKSA1 equivalent, key selection criteria include continuous drain current at elevated case temperature, single-pulse avalanche energy (72 mJ), gate charge profile (Q_g = 24.5–32.0 nC), thermal resistance (R_thJC = 2.6 K/W), and automotive qualification status.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in DC-DC converters and motor control inverters. Its 5.6 mΩ typical R_DS(on) at 10 V gate drive enables high-efficiency 12 V/24 V automotive loads, while the 5.9 V gate plateau voltage supports robust PWM timing control under varying gate driver output impedance.

The MOSFET integrates an intrinsic fast-recovery body diode with t_rr = 36 ns and Q_rr = 31 nC at T_j = 25 °C, enabling synchronous rectification in buck converters without external Schottky diodes. Its 1960–2550 pF input capacitance and 15–35 pF reverse transfer capacitance define hard-switching gate drive requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with transient overvoltage margin.
R_DS(on), max	6.2 mΩ - Ensures ≤ 30.4 W conduction loss at 70 A DC, critical for thermally constrained engine bay modules.
I_D, cont	70 A @ T_C = 25 °C - Supports high-current solenoid drivers and HVAC blower motors without forced cooling.
E_AS	72 mJ - Withstands inductive kickback from 35 A loads without failure, validated per JEDEC JESD24-11.
Q_g	24.5–32.0 nC - Determines minimum gate driver peak current (≥ 2 A @ 10 ns rise time) for <10 ns turn-on delay.
t_r/t_f	10 ns / 9 ns - Enables >1 MHz switching in compact buck regulators with minimal switching loss trade-off.
V_GS(th)	2.0–4.0 V - Guarantees reliable turn-on with standard 3.3 V or 5 V logic-level controllers via level-shifting.

Pinout & Package

PG-TO262-3-1 is a surface-mount variant of TO-262 with isolated drain tab, 3-pin configuration, and lead-free RoHS-compliant finish. Thermal pad on drain terminal enables direct PCB copper pour attachment for low R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives PWM signal; requires 24.5–32.0 nC total charge to fully enhance channel; sensitive to ESD (±20 V absolute max).
2 (Drain)	High-side power path	Connected to load supply rail; electrically tied to exposed thermal pad; carries full load current and avalanche energy.
3 (Source)	Reference node	Return path for load current; establishes V_GS reference; must be low-inductance connection to minimize switching oscillation.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain applications including engine control units and transmission modules.
100% unclamped inductive switching (UIS) tested	Each unit passes single-pulse avalanche stress test at I_AS = 70 A and E_AS = 72 mJ, ensuring field reliability.
Optimized gate charge profile	Q_gd/Q_gs ratio of ~0.3 supports clean Miller plateau transition and reduces shoot-through risk in half-bridge designs.
Low R_thJC = 2.6 K/W	Enables >50 W power dissipation with ≤ 130 °C junction rise above 25 °C case, reducing heatsink size by 40% vs. legacy packages.
Green Product (RoHS compliant)	Lead-free termination and halogen-free molding compound meet EU Directive 2011/65/EU and IPC-1752A Tier 1 reporting.

Applications

Automotive Engine Control Unit (ECU)

12 V DC-DC Converter for ADAS Sensors

Use Scenario: Driving fuel injector solenoids with 5–10 ms pulse width at 12 V battery supply.

IC Role / Device Role / Timing Role: High-side switch controlling inductive load; handles repetitive UIS events during injector de-energization.

Use Value: 72 mJ avalanche rating prevents failure during 35 A inductive flyback, eliminating need for external snubbers.

Use Scenario: Synchronous rectifier in 300 kHz buck converter powering radar and camera modules.

IC Role / Device Role / Timing Role: Low-side switch with fast 9 ns fall time and 36 ns body diode recovery to minimize dead-time losses.

Use Value: 6.2 mΩ R_DS(on) cuts conduction loss by 35% vs. comparable 8 mΩ devices, improving efficiency from 92% to 94.2% at 15 A.

Electric Power Steering (EPS) Motor Driver

Body Control Module (BCM) Load Driver

Use Scenario: Half-bridge phase leg driving 3-phase BLDC assist motor up to 5 kW peak.

IC Role / Device Role / Timing Role: Low-side switch with 10 ns rise time and 24.5 nC Q_g enabling precise 100 ns gate timing resolution.

Use Value: 175 °C max junction temperature allows operation in sealed EPS housing without active cooling.

Use Scenario: Controlling headlight LED arrays and window lift motors in centralized BCM.

IC Role / Device Role / Timing Role: High-current load switch with integrated avalanche ruggedness for load dump transients.

Use Value: AEC-Q101 qualification ensures compliance with ISO 16750-2 pulse 5a/b surge immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB70N04S406AKSA1	PG-TO263-3-2 package; identical R_DS(on), Q_g, and avalanche rating; 0.2 K/W lower R_thJC.	Suitable for higher-power SMD layouts where larger thermal pad area is available.	Select when PCB layout permits larger copper pour and thermal relief is prioritized over height constraints.
IPP70N04S406AKSA1	PG-TO220-3-1 through-hole package; same electrical specs but R_thJC = 2.8 K/W and manual assembly compatible.	Preferred for prototyping, low-volume production, or legacy through-hole board designs.	Choose for hand-soldered evaluation or mixed-technology assemblies requiring mechanical robustness.

Compared with IPB70N04S406AKSA1 and IPP70N04S406AKSA1, IPI70N04S406AKSA1 offers optimal balance of thermal performance (2.6 K/W), SMD manufacturability, and footprint compatibility with automated pick-and-place-making it the default choice for high-volume automotive SMT production.

Availability

IPI70N04S406AKSA1 is available at Aetrix Electronics and suitable for automotive engine control units, 12 V DC-DC converters for ADAS sensors, and electric power steering motor drivers requiring stable component supply across multi-year vehicle programs.

Supply support for IPI70N04S406AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D centers and wafer fabs in Dresden and Villach.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V/24 V systems-including engine management, chassis control, and electrified powertrain subsystems.

FAQ

What is the maximum allowable gate-source voltage for IPI70N04S406AKSA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable PWM control, gate drive should be clamped to +10 V to ensure full enhancement while maintaining margin against overshoot during fast switching transitions.

Does IPI70N04S406AKSA1 require a gate resistor, and if so, what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress ringing. Based on its 24.5–32.0 nC total gate charge and typical 2 A gate driver output, a 3.5 Ω resistor is recommended (per datasheet test condition for t_d(on)/t_r). Lower values increase switching speed but raise EMI risk; higher values reduce losses but extend transition times and increase switching loss.

Is the body diode in IPI70N04S406AKSA1 suitable for synchronous rectification?

Yes-the intrinsic body diode has t_rr = 36 ns and Q_rr = 31 nC at 25 °C, enabling use in synchronous buck topologies up to 500 kHz. However, its V_SD = 0.9–1.3 V forward drop is higher than discrete Schottky diodes, so conduction loss must be evaluated against switching loss reduction in the target operating point.

How does the 175 °C maximum junction temperature impact thermal design?

The 175 °C rating allows operation in high-ambient environments like engine compartments without derating at temperatures up to 150 °C ambient, provided R_thJA ≤ 40 K/W (with 6 cm² PCB copper). This eliminates need for active cooling in many under-hood modules and simplifies heatsink selection versus 150 °C-rated alternatives.

IPI70N04S406AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI70N04S406AKSA1 FAQ

1.How can I place an order for IPI70N04S406AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI70N04S406AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI70N04S406AKSA1 reliable?

The price and inventory of IPI70N04S406AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI70N04S406AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI70N04S406AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI70N04S406AKSA1 transactions.

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4.How is shipping managed for IPI70N04S406AKSA1?

IPI70N04S406AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI70N04S406AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI70N04S406AKSA1?

For technical support, including IPI70N04S406AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI70N04S406AKSA1 requirements.

6.How does Aetrix verify that IPI70N04S406AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI70N04S406AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI70N04S406AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI70N04S406AKSA1?

All IPI70N04S406AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI70N04S406AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI70N04S406AKSA1 part is unused and in its original packaging.

Return procedure for IPI70N04S406AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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