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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI70N10S312AKSA1

Name: IPI70N10S312AKSA1
Brand: Infineon Technologies
SKU: IPI70N10S312AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI70N10S312AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI70N10S312AKSA1.pdf

Description:: MOSFET N-CH 100V 70A TO262-3

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Product details

Overview

IPI70N10S312AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 100 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 11.3 mΩ max R_DS(on) (SMD version). It operates up to 175 °C junction temperature and is 100% avalanche tested for robustness in automotive power switching applications such as DC-DC converters and motor control stages.

For engineers reviewing the IPI70N10S312AKSA1 datasheet, IPI70N10S312AKSA1 pinout, IPI70N10S312AKSA1 application, or IPI70N10S312AKSA1 equivalent, key selection criteria include its 1.2 K/W thermal resistance (junction-to-case), gate plateau voltage of 5.5 V, 410 mJ single-pulse avalanche energy, and compliance with RoHS and MSL1 reflow standards.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current 12 V automotive systems. Its 9.4–11.3 mΩ R_DS(on) range (at V_GS = 10 V, I_D = 70 A) enables efficient operation in synchronous rectification and H-bridge configurations.

The MOSFET features a fast 8 ns rise/fall time, 17 ns turn-on delay, and 25 ns turn-off delay under standard test conditions (V_DD = 20 V, R_G = 3.5 Ω). Its integrated body diode exhibits 0.6–1.2 V forward voltage at 70 A and 265 nC reverse recovery charge, supporting hard-switched and freewheeling roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 12 V battery rail systems with transient overvoltage margin
R_DS(on) max	11.3 mΩ - Confirmed for SMD variant at 25 °C, 10 V gate drive; impacts conduction loss in high-current paths
I_D continuous	70 A at T_C = 25 °C - Supports peak load currents in starter motors and EPS modules
E_AS	410 mJ - Single-pulse avalanche energy rating ensures ruggedness during inductive load switching
Q_g total	51–66 nC - Gate charge range determines driver strength requirement and switching speed trade-off
t_r/t_f	8 ns each - Fast edge rates reduce switching transition losses in PWM-controlled power stages
T_j max	+175 °C - Enables operation in under-hood environments without derating in most automotive zones

Pinout & Package

Package: PG-TO262-3-1 (leadless variant of TO-262, three-terminal surface-mount compatible with through-hole footprint). Thermal pad on drain terminal provides low-impedance heat path to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal, connected to thermal pad	Primary heat dissipation path; requires ≥6 cm² copper pour for 40 K/W R_thJA
Gate (G)	Control input for channel modulation	High-impedance node requiring low-inductance gate driver layout to avoid oscillation
Source (S)	Reference node for gate drive and current sensing	Common return path; critical for accurate current monitoring and stable gate bias

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, humidity, and mechanical shock per JESD22
100% avalanche tested	Each unit subjected to single-pulse avalanche stress at I_AS = 70 A, ensuring field reliability
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak, eliminating moisture sensitivity concerns
Green product (RoHS)	Lead-free terminations and halogen-free molding compound meet EU Directive 2011/65/EU
Optimized body diode	Low Q_rr (265 nC) and t_rr (≤100 ns) reduce reverse recovery losses in synchronous rectifiers

Applications

Engine Control Unit (ECU) Power Stage

Electric Power Steering (EPS) H-Bridge

Use Scenario: High-side/low-side switching of solenoid actuators and fuel injectors in engine management systems.

IC Role / Device Role / Timing Role: Discrete power switch controlling 12 V loads with precise PWM timing and fault-tolerant current handling.

Use Value: 70 A continuous rating and 410 mJ avalanche energy prevent failure during load dump transients and short-circuit events.

Use Scenario: Bidirectional motor drive in column-assist EPS systems requiring rapid direction reversal and torque response.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel MOSFET used in all four legs of H-bridge for efficient 12 V motor control.

Use Value: 11.3 mΩ R_DS(on) minimizes I²R losses at 50+ A peak currents, improving system efficiency and thermal margin.

Automotive DC-DC Converter

On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Primary-side synchronous rectifier in 12 V/48 V bidirectional buck-boost converters for mild hybrid architectures.

IC Role / Device Role / Timing Role: High-frequency switching element operating at 100–300 kHz with controlled dv/dt and low Q_gd.

Use Value: 12–19 nC Q_gd and 8 ns t_r/t_f enable clean switching transitions and reduced EMI generation.

Use Scenario: Isolated auxiliary power supply for gate drivers and microcontrollers in high-voltage OBC systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or forward converter delivering regulated 12 V output.

Use Value: Integrated body diode with 0.6–1.2 V V_SD supports reliable freewheeling during dead-time intervals without external Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB70N10S312AKSA1	PG-TO263-3-2 package; 1.2 K/W R_thJC; identical die but different thermal pad layout	Better PCB heat spreading due to exposed drain pad; suited for high-reliability SMD-only designs	Select when board space allows full SMD mounting and thermal performance exceeds TO262 requirements
IPP70N10S312AKSA1	PG-TO220-3-1 package; higher R_thJA (62 K/W); same electrical specs	Requires heatsink for >30 A operation; preferred for prototyping and lower-volume assemblies	Choose for manual assembly, legacy footprint compatibility, or cost-sensitive non-automotive applications

Compared with IPB70N10S312AKSA1 and IPP70N10S312AKSA1, IPI70N10S312AKSA1 balances thermal performance (1.2 K/W R_thJC) and manufacturability (TO262 leadframe with SMD-compatible footprint), making it optimal for automated production of AEC-Q101-compliant automotive modules where both reliability and process yield matter.

Availability

IPI70N10S312AKSA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and onboard DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPI70N10S312AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T family-designed specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding AEC-Q101 compliance and robust avalanche capability.

FAQ

What is the maximum gate-source voltage rating for IPI70N10S312AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 5.5 V gate plateau voltage confirmed in gate charge curves. Gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching.

Does IPI70N10S312AKSA1 require a heatsink in typical automotive applications?

At 70 A continuous current, a heatsink is required unless PCB copper area exceeds 6 cm² with 70 µm thickness and vertical mounting in still air. With those conditions, junction-to-ambient thermal resistance drops to 40 K/W, enabling ~31 W power dissipation at ΔT = 125 K. For sustained 50+ A loads, active cooling or forced convection is advised.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.6–1.2 V at 70 A and Q_rr = 265 nC, which is higher conduction loss than a 45 V Schottky but avoids extra component count and layout complexity. It is optimized for synchronous rectification-not ultra-fast recovery-so it suits medium-frequency (<300 kHz) applications where simplicity and reliability outweigh marginal efficiency gains.

Is IPI70N10S312AKSA1 suitable for 48 V mild hybrid systems?

Yes-it is rated for 100 V V_DS, providing sufficient margin above 48 V nominal bus (max transient ~70 V). Its 175 °C T_j rating and AEC-Q101 qualification make it appropriate for DC-DC converters and bi-directional power switches in 48 V architectures, provided thermal design accommodates increased I²R losses at higher voltages.

IPI70N10S312AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.6mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4355 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI70N10S312AKSA1 FAQ

1.How can I place an order for IPI70N10S312AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI70N10S312AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI70N10S312AKSA1 reliable?

The price and inventory of IPI70N10S312AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI70N10S312AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI70N10S312AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI70N10S312AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI70N10S312AKSA1?

IPI70N10S312AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI70N10S312AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI70N10S312AKSA1?

For technical support, including IPI70N10S312AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI70N10S312AKSA1 requirements.

6.How does Aetrix verify that IPI70N10S312AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI70N10S312AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI70N10S312AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI70N10S312AKSA1?

All IPI70N10S312AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI70N10S312AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI70N10S312AKSA1 part is unused and in its original packaging.

Return procedure for IPI70N10S312AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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