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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI70N10S3L12AKSA1

Name: IPI70N10S3L12AKSA1
Brand: Infineon Technologies
SKU: IPI70N10S3L12AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI70N10S3L12AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI70N10S3L12AKSA1.pdf

Description:: MOSFET N-CH 100V 70A TO262-3

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Product details

Overview

IPI70N10S3L12AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 100 V V_DS, 12.1 mΩ max R_DS(on) at V_GS = 10 V and I_D = 70 A, with 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and industrial power supplies.

For engineers reviewing the IPI70N10S3L12AKSA1 datasheet, IPI70N10S3L12AKSA1 pinout, IPI70N10S3L12AKSA1 application, or IPI70N10S3L12AKSA1 equivalent, key selection criteria include avalanche ruggedness (410 mJ single-pulse), gate charge profile (Q_g = 60–80 nC), thermal resistance (R_thJC = 1.2 K/W), and automotive-grade reliability under 100% avalanche testing.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining robust short-circuit withstand capability. Its gate threshold voltage (1.2–2.4 V) enables compatibility with 3.3 V and 5 V logic-level drivers.

The integrated body diode exhibits low forward voltage (V_SD = 0.6–1.2 V at 70 A) and fast reverse recovery (t_rr = 80 ns, Q_rr = 185 nC), supporting synchronous rectification and hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V automotive battery systems and 24 V industrial rails with margin for transients
R_DS(on) max	12.1 mΩ at V_GS = 10 V, I_D = 70 A - enables <1 W conduction loss at full load in 70 A switch nodes
Q_g	60–80 nC - determines gate drive power and switching speed in PWM frequencies up to 200 kHz
E_AS	410 mJ (I_D = 35 A) - ensures single-pulse avalanche survivability during inductive turn-off events
R_thJC	1.2 K/W - allows direct heatsink mounting for thermal management in compact power modules
t_rr	80 ns - minimizes diode commutation losses in half-bridge and synchronous buck configurations
T_j max	175 °C - enables operation in under-hood automotive environments without derating at ambient ≤125 °C

Pinout & Package

PG-TO262-3-1 is a surface-mount compatible variant of TO-262 with isolated drain tab, optimized for PCB thermal relief and automated assembly. The package features three terminals: Drain (tab), Source (pin 1), and Gate (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to copper tab; requires soldered thermal pad to PCB ground plane or heatsink for R_thJC = 1.2 K/W performance
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source routing and shunt-based current monitoring
Gate (Pin 2)	Control input for channel modulation	High-impedance node requiring <3.5 Ω series gate resistor to damp ringing and limit dV/dt-induced turn-on

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling
100% avalanche tested	Each unit subjected to controlled single-pulse avalanche stress to guarantee minimum E_AS = 410 mJ
Green product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU and JEDEC J-STD-020 reflow profile (MSL1, 260 °C peak)
Optimized gate charge profile	Q_gs/Q_gd ratio of ~1.5 supports stable Miller plateau control and reduces risk of spurious turn-on in high-dV/dt environments

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 100–200 kHz with forced-air cooling.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and commutation losses by >15% versus legacy 20 mΩ devices, improving system efficiency to >95%.

Use Scenario: Inverter stage in 3 kW servo drives for CNC machinery.

IC Role / Device Role / Timing Role: Phase-leg switch in three-phase IGBT/MOSFET hybrid topology with active gate control.

Use Value: 175 °C T_j rating and 1.2 K/W R_thJC allow sustained 70 A RMS operation without thermal throttling in sealed enclosures.

Onboard Charger (OBC) PFC Stage

Telecom Rectifier Modules

Use Scenario: Boost switch in 6.6 kW AC/DC OBC with interleaved PFC.

IC Role / Device Role / Timing Role: Fast-switching MOSFET driven by dedicated gate driver IC with adaptive dead-time control.

Use Value: 80 ns t_rr and 185 nC Q_rr suppress voltage overshoot during zero-current switching transitions, reducing snubber losses by 30%.

Use Scenario: Primary-side switch in 3 kW telecom rectifier with hold-up capacitor support.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward converter topology operating at 100 kHz with 100 V bus.

Use Value: 410 mJ E_AS withstands repeated line surge events (IEC 61000-4-5 Level 4), eliminating need for external clamping circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP70N10S3L-12	Same die, PG-TO220-3-1 package - higher R_thJA (62 K/W) and no SMD thermal pad	Suitable for prototyping and low-volume through-hole boards; not recommended for high-power density designs	Select when manual assembly, lower cost, or legacy footprint compatibility is prioritized over thermal performance
IPB70N10S3L-12	Same die, PG-TO263-3-2 package - exposed drain pad on bottom side, optimized for thermal vias	Better suited for multilayer PCBs with internal copper planes; requires stencil-defined solder paste volume control	Select when board-level thermal design includes ≥6 cm² copper area and vertical airflow cooling is available

Compared with IPP70N10S3L-12 and IPB70N10S3L-12, IPI70N10S3L12AKSA1 offers identical electrical specs but balances mechanical robustness, automated assembly compatibility, and thermal performance via its PG-TO262-3-1 leadframe - making it optimal for high-volume automotive production where reflow yield and heatsink interface consistency are critical.

Availability

IPI70N10S3L12AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and onboard charger PFC stages requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPI70N10S3L12AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T family, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial applications where ruggedness, thermal stability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 48 A at T_C = 100 °C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case thermal resistance and safe operating area limits, ensuring reliable operation without exceeding 175 °C maximum junction temperature.

Is this MOSFET suitable for use with 3.3 V microcontroller GPIOs?

No - the gate threshold voltage range is 1.2–2.4 V, but full enhancement requires ≥4.5 V for R_DS(on) ≤15.5 mΩ and ≥10 V for guaranteed 12.1 mΩ performance. Driving directly from 3.3 V GPIO will result in high conduction loss and thermal instability; a level-shifted gate driver is required.

Does the device include an integrated body diode, and what are its key parameters?

Yes - it features a monolithic fast-recovery body diode with continuous forward current rating of 70 A, pulse current up to 280 A, forward voltage of 0.6–1.2 V at 70 A and 25 °C, reverse recovery time of 80 ns, and reverse recovery charge of 185 nC. These values are measured under standardized conditions (V_R = 50 V, dI/dt = 100 A/µs) and support synchronous rectification.

How does the 100% avalanche testing impact reliability in real-world circuits?

Each unit undergoes controlled single-pulse avalanche stress to verify minimum energy handling of 410 mJ. This ensures robustness against inductive switching transients, such as those occurring during motor phase commutation or relay coil de-energization, preventing latent failures that could arise from untested avalanche capability in safety-critical automotive systems.

IPI70N10S3L12AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI70N10S3L12AKSA1 FAQ

1.How can I place an order for IPI70N10S3L12AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI70N10S3L12AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI70N10S3L12AKSA1 reliable?

The price and inventory of IPI70N10S3L12AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI70N10S3L12AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI70N10S3L12AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI70N10S3L12AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI70N10S3L12AKSA1?

IPI70N10S3L12AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI70N10S3L12AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI70N10S3L12AKSA1?

For technical support, including IPI70N10S3L12AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI70N10S3L12AKSA1 requirements.

6.How does Aetrix verify that IPI70N10S3L12AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI70N10S3L12AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI70N10S3L12AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI70N10S3L12AKSA1?

All IPI70N10S3L12AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI70N10S3L12AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI70N10S3L12AKSA1 part is unused and in its original packaging.

Return procedure for IPI70N10S3L12AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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