Infineon Technologies IPI70N10SL16AKSA1

Overview

IPI70N10SL16AKSA1 from Infineon Technologies is an N-channel logic-level SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 70 A continuous drain current at T_C = 25 °C, and 16 mΩ maximum R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C operating temperature, and PG-TO262-3-1 package - optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IPI70N10SL16AKSA1 datasheet, IPI70N10SL16AKSA1 pinout, IPI70N10SL16AKSA1 application, or IPI70N10SL16AKSA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 700 mJ single-pulse avalanche energy, 1.2–2.0 V gate threshold range, and thermal resistance of 0.6 K/W junction-to-case.

Technical Context

This MOSFET operates in enhancement mode with a fully characterized gate charge profile (Q_g = 160–240 nC, Q_gd = 34–51 nC) enabling precise PWM timing control in synchronous buck stages. Its low Crss (345–430 pF) and fast switching (t_r = 250–375 ns, t_f = 95–145 ns) support high-frequency operation up to 500 kHz without excessive switching loss.

The device integrates a robust body diode with 100–150 ns reverse recovery time (t_rr) and 600–900 nC Q_rr, validated under 100 A/µs di/dt conditions. Its R_DS(on) exhibits positive temperature coefficient and remains ≤80 mΩ up to T_j = 175 °C at V_GS = 4.5 V - critical for current-sharing stability in paralleled configurations.

Key Specifications

Pinout & Package

Supplied in PG-TO262-3-1 (SMD variant of TO-262), this device uses a 3-pin surface-mount package with isolated drain tab for PCB thermal management. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP70N10SL16AKSA1 and IPB70N10SL16AKSA1, IPI70N10SL16AKSA1 offers the best thermal interface for medium-power SMT designs - its TO262 footprint provides larger copper attachment area than TO263 while maintaining surface-mount compatibility, yielding 15% lower steady-state junction temperature at 50 A.

Availability

IPI70N10SL16AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for IPI70N10SL16AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the SIPMOS™ logic-level power MOSFET product line, engineered for high-current, high-reliability switching in industrial automation, renewable energy inverters, and EV charging infrastructure.

FAQ

What is the maximum safe gate-source voltage for IPI70N10SL16AKSA1?

The absolute maximum V_GS is ±20 V per datasheet specifications. Operation above ±15 V risks permanent gate oxide damage, while sustained bias below ±10 V is recommended for long-term reliability. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions.

Can IPI70N10SL16AKSA1 be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient ensures inherent current sharing. Layout must equalize gate loop inductance and source path impedance across all paralleled devices; use Kelvin source connections and matched gate resistors (≤1 Ω) to suppress oscillation and ensure simultaneous turn-on.

Does this MOSFET require a gate resistor, and what value is recommended?

A gate resistor is mandatory to dampen ringing and limit peak gate current. For typical 3.3 V/5 V MCU drivers, 4.7–10 Ω is recommended; for dedicated gate drivers delivering >2 A peak, 2.2–4.7 Ω balances switching speed and EMI. Values below 2.2 Ω increase risk of gate oscillation and driver overstress.

Is the drain tab electrically isolated in the PG-TO262-3-1 package?

No - the drain is internally connected to the exposed metal tab, which serves as the primary thermal path. This tab must be soldered to a large copper pour (≥6 cm²) tied to the system ground plane or isolated DC bus rail, depending on circuit topology. Electrical isolation requires insulating thermal pads or ceramic substrates.