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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI70N12S311AKSA1

Name: IPI70N12S311AKSA1
Brand: Infineon Technologies
SKU: IPI70N12S311AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI70N12S311AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI70N12S311AKSA1.pdf

Description:: MOSFET N-CHANNEL_100+

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI70N12S311AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 120 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 11.3 mΩ max R_DS(on) (SMD version), designed for high-efficiency automotive power switching in engine control units and DC-DC converters.

For engineers reviewing the IPI70N12S311AKSA1 datasheet, IPI70N12S311AKSA1 pinout, IPI70N12S311AKSA1 application, or IPI70N12S311AKSA1 equivalent, key selection criteria include avalanche ruggedness (410 mJ single-pulse), thermal resistance (R_thJC = 1.2 K/W), gate charge profile (Q_g = 51–65 nC), and 175 °C maximum junction temperature compliance.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The MOSFET features fully characterized dynamic parameters including C_iss (3350–4355 pF), C_oss (940–1222 pF), and t_r/t_f (8 ns each), enabling precise loss modeling in hard-switched and ZVS applications up to 100 kHz. Avalanche testing ensures reliable operation under inductive load turn-off stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Supports 12 V automotive battery systems with 4× safety margin against load-dump transients.
R_DS(on) max	11.3 mΩ (SMD version) - Enables <1 W conduction loss at 70 A, critical for thermally constrained ECU modules.
I_D continuous	70 A @ T_C = 25 °C - Sustains peak motor driver or solenoid currents without derating in forced-air-cooled enclosures.
E_AS	410 mJ - Guarantees single-pulse avalanche survival during inductive kickback in fuel injector drivers.
R_thJC	1.2 K/W - Allows direct heatsink mounting with predictable junction-to-case thermal path for thermal design.
Q_g	51–65 nC - Determines gate driver power requirement and switching speed trade-off in 20–100 kHz PWM stages.
T_j max	+175 °C - Meets under-hood ambient requirements for engine bay-mounted power stages.

Pinout & Package

Package: PG-TO262-3-1 (leadless variant of TO-262, surface-mount compatible with through-hole footprint). Three-terminal configuration with isolated drain tab for direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat dissipation node	Electrically connected to exposed copper pad; requires solder mask opening and thermal via array for R_thJA ≤ 40 K/W.
Source	Reference node for gate drive and current sensing	Low-inductance return path; used with shunt resistor for overcurrent protection in H-bridge legs.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD-requires RC snubber and gate resistor ≥3.5 Ω for dV/dt control.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability across -55 °C to +175 °C operating range and 1000-cycle temperature cycling.
100% avalanche tested	Each unit subjected to controlled single-pulse avalanche stress at I_AS = 70 A, ensuring consistent ruggedness without screening fallout.
Green product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU and JESD204B material declarations.
MSL1 rating	Reflow-compatible up to 260 °C peak, eliminating moisture sensitivity concerns during standard SMT assembly.
Optimized body diode	V_SD = 0.6–1.2 V @ 70 A enables efficient freewheeling with Q_rr = 265 nC and t_rr ≤ 100 ns for reduced switching loss.

Applications

Engine Control Unit (ECU) Power Stage

Fuel Injector Driver

Use Scenario: High-side switching of 12 V solenoid loads in gasoline/diesel engine management systems.

IC Role / Device Role / Timing Role: Main power switch controlling injection pulse width with µs-level turn-on/turn-off timing.

Use Value: 410 mJ avalanche energy prevents failure during inductive flyback, eliminating need for external clamping diodes.

Use Scenario: Low-side driver for multi-point sequential fuel injectors in turbocharged engines.

IC Role / Device Role / Timing Role: Fast-switching current sink with precise current regulation via source sensing.

Use Value: 11.3 mΩ R_DS(on) limits resistive heating to <0.5 W at 50 A, enabling compact PCB layout without active cooling.

Automotive DC-DC Converter

Electric Power Steering (EPS) Motor Driver

Use Scenario: Primary-side synchronous rectifier in 12 V to 5 V/3.3 V buck converters for ADAS camera modules.

IC Role / Device Role / Timing Role: High-frequency (100 kHz) switching element with low Q_g enabling efficient gate drive.

Use Value: C_iss/C_oss ratio supports zero-voltage switching transition, reducing EMI and improving efficiency >92%.

Use Scenario: Half-bridge leg in 12 V brushless DC motor controller for column-assist EPS systems.

IC Role / Device Role / Timing Role: Robust phase-leg switch handling bidirectional regenerative braking currents.

Use Value: 175 °C T_j max and 1.2 K/W R_thJC allow sustained 70 A operation in sealed EPS gear housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP70N12S3-11	Same die, PG-TO220-3-1 package - higher R_thJA (62 K/W), no SMD thermal pad.	Suitable for prototyping or low-volume through-hole assembly; not recommended for high-power density automotive modules.	Select only when manual soldering or legacy board compatibility is required.
IPB70N12S3-11	Same die, PG-TO263-3-2 package - enhanced thermal pad area, lower R_thJA (40 K/W with 6 cm² copper).	Better suited for production-grade SMD designs needing maximum thermal performance in space-constrained ECUs.	Prefer for new designs targeting highest power density and lowest junction temperature rise.

Compared with IPP70N12S3-11 and IPB70N12S3-11, IPI70N12S311AKSA1 offers balanced thermal performance (R_thJA = 62 K/W on minimal footprint, 40 K/W with 6 cm² copper) and mechanical compatibility with both through-hole and SMD reflow processes-ideal for scalable automotive production where footprint reuse across variants is critical.

Availability

IPI70N12S311AKSA1 is available at Aetrix Electronics and suitable for automotive engine control units, fuel injector drivers, and electric power steering motor controllers requiring stable component supply across extended vehicle lifecycles.

Supply support for IPI70N12S311AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T product line-engineered specifically for high-reliability 12 V automotive power switching, emphasizing avalanche ruggedness, thermal robustness, and AEC-Q101 compliance.

FAQ

What is the maximum gate-source voltage rating for IPI70N12S311AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 5.5 V gate plateau voltage confirmed by Q_g characterization curves. Gate driver circuits must include clamping (e.g., Zener diode) to prevent overshoot during fast switching.

Does IPI70N12S311AKSA1 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode with forward voltage V_SD = 0.6–1.2 V at 70 A and 25 °C, reverse recovery charge Q_rr = 265 nC, and recovery time t_rr ≤ 100 ns under specified test conditions (V_R = 60 V, I_F = 50 A, di/dt = 100 A/µs). This diode supports freewheeling but is not optimized for high-frequency synchronous rectification.

How does the thermal resistance R_thJC of 1.2 K/W translate to real-world heatsinking requirements?

With R_thJC = 1.2 K/W and maximum P_tot = 125 W at T_C = 25 °C, a 10 °C temperature rise across the case requires only ~8.3 W dissipation. For full 125 W operation, the heatsink must maintain T_C ≤ 25 °C-achievable using a 0.5 K/W heatsink with forced air, or 1.0 K/W with natural convection and large copper area per the 6 cm² PCB layout guideline.

Is IPI70N12S311AKSA1 suitable for use in life-support medical devices?

No. Infineon explicitly prohibits use in life-support devices or systems without express written approval, as stated in the legal disclaimer. This MOSFET is qualified for automotive applications per AEC-Q101, not ISO 13485 or IEC 62304 medical standards. Its failure mode and FIT rate are not validated for human-critical safety functions.

IPI70N12S311AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.6mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4355 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI70N12S311AKSA1 FAQ

1.How can I place an order for IPI70N12S311AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI70N12S311AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI70N12S311AKSA1 reliable?

The price and inventory of IPI70N12S311AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI70N12S311AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI70N12S311AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI70N12S311AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI70N12S311AKSA1?

IPI70N12S311AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI70N12S311AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI70N12S311AKSA1?

For technical support, including IPI70N12S311AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI70N12S311AKSA1 requirements.

6.How does Aetrix verify that IPI70N12S311AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI70N12S311AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI70N12S311AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI70N12S311AKSA1?

All IPI70N12S311AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI70N12S311AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI70N12S311AKSA1 part is unused and in its original packaging.

Return procedure for IPI70N12S311AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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