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Infineon Technologies IPI70N12S3L12AKSA1
- Part No.:
- IPI70N12S3L12AKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI70N12S3L12AKSA1.pdf
- Description:
- MOSFET N-CHANNEL_100+
- Quantity:
- Payment:
- Shipping:
Inventory:19,000
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Product details
Overview
IPI70N12S3L12AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 120 V VDS, 70 A continuous drain current at TC = 25 °C, and 11.8 mΩ max RDS(on) at VGS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested-designed for high-reliability automotive power switching in motor control and DC-DC converters.
For engineers reviewing the IPI70N12S3L12AKSA1 datasheet, IPI70N12S3L12AKSA1 pinout, IPI70N12S3L12AKSA1 application, or IPI70N12S3L12AKSA1 equivalent, key selection criteria include its 1.2 K/W RthJC, 9.8–11.8 mΩ RDS(on) (SMD version), 4270–5550 pF Ciss, and AEC-Q101 qualification for under-hood automotive use.
Technical Context
This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables robust drive with standard 3.3 V/5 V logic-level controllers, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.
The MOSFET features a fully characterized reverse recovery charge (Qrr = 185 nC) and fast trr (≤80 ns), enabling efficient operation in hard-switched and resonant converters. Thermal design is supported by MSL1 rating (260 °C peak reflow) and validated transient thermal impedance data for pulse-width-dependent SOA analysis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 120 V - supports 12 V automotive battery systems with ≥2× overvoltage margin against load-dump transients |
| RDS(on) max @ VGS=10 V | 11.8 mΩ - enables ≤8.2 W conduction loss at 70 A, critical for thermally constrained engine-control modules |
| ID continuous @ TC=25 °C | 70 A - delivers high-current capability in compact TO262 footprint without external heatsink in many applications |
| EAS single-pulse | 410 mJ - withstands inductive energy from solenoid or motor windings during fault conditions without failure |
| RthJC | 1.2 K/W - allows direct thermal path to PCB copper or heatsink, enabling precise junction temperature estimation |
| Qg total | 59–77 nC - determines gate driver power requirement and switching speed trade-off in 100–500 kHz converters |
| tr/tf | 5 ns / 5 ns - minimizes switching transition time, reducing overlap losses in high-frequency PWM stages |
Pinout & Package
Package: PG-TO262-3-1 (leadframe-based, surface-mount compatible variant of TO-262 with isolated drain tab). Thermally enhanced plastic housing with exposed drain pad for low-inductance, high-current PCB mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for channel current | Low-impedance connection point for source loop routing; ties directly to ground plane to minimize switching noise |
| Pin 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring <100 nA leakage; sensitive to ESD-requires series gate resistor and TVS protection |
| Pin 3 (Drain) | Main power output terminal | Exposed metal tab electrically connected to drain; must be soldered to large copper area for thermal and current handling |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST-required for engine control, transmission, and ADAS modules |
| 100% avalanche tested | Each unit subjected to single-pulse avalanche stress at IAS = 70 A, ensuring robustness against inductive kickback in motor drives |
| Green product (RoHS compliant) | Lead-free and halogen-free construction meets EU Directive 2011/65/EU and automotive ELV requirements |
| Optimized RDS(on) × Qg figure-of-merit | ~1.2 Ω·nC - balances low conduction loss and fast switching for high-efficiency 12 V buck converters |
| MSL1 reflow rating | Withstands peak solder temperatures up to 260 °C - compatible with standard lead-free SMT assembly processes |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-side switching of 12 V fuel injectors with 2–5 ms pulse width and 10 A peak current. IC Role / Device Role / Timing Role: Power switch controlling injector coil energization and de-energization timing with precise duty-cycle accuracy. Use Value: Low RDS(on) (11.8 mΩ) limits on-state heating; fast tf (5 ns) ensures clean turn-off to prevent post-injection dribble. | Use Scenario: Half-bridge PWM control of 12 V DC blower motor delivering 30–60 A continuous airflow in cabin climate systems. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectifier configuration, operating at 20–50 kHz with bidirectional current capability. Use Value: Integrated body diode with low VSD (0.6–1.2 V) and Qrr = 185 nC reduces freewheeling losses and EMI during commutation. |
| 12 V–48 V Automotive DC-DC Converter | Electric Power Steering (EPS) Phase Leg Switch |
Use Scenario: Primary-side synchronous rectifier in 12 V input, 5–15 V output buck converter powering ADAS cameras and radar modules. IC Role / Device Role / Timing Role: High-frequency (300–500 kHz) power switch managing energy transfer and regulation via PWM duty cycle. Use Value: Low Qg (59–77 nC) and Ciss (4270–5550 pF) enable efficient gate driving with minimal driver IC power consumption. | Use Scenario: Three-phase inverter leg switching in 12 V EPS system delivering torque assist up to 100 A peak per phase. IC Role / Device Role / Timing Role: High-current, high-reliability power switch in H-bridge topology, subject to frequent short-circuit and thermal cycling stress. Use Value: 175 °C max Tj rating and 1.2 K/W RthJC allow sustained operation under high ambient under-hood temperatures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP70N12S3L-12 | Same die, PG-TO220-3-1 package; higher RthJA (62 K/W vs. 40 K/W on PCB); no exposed drain pad | Better suited for through-hole prototyping or lower-power applications where thermal budget allows larger heatsink | Select when manual assembly, legacy board layout, or cost-sensitive non-SMD production is required |
| IPB70N12S3L-12 | Same die, PG-TO263-3-2 package; identical RDS(on) and SOA, but different pin pitch and thermal pad geometry | Preferred for high-density SMD designs requiring tighter layout spacing and dual-sided cooling | Select when PCB space is constrained and thermal interface to bottom-side copper is prioritized |
Compared with IPP70N12S3L-12 and IPB70N12S3L-12, the IPI70N12S3L12AKSA1 offers optimal thermal performance in mid-density SMD layouts-its PG-TO262-3-1 footprint provides mechanical stability and superior heat dissipation over TO220, while maintaining easier rework than TO263's tight pitch.
Availability
IPI70N12S3L12AKSA1 is available at Aetrix Electronics and suitable for automotive engine management, HVAC motor control, and EPS power conversion requiring stable component supply across extended vehicle lifecycles.
Supply support for IPI70N12S3L12AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.
This part belongs to the OptiMOS™-T family-engineered specifically for high-efficiency, high-reliability 12 V automotive power switching, emphasizing ruggedness, low RDS(on), and AEC-Q101 compliance.
FAQ
What is the maximum allowable gate-source voltage for IPI70N12S3L12AKSA1?
The absolute maximum VGS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to 10–15 V for full enhancement, with transient spikes clamped using Zener diodes or active gate drivers. The gate threshold voltage range (1.2–2.4 V) ensures compatibility with both 3.3 V and 5 V logic-level controllers without level-shifting.
Does IPI70N12S3L12AKSA1 require a gate resistor, and what value is recommended?
Yes-a series gate resistor is essential to dampen ringing, limit peak gate current, and control dV/dt. For typical 12 V automotive switching at 100–500 kHz, a 5–15 Ω resistor is recommended. Lower values (5–8 Ω) improve switching speed but increase EMI risk; higher values (10–15 Ω) reduce overshoot and oscillation at the expense of increased switching losses. Layout parasitics must also be minimized to avoid unintended LC resonance.
How does the body diode performance impact its use in synchronous rectification?
The integrated body diode has VSD = 0.6–1.2 V at 70 A and Qrr = 185 nC, enabling efficient freewheeling in half-bridge configurations. Its fast trr (≤80 ns) minimizes reverse recovery losses and associated voltage spikes. However, for highest efficiency above 100 kHz, external Schottky diodes may still be preferred due to lower forward drop and near-zero Qrr.
Can IPI70N12S3L12AKSA1 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (increasing with junction temperature) enables inherent current sharing when paralleled. To ensure balanced operation, matched gate drive paths, symmetrical PCB layout, and individual gate resistors (5–10 Ω) are required. Thermal coupling between devices must be minimized, and derating to ≤60 A per device is advised for sustained parallel operation at elevated ambient temperatures.
IPI70N12S3L12AKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ T
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 120 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12.1mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5550 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3-1
IPI70N12S3L12AKSA1 FAQ
1.How can I place an order for IPI70N12S3L12AKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI70N12S3L12AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI70N12S3L12AKSA1 reliable?
The price and inventory of IPI70N12S3L12AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI70N12S3L12AKSA1 is usually 5 days.
3.What payment methods are accepted for IPI70N12S3L12AKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI70N12S3L12AKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI70N12S3L12AKSA1?
IPI70N12S3L12AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI70N12S3L12AKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI70N12S3L12AKSA1?
For technical support, including IPI70N12S3L12AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI70N12S3L12AKSA1 requirements.
6.How does Aetrix verify that IPI70N12S3L12AKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI70N12S3L12AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI70N12S3L12AKSA1 meets industry standards.
7.What is the process for return or replacement of IPI70N12S3L12AKSA1?
All IPI70N12S3L12AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI70N12S3L12AKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI70N12S3L12AKSA1 part is unused and in its original packaging.
Return procedure for IPI70N12S3L12AKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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