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Infineon Technologies IPI80CN10N G
- Part No.:
- IPI80CN10N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI80CN10N G.pdf
- Description:
- MOSFET N-CH 100V 13A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,348
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Product details
Overview
IPI80CN10N G from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO262-3 package, rated for 100 V VDS, 13 A continuous drain current at TC = 25 °C, and maximum RDS(on) of 80 mΩ at VGS = 10 V and ID = 13 A. It operates up to 175 °C junction temperature and is optimized for high-frequency switching in DC-DC converters and synchronous rectification in server/industrial SMPS.
For engineers reviewing the IPI80CN10N G datasheet, IPI80CN10N G pinout, IPI80CN10N G application, or IPI80CN10N G equivalent, key selection criteria include its 80 mΩ RDS(on) at 10 V gate drive, 538–716 pF input capacitance, 13 ns typical turn-on delay, 67 ns reverse recovery time, and thermal resistance RthJC of 4.9 K/W - all critical for thermal-aware high-efficiency power stage design.
Technical Context
This MOSFET employs trench-based OptiMOS®2 technology to achieve low gate charge × RDS(on) figure-of-merit (FOM), enabling fast switching with reduced conduction and switching losses. Its 100 V breakdown voltage and 175 °C rated junction temperature support robust operation in industrial 48 V bus and telecom rectifier applications.
The device integrates a monolithic body diode with 114 nC reverse recovery charge (Qrr) and 67 ns trr, supporting synchronous rectification without external Schottky replacement in medium-power isolated flyback and LLC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V input systems with ≥2× voltage margin against transients |
| RDS(on), max | 80 mΩ at VGS = 10 V, ID = 13 A - enables <1.0 W conduction loss at full load in 12 V output stages |
| ID, cont. | 13 A at TC = 25 °C - suitable for 150–200 W power stages with adequate heatsinking |
| Qg, total | 8–11 nC - allows efficient gate driving with standard 1 A peak drivers at >300 kHz |
| tr / tf | 4–6 ns / 3–4 ns - minimizes switching transition losses in hard-switched topologies |
| Qrr | 114 nC - defines recoverable energy loss during diode commutation in synchronous rectifiers |
| RthJC | 4.9 K/W - enables direct thermal path to heatsink; requires <10 °C/W system thermal resistance for 175 °C Tj limit |
Pinout & Package
Package: PG-TO262-3 (straight-lead variant of TO-220 compatible outline, surface-mount capable with through-hole mounting option). Pin assignment confirmed per Infineon PG-TO262-3 mechanical drawing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path collector | Electrically and thermally connected to exposed metal tab - must be soldered to PCB copper pour or heatsink |
| Source | Reference node for gate control and current return | Low-inductance connection required to minimize shoot-through risk in half-bridge configurations |
| Gate | Control terminal for channel modulation | High-impedance input requiring RC snubber or gate resistor ≥2.4 Ω to damp ringing per datasheet test condition |
Key Features
| Feature | Design Value |
|---|---|
| N-channel normal-level logic | Threshold voltage 2–4 V enables direct drive from 3.3 V or 5 V controllers without level-shifting |
| Optimized FOM (Qg × RDS(on)) | ~640–880 pC·Ω - balances switching speed and conduction loss for 200–500 kHz operation |
| 175 °C rated junction temperature | Enables derating-free operation in sealed enclosures or high-ambient environments (e.g., base station power supplies) |
| JEDEC-qualified reliability | Qualified per J-STD-20 and JESD22 for industrial and telecom applications - no accelerated life testing waivers |
| Pb-free & RoHS compliant | Lead plating meets EU RoHS Directive 2011/65/EU - compatible with lead-free reflow profiles (peak 260 °C) |
Applications
| Server VRM Output Stage | Industrial 48 V DC-DC Converter |
|---|---|
Use Scenario: High-current, high-efficiency buck converter delivering 12 V/15 A to CPU core logic. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase VRM, switching at 300–500 kHz. Use Value: 80 mΩ RDS(on) reduces conduction loss by ~25% vs. legacy 100 mΩ devices; 114 nC Qrr ensures predictable body diode commutation timing. | Use Scenario: Isolated forward converter in programmable logic controller (PLC) power module. IC Role / Device Role / Timing Role: Primary-side switch operating at 200 kHz with 50% duty cycle under 48 V input. Use Value: 100 V VDS rating provides 2× margin over 48 V bus; 4.9 K/W RthJC enables compact heatsink integration in DIN-rail mounted enclosure. |
| Telecom Rectifier Module | Motor Drive Half-Bridge Leg |
Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier with 24 V output. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in center-tapped transformer configuration. Use Value: 67 ns trr and low Qrr reduce voltage overshoot during diode turn-off, improving EMI and efficiency above 92%. | Use Scenario: Low-side switch in 24 V BLDC motor gate driver stage for HVAC fan control. IC Role / Device Role / Timing Role: PWM-controlled power switch in half-bridge topology, operating at 15–25 kHz. Use Value: 13 A continuous rating supports 300 W mechanical output; 175 °C Tjmax accommodates ambient temperatures up to 85 °C in enclosed motor housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP80CN10N G | Same die, PG-TO220-3 package; RthJC = 4.9 K/W identical, but higher RthJA due to different mounting | Better suited for through-hole prototyping or legacy board designs with TO-220 footprints | Select when mechanical compatibility with TO-220 sockets or manual assembly is required |
| IPB79CN10N G | Same OptiMOS®2 die in PG-TO263-3; RDS(on) max = 79 mΩ, slightly lower than IPI80CN10N G's 80 mΩ | Preferred for automated SMT lines where thermal pad soldering is fully controlled and board space permits D²PAK footprint | Choose for highest efficiency in volume SMT production with validated reflow profile |
Compared with IPP80CN10N G and IPB79CN10N G, IPI80CN10N G offers identical electrical performance in a PG-TO262-3 package - providing TO-220 mechanical familiarity with straight-lead SMT compatibility, ideal for hybrid assembly or upgrade paths from legacy TO-220 designs.
Availability
IPI80CN10N G is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.
Supply support for IPI80CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
IPI80CN10N G belongs to the OptiMOS®2 Power-Transistor product line, designed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial SMPS applications.
FAQ
What is the maximum gate-source voltage rating for IPI80CN10N G?
The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Exceeding this value risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable switching; gate drive circuits must include clamping or Zener protection to prevent transient overshoot beyond ±20 V.
Does IPI80CN10N G have avalanche capability, and how is it rated?
Yes - IPI80CN10N G is rated for single-pulse avalanche energy EAS = 17 mJ at ID = 13 A and RGS = 25 Ω. This rating applies only to non-repetitive, short-duration events (e.g., inductive load switching); it does not imply repetitive avalanche operation capability. Designers must ensure SOA compliance and avoid repeated avalanche stress.
Can IPI80CN10N G be used in linear (analog) mode operation?
No - IPI80CN10N G is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability: at VDS = 20 V and TC = 25 °C, maximum continuous current is ~4 A, dropping sharply with increasing VDS or temperature. Linear use risks thermal runaway and is not supported by qualification or characterization data.
What is the recommended PCB layout for thermal management of IPI80CN10N G?
Infineon specifies a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area (70 μm thick, single layer) connected to the drain tab. The copper must be directly soldered to the exposed tab; thermal vias under the tab are strongly recommended. Minimum trace width for source and gate connections is 0.5 mm to limit inductance and resistive loss in high-di/dt applications.
IPI80CN10N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 716 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 31W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI80CN10N G FAQ
1.How can I place an order for IPI80CN10N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI80CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI80CN10N G reliable?
The price and inventory of IPI80CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80CN10N G is usually 5 days.
3.What payment methods are accepted for IPI80CN10N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80CN10N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI80CN10N G?
IPI80CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI80CN10N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI80CN10N G?
For technical support, including IPI80CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80CN10N G requirements.
6.How does Aetrix verify that IPI80CN10N G is sourced from the original manufacturer or authorized distributors?
All IPI80CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80CN10N G meets industry standards.
7.What is the process for return or replacement of IPI80CN10N G?
All IPI80CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPI80CN10N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI80CN10N G part is unused and in its original packaging.
Return procedure for IPI80CN10N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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