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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N03S4L03AKSA1

Name: IPI80N03S4L03AKSA1
Brand: Infineon Technologies
SKU: IPI80N03S4L03AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI80N03S4L03AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N03S4L03AKSA1.pdf

Description:: MOSFET N-CH 30V 80A TO262-3

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Inventory:4,239

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Product details

Overview

IPI80N03S4L03AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 30 V V_DS, 2.4 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature. It delivers ultra-low conduction loss and 100% avalanche-tested ruggedness for high-current automotive DC-DC converters and motor control stages.

For engineers reviewing the IPI80N03S4L03AKSA1 datasheet, IPI80N03S4L03AKSA1 pinout, IPI80N03S4L03AKSA1 application, or IPI80N03S4L03AKSA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, thermal resistance R_thJC = 1.1 K/W, avalanche energy E_AS = 260 mJ, and AEC-Q101 qualification status for under-hood use.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining fast switching (t_r = 9 ns, t_f = 13 ns) and low gate charge (Q_g = 110–140 nC). Its 1.1 K/W junction-to-case thermal resistance enables high-power operation without forced cooling in constrained automotive environments.

The integrated body diode exhibits low forward voltage (V_SD = 0.6–1.3 V at I_F = 80 A) and controlled reverse recovery (Q_rr = 100 nC, t_rr = 120 ns), supporting synchronous rectification and freewheeling in bidirectional power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems
R_DS(on) max @ V_GS = 10 V	2.4 mΩ - Enables ≤1.92 W conduction loss at 80 A continuous current
I_D continuous @ T_C = 100 °C	80 A - Sustains full-rated current in engine bay ambient up to 100 °C case temperature
E_AS single-pulse	260 mJ - Withstands inductive turn-off energy without failure in motor drive snubbers
R_thJC	1.1 K/W - Allows direct heatsink mounting for efficient thermal path to chassis
Q_g total	110–140 nC - Determines gate driver power requirement for <100 ns switching transitions
V_GS(th)	1.0–2.2 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers

Pinout & Package

Supplied in PG-TO262-3-1 (IPAK) package with isolated tab, featuring three terminals: Drain (Tab), Source (Pin 1), and Gate (Pin 2). The metal tab is electrically connected to the Drain and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current-carrying terminal and thermal path	Must be mounted to heatsink with electrically insulating but thermally conductive interface
Pin 1 (Source)	Reference node for gate drive and current return	Low-inductance connection required to minimize switching oscillation and ground bounce
Pin 2 (Gate)	Control input for channel modulation	Requires series gate resistor (typically 3.5 Ω) to damp ringing and control dV/dt

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control and transmission modules
100% unclamped inductive switching (UIS) tested	Guarantees robustness against inductive load transients without external clamping
Ultra-low R_DS(on) at 4.5 V drive	2.5–2.9 mΩ typical - supports direct drive from microcontroller GPIOs in space-constrained ECUs
Green product (RoHS compliant)	Lead-free termination and halogen-free molding compound meet EU ELV and REACH requirements
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free PCB assembly processes without moisture sensitivity concerns

Applications

Automotive Motor Control

DC-DC Converter Primary Switch

Use Scenario: High-side switch in 12 V BLDC fan or pump controller with PWM frequency ≥20 kHz.

IC Role / Device Role / Timing Role: Main power switch handling continuous 80 A phase current and repetitive 320 A pulsed loads during stall conditions.

Use Value: Low R_DS(on) reduces conduction loss by >35% vs. legacy 3.5 mΩ MOSFETs, enabling passive cooling in compact ECU housings.

Use Scenario: Primary-side switch in 48 V–12 V buck converter for ADAS domain controller power supply.

IC Role / Device Role / Timing Role: High-frequency (250 kHz) hard-switched transistor with controlled dV/dt to limit EMI in safety-critical subsystems.

Use Value: Optimized C_iss/C_oss ratio (7500 pF / 1900 pF) minimizes switching loss while maintaining stable zero-voltage transition margin.

Automotive Lighting Driver

Start-Stop Battery Management

Use Scenario: High-current LED headlamp dimming stage with analog and PWM control.

IC Role / Device Role / Timing Role: Linear and switching regulator pass element delivering precise 0–80 A current control with thermal foldback.

Use Value: 175 °C max T_j and 1.1 K/W R_thJC allow sustained operation at 75 °C ambient with no derating in sealed lamp housings.

Use Scenario: Load dump protection and bidirectional current control in 12 V start-stop battery interface.

IC Role / Device Role / Timing Role: Reverse polarity and overcurrent protection switch with integrated freewheeling diode for regenerative braking energy routing.

Use Value: Low V_SD (0.6–0.9 V) and fast t_rr (120 ns) reduce freewheeling loss by 22% versus standard silicon diodes in 10 kHz switching cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N03S4L-02	Same die, PG-TO263-3-2 package; R_DS(on) max = 2.2 mΩ at V_GS = 10 V	Better thermal performance on PCB due to exposed drain pad; requires surface-mount layout	Select when board-level thermal management via copper pour is preferred over discrete heatsinking
IPP80N03S4L-03	Same die, PG-TO220-3-1 package; R_DS(on) max = 2.4 mΩ at V_GS = 10 V; higher R_thJC = 1.3 K/W	Lower-cost through-hole mounting; reduced power density due to larger footprint and lower thermal efficiency	Select for cost-sensitive industrial controls where manual assembly and legacy TO-220 heatsinks are used

Compared with IPB80N03S4L-02 and IPP80N03S4L-03, IPI80N03S4L03AKSA1 offers identical electrical performance in a mid-profile through-hole package (PG-TO262) that balances mechanical robustness, thermal capability (R_thJC = 1.1 K/W), and automated assembly compatibility-ideal for automotive ECU production lines requiring both reliability and process flexibility.

Availability

IPI80N03S4L03AKSA1 is available at Aetrix Electronics and suitable for automotive motor control, DC-DC conversion, lighting drivers, and start-stop battery management requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IPI80N03S4L03AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability automotive power conversion and motor drive applications demanding AEC-Q101 compliance and rugged transient performance.

FAQ

What is the maximum allowable gate-source voltage for IPI80N03S4L03AKSA1?

The absolute maximum V_GS is ±16 V per datasheet specifications. Operation beyond ±12 V is not recommended for long-term reliability, and gate drive circuits must include clamping (e.g., Zener diode) to prevent overshoot during fast switching. Transient spikes exceeding ±16 V-even for nanoseconds-risk irreversible gate oxide damage.

Does IPI80N03S4L03AKSA1 support logic-level gate drive?

Yes-it has a low gate threshold voltage range of 1.0–2.2 V and delivers R_DS(on) ≤ 2.9 mΩ at V_GS = 4.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting. However, full 80 A current capability requires V_GS ≥ 10 V to ensure minimal on-resistance and thermal stability under load.

How is avalanche ruggedness verified for this MOSFET?

Each unit undergoes 100% unclamped inductive switching (UIS) testing at I_D = 80 A, resulting in E_AS = 260 mJ. Test conditions replicate worst-case inductive turn-off events in automotive motor drives, with junction temperature monitored to ensure no parametric shift or catastrophic failure occurs after stress.

Can the drain tab be electrically insulated during heatsink mounting?

Yes-the drain tab must be electrically isolated from the heatsink using a thermally conductive but electrically insulating pad (e.g., silicone-based ceramic-filled film). The PG-TO262-3-1 package does not integrate internal isolation; improper insulation risks short-circuiting the drain to system ground and damaging downstream circuitry.

IPI80N03S4L03AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 9750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI80N03S4L03AKSA1 FAQ

1.How can I place an order for IPI80N03S4L03AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N03S4L03AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N03S4L03AKSA1 reliable?

The price and inventory of IPI80N03S4L03AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N03S4L03AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI80N03S4L03AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N03S4L03AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N03S4L03AKSA1?

IPI80N03S4L03AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N03S4L03AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N03S4L03AKSA1?

For technical support, including IPI80N03S4L03AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N03S4L03AKSA1 requirements.

6.How does Aetrix verify that IPI80N03S4L03AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80N03S4L03AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N03S4L03AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80N03S4L03AKSA1?

All IPI80N03S4L03AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N03S4L03AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N03S4L03AKSA1 part is unused and in its original packaging.

Return procedure for IPI80N03S4L03AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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