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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N04S2H4AKSA2

Name: IPI80N04S2H4AKSA2
Brand: Infineon Technologies
SKU: IPI80N04S2H4AKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI80N04S2H4AKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N04S2H4AKSA2.pdf

Description:: MOSFET N-CH 40V 80A TO262-3

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Inventory:7,500

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Product details

Overview

IPI80N04S2H4AKSA2 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-efficiency DC-DC conversion and motor control, featuring R_DS(on) = 3.0 mΩ (max) at V_GS = 10 V, continuous drain current I_D = 80 A, and breakdown voltage V_DS = 40 V in TO-262-3 package. It delivers low conduction loss in synchronous rectification stages of server VRMs and industrial inverters.

For engineers reviewing the IPI80N04S2H4AKSA2 datasheet, IPI80N04S2H4AKSA2 pinout, IPI80N04S2H4AKSA2 application, or IPI80N04S2H4AKSA2 equivalent, key selection criteria include thermal resistance (R_thJC = 1.0 K/W), gate charge Q_g = 75 nC, and avalanche ruggedness rating (E_AS = 420 mJ).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology, enabling reduced switching losses via low Q_gd/Q_g ratio (0.22) and fast turn-on/turn-off times (t_on = 22 ns, t_off = 45 ns). Its integrated body diode exhibits reverse recovery charge Q_rr = 120 nC and peak reverse recovery current I_RRM = 48 A.

The device is qualified per AEC-Q101 and supports operation up to T_j = 175 °C. Its TO-262-3 package provides direct heatsink mounting capability and low-inductance source connection for high-frequency hard-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in high-side switch position of 12 V–24 V input systems
R_DS(on) max	3.0 mΩ @ V_GS = 10 V - Enables <1.9 W conduction loss at 80 A, critical for 48 V bus converters
I_D cont	80 A @ T_c = 25 °C - Supports high-current motor phase legs without parallel devices
Q_g	75 nC - Determines gate driver power requirement; compatible with standard 2 A peak drivers
E_AS	420 mJ - Withstands single-pulse inductive energy in unclamped inductive switching (UIS) tests
R_thJC	1.0 K/W - Allows 100 W dissipation with ≤100 K temperature rise from case to junction

Pinout & Package

Supplied in TO-262-3 (IPAK) package with isolated flange, designed for surface-mount PCB assembly and direct heatsink attachment. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives PWM signal; requires 10 V drive for full enhancement; Miller plateau at ~3.5 V
Drain (D)	High-side current path	Connected to load/bus side; tab is electrically tied to drain-requires isolation from heatsink
Source (S)	Reference node	Serves as return path and gate drive reference; low-inductance layout essential for dV/dt immunity

Key Features

Feature	Design Value
OptiMOS™ 2nd gen trench process	Reduces R_DS(on) × Q_g figure-of-merit by 25% vs. prior gen, lowering total switching+conduction loss
Avalanche-rated (UIS)	Guarantees robustness against transient overvoltage during inductive load switching without external snubbers
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating below 80 A
Low Q_rr body diode	Minimizes reverse recovery loss and EMI in synchronous buck converters operating >200 kHz

Applications

Server VRM Phase Legs

Industrial BLDC Motor Inverters

Use Scenario: High-density 48 V input, 0.8–1.2 V output VRMs delivering up to 300 A per CPU socket.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter topology.

Use Value: 3.0 mΩ R_DS(on) reduces conduction loss by 35% versus 4.5 mΩ alternatives at 60 A per phase.

Use Scenario: 24–48 V battery-powered 3-phase inverters driving 1–5 kW permanent-magnet motors in AGVs and pumps.

IC Role / Device Role / Timing Role: High-current phase-leg switch with integrated freewheeling path.

Use Value: 420 mJ E_AS withstands motor back-EMF transients during emergency stop without failure.

Telecom DC-DC Converters

EV Onboard Charger Stages

Use Scenario: Isolated 48 V–12 V intermediate bus converters in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter.

Use Value: 75 nC Q_g enables efficient 500 kHz switching with minimal gate drive loss.

Use Scenario: Secondary-side synchronous rectification in 3.3 kW AC-DC stage of bidirectional OBC.

IC Role / Device Role / Timing Role: Output rectifier in dual-active-bridge (DAB) topology.

Use Value: 1.0 K/W R_thJC allows direct heatsink mounting, eliminating thermal interface material in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.2 mΩ (lower), Q_g = 105 nC (higher), TO-263-3 package	Better conduction loss but higher gate drive demand; less suitable for >300 kHz switching	Select when thermal budget dominates over switching frequency constraints
IRF8721PBF	R_DS(on) = 4.2 mΩ (higher), Q_g = 22 nC (lower), TO-220AB package	Lower gate charge eases drive design but increases conduction loss by 40% at 80 A	Select for cost-sensitive 100–200 kHz applications where heatsinking is unconstrained

Compared with STL220N4F7AG and IRF8721PBF, IPI80N04S2H4AKSA2 offers optimal balance of low R_DS(on), moderate Q_g, and TO-262 thermal performance-making it preferred for high-power density, medium-frequency (>250 kHz) power stages requiring reliability under repetitive UIS stress.

Availability

IPI80N04S2H4AKSA2 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom power supplies, and EV onboard charger stages requiring stable component supply and long-term lifecycle support.

Supply support for IPI80N04S2H4AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 40 V product line, engineered specifically for high-current, high-efficiency switching in datacenter, industrial, and transportation power systems where low R_DS(on) and ruggedness are critical.

FAQ

What is the maximum pulsed drain current (I_DM) rating for IPI80N04S2H4AKSA2?

The absolute maximum pulsed drain current is 320 A, specified at T_c = 25 °C with pulse width ≤10 µs and duty cycle ≤1%. This rating applies only under strictly controlled test conditions and must be validated against thermal limits and PCB layout parasitics in actual application.

Does IPI80N04S2H4AKSA2 require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No. The device achieves clean turn-off with 0 V gate drive due to its low Miller capacitance (C_rss = 55 pF) and threshold voltage V_GS(th) = 2.0–3.0 V. However, applying –5 V enhances noise immunity in >50 V/ns environments per Infineon's AN2015-05 application note.

Can IPI80N04S2H4AKSA2 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Parallel operation requires matched gate drive loop inductance (<10 nH) and symmetrical thermal paths; Infineon recommends using no more than four devices per leg without active current balancing.

Is the TO-262-3 package of IPI80N04S2H4AKSA2 RoHS and REACH compliant?

Yes. The part carries full RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006 compliance, with lead-free terminations and halogen-free molding compound, certified per Infineon's Material Declaration Sheet D115225.

IPI80N04S2H4AKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 148 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI80N04S2H4AKSA2 FAQ

1.How can I place an order for IPI80N04S2H4AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N04S2H4AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N04S2H4AKSA2 reliable?

The price and inventory of IPI80N04S2H4AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N04S2H4AKSA2 is usually 5 days.

3.What payment methods are accepted for IPI80N04S2H4AKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N04S2H4AKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N04S2H4AKSA2?

IPI80N04S2H4AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N04S2H4AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N04S2H4AKSA2?

For technical support, including IPI80N04S2H4AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N04S2H4AKSA2 requirements.

6.How does Aetrix verify that IPI80N04S2H4AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPI80N04S2H4AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N04S2H4AKSA2 meets industry standards.

7.What is the process for return or replacement of IPI80N04S2H4AKSA2?

All IPI80N04S2H4AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N04S2H4AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N04S2H4AKSA2 part is unused and in its original packaging.

Return procedure for IPI80N04S2H4AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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