Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPI80N04S3-06

Part No.:
IPI80N04S3-06
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixIPI80N04S3-06.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPI80N04S3-06 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO262-3-1 package, rated for 40 V VDS, 80 A continuous drain current at TC = 25 °C, and 5.4 mΩ max RDS(on) (SMD version), with AEC-Q101 qualification and 175 °C maximum junction temperature. It serves as a high-current switching element in DC-DC converters and motor control stages of automotive body electronics.

For engineers reviewing the IPI80N04S3-06 datasheet, IPI80N04S3-06 pinout, IPI80N04S3-06 application, or IPI80N04S3-06 equivalent, key selection criteria include its 1.5 K/W thermal resistance (junction-to-case), 100% avalanche-tested ruggedness, gate plateau voltage of 6.0 V, and compatibility with standard 10 V gate drive in high-efficiency 12 V automotive systems.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in unidirectional high-current switching. Its dynamic parameters-3250 pF Ciss, 860 pF Coss, and 130 pF Crss-support fast turn-on/turn-off with 15 ns td(on) and 20 ns td(off) under RG = 6 Ω.

The integrated body diode delivers 80 A continuous forward current with 1.3 V VSD at 80 A and 25 °C, and exhibits 34 ns trr and 36 nC Qrr, enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 12 V automotive battery systems with transient margin.
RDS(on) max5.4 mΩ - Confirmed for SMD version at VGS = 10 V, ID = 80 A; enables <1 W conduction loss at 80 A.
ID continuous80 A at TC = 25 °C - Limited by bondwire; derates to 71 A at TC = 100 °C per thermal constraint.
EAS125 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients.
RthJC1.5 K/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power dissipation.
Qg total47 nC max - Total gate charge determines driver strength requirement; supports 100 kHz+ switching with moderate gate drivers.

Pinout & Package

Package: PG-TO262-3-1 (leadless variant of TO-262, 3-pin, surface-mount compatible with through-hole footprint). Exposed drain pad on underside for thermal conduction.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or current-sense resistor; electrically tied to tab in some variants but isolated here.
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring 6.0 V plateau voltage; sensitive to ESD; routed with controlled impedance.
Pin 3 (Drain)Power outputExposed copper pad on package underside; primary thermal path to heatsink; carries full load current.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control, lighting, and ADAS power stages.
100% avalanche testedEach unit withstands single-pulse inductive energy up to 125 mJ without failure.
Green RoHS-compliant packageHalogen-free, lead-free construction meeting automotive environmental compliance requirements.
175 °C operating temperatureEnables placement near heat sources (e.g., inverters, DC-DC modules) without derating penalties.

Applications

Automotive Body Control Module (BCM)12 V DC-DC Buck Converter

Use Scenario: Switching high-current loads such as headlamps, seat heaters, and window lift motors in centralized BCM units.

IC Role / Device Role / Timing Role: Low-side power switch controlling load activation via PWM or on/off logic signals.

Use Value: 5.4 mΩ RDS(on) minimizes resistive heating during sustained 60–80 A operation, reducing thermal design burden.

Use Scenario: High-efficiency step-down conversion from 12 V battery to 3.3 V/5 V rails for infotainment and cluster microcontrollers.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter secondary side, replacing Schottky diode.

Use Value: Integrated body diode with 34 ns trr and 36 nC Qrr enables zero-voltage switching and reduces reverse recovery losses.

Electric Power Steering (EPS) Motor DriverAutomotive HVAC Blower Control

Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS assist motor.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element in low-side position with fast 10 ns rise/fall times.

Use Value: 1.5 K/W RthJC allows direct heatsink attachment, sustaining 71 A at 100 °C case temperature in compact EPS enclosures.

Use Scenario: PWM-controlled blower motor driver in climate control systems with variable speed demand.

IC Role / Device Role / Timing Role: Unidirectional power switch modulating motor voltage via duty-cycle control.

Use Value: 175 °C Tj rating permits operation in hot under-dash environments without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N04S3-06PG-TO263-3-2 package; identical electrical specs; 1.5 K/W RthJC; same marking "3N0406"Suitable for surface-mount PCBs with larger thermal pad area; requires different footprint.Select when board layout prioritizes SMD assembly and enhanced thermal spreading over leaded mounting.
IPP80N04S3-06PG-TO220-3-1 package; identical electrical specs; higher RthJA (62 K/W); same marking "3N0406"Better suited for prototyping, manual assembly, or legacy through-hole designs with heatsink clips.Select when mechanical mounting flexibility and serviceability outweigh thermal performance optimization.

Compared with IPB80N04S3-06 and IPP80N04S3-06, the IPI80N04S3-06 offers identical silicon performance in a PG-TO262-3-1 package-balancing SMD manufacturability with through-hole footprint compatibility and lower profile than TO-220, making it optimal for space-constrained automotive modules requiring automated assembly.

Availability

IPI80N04S3-06 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering systems requiring stable component supply across extended production lifecycles.

Supply support for IPI80N04S3-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-current, high-temperature automotive power switching applications where reliability, avalanche ruggedness, and thermal efficiency are critical.

FAQ

What is the maximum gate-source voltage rating for IPI80N04S3-06?

The absolute maximum gate-source voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –20 V may cause threshold shift. Recommended drive range is 0 V to 10 V for reliable enhancement-mode switching with 6.0 V gate plateau voltage.

Is IPI80N04S3-06 suitable for synchronous rectification in a 12 V buck converter?

Yes. Its integrated body diode has 1.3 V forward voltage at 80 A and 25 °C, 34 ns reverse recovery time, and 36 nC reverse recovery charge-enabling efficient synchronous rectification when paired with complementary high-side control, reducing conduction losses versus Schottky solutions.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is required to control dV/dt and prevent oscillation. With 47 nC total gate charge and typical driver output impedance, a 6 Ω resistor achieves measured 15 ns turn-on delay and 20 ns turn-off delay-matching recommended test conditions in the datasheet and ensuring EMI control and shoot-through immunity.

How does the PG-TO262-3-1 package differ thermally from PG-TO220-3-1?

Both packages share identical 1.5 K/W RthJC, but PG-TO262-3-1 offers lower profile and surface-mount compatibility while maintaining through-hole footprint alignment. Its exposed drain pad provides equivalent thermal conduction to heatsinks as TO-220, unlike TO-263 which requires larger PCB copper area for optimal RthJA.

IPI80N04S3-06 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IPI80N04S3-06 FAQ

1.How can I place an order for IPI80N04S3-06 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N04S3-06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N04S3-06 reliable?

The price and inventory of IPI80N04S3-06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N04S3-06 is usually 5 days.

3.What payment methods are accepted for IPI80N04S3-06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N04S3-06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N04S3-06?

IPI80N04S3-06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N04S3-06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N04S3-06?

For technical support, including IPI80N04S3-06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N04S3-06 requirements.

6.How does Aetrix verify that IPI80N04S3-06 is sourced from the original manufacturer or authorized distributors?

All IPI80N04S3-06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N04S3-06 meets industry standards.

7.What is the process for return or replacement of IPI80N04S3-06?

All IPI80N04S3-06 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N04S3-06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N04S3-06 part is unused and in its original packaging.

Return procedure for IPI80N04S3-06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI80N04S3-06 Tags

  • IPI80N04S3-06
  • IPI80N04S3-06 PDF
  • IPI80N04S3-06 Datasheet
  • IPI80N04S3-06 Specifications
  • IPI80N04S3-06 Images
  • Infineon Technologies
  • Infineon Technologies IPI80N04S3-06
  • Buy IPI80N04S3-06
  • IPI80N04S3-06 Price
  • IPI80N04S3-06 Distributor
  • IPI80N04S3-06 Supplier
  • IPI80N04S3-06 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER