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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N04S306AKSA1

Name: IPI80N04S306AKSA1
Brand: Infineon Technologies
SKU: IPI80N04S306AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI80N04S306AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N04S306AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO262-3

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Product details

Overview

IPI80N04S306AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 40 V V_DS, 5.4 mΩ max R_DS(on) at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It delivers high-current switching in automotive body control modules, DC-DC converters, and motor drivers with 100% avalanche energy rating (125 mJ) and 175 °C operating junction temperature.

For engineers reviewing the IPI80N04S306AKSA1 datasheet, IPI80N04S306AKSA1 pinout, IPI80N04S306AKSA1 application, or IPI80N04S306AKSA1 equivalent, key selection criteria include its 40 V breakdown voltage, low 4.3–5.4 mΩ on-resistance (SMD version), 1.5 K/W junction-to-case thermal resistance, AEC-Q101 qualification, and integrated body diode with 34 ns reverse recovery time.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 36–47 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The MOSFET integrates a fast-recovery body diode (t_rr = 34 ns, Q_rr = 36 nC) and is characterized for stable performance across -55 °C to +175 °C ambient, with MSL1 reflow capability up to 260 °C. Thermal design is supported by validated R_thJC = 1.5 K/W and PCB-cooled R_thJA = 40 K/W (6 cm² copper).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V battery rail applications with margin against load dump transients
R_DS(on) max	5.4 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for high-efficiency power stages
I_D cont	80 A @ T_C = 25 °C - Supports high-current loads such as HVAC blowers and seat motors without external heatsink
E_AS	125 mJ - Fully tested single-pulse avalanche energy ensures ruggedness during inductive turn-off events
Q_g	36–47 nC - Determines gate driver power requirement and switching speed trade-off in hard-switched topologies
t_rr	34 ns - Limits reverse recovery losses and EMI in synchronous rectification and half-bridge configurations
R_thJC	1.5 K/W - Enables direct thermal coupling to chassis or heatsink for compact thermal management

Pinout & Package

Package: PG-TO262-3-1 (lead-free, RoHS-compliant, MSL1, 260 °C peak reflow). Thermally enhanced variant of TO-262 with isolated drain tab for PCB mounting and improved heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense resistor; electrically tied to exposed metal tab in some variants
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <50 nC drive; sensitive to ESD; requires gate resistor for dV/dt control
Pin 3 (Drain)	Power output	High-current drain connection; electrically connected to large copper pad on backside for thermal conduction

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per AEC standard
100% avalanche tested	Each unit undergoes single-pulse avalanche stress test to guarantee minimum 125 mJ ruggedness
Green RoHS package	Lead-free solderable construction compliant with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020D
175 °C operation	Rated for continuous operation up to 175 °C junction temperature, enabling placement near hot components
Optimized body diode	34 ns t_rr and 36 nC Q_rr reduce switching losses and ringing in freewheeling paths

Applications

Automotive Body Control Module

12 V DC-DC Buck Converter

Use Scenario: Switching high-current loads like headlight relays, window lift motors, and mirror actuators in centralized BCMs.

IC Role / Device Role / Timing Role: Low-side power switch controlling load current path with PWM or on/off logic.

Use Value: 5.4 mΩ R_DS(on) minimizes I²R heating at 80 A, eliminating need for auxiliary cooling in space-constrained modules.

Use Scenario: High-efficiency synchronous rectifier in 12 V input, 3.3–5 V output buck converters for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: 34 ns reverse recovery time and low Q_rr suppress shoot-through risk and EMI during dead-time transitions.

Electric Power Steering (EPS) Motor Driver

Industrial 24 V BLDC Inverter Stage

Use Scenario: Half-bridge leg in three-phase inverter driving 12 V EPS assist motor with regenerative braking capability.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge topology with integrated body diode conducting reverse current during PWM off-time.

Use Value: 125 mJ avalanche rating protects against inductive kickback during fault conditions without external snubbers.

Use Scenario: Output stage in 24 V industrial BLDC motor drives for pumps, fans, and conveyors.

IC Role / Device Role / Timing Role: Power switch in 3-phase inverter with gate drive compatible with standard 10 V logic-level controllers.

Use Value: 175 °C max junction temperature allows operation in sealed enclosures with limited airflow and high ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S3-06	Same die, PG-TO263-3-2 package with exposed drain pad for superior thermal performance (R_thJC = 1.2 K/W)	Better suited for surface-mount designs with thermal vias and large copper pour	Select when PCB layout permits SMD mounting and thermal optimization is prioritized over through-hole assembly
IPP80N04S3-06	Same die, PG-TO220-3-1 package with insulated tab and lower cost assembly	Preferred for prototyping, low-volume production, or legacy through-hole board designs	Select when mechanical mounting simplicity, insulation requirements, or manual soldering are primary constraints

Compared with IPB80N04S3-06 and IPP80N04S3-06, IPI80N04S306AKSA1 offers identical electrical specs but balances thermal performance and through-hole manufacturability via its PG-TO262-3-1 package-ideal for mid-volume automotive modules needing reliable leaded assembly and moderate heatsinking.

Availability

IPI80N04S306AKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering motor drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for IPI80N04S306AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-current, low-voltage automotive power switching applications where ruggedness, thermal reliability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum gate-source voltage rating for IPI80N04S306AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 6 V minimum for guaranteed R_DS(on) specification. Gate resistors should be selected to limit dV/dt-induced false turn-on during high-speed switching.

Is IPI80N04S306AKSA1 suitable for synchronous rectification in a 12 V buck converter?

Yes. With its 34 ns reverse recovery time, 36 nC Q_rr, and low 4.3–5.4 mΩ R_DS(on), it reduces conduction and switching losses versus Schottky diodes. Its body diode is optimized for freewheeling, and the 125 mJ avalanche rating handles transient overvoltage during light-load discontinuous conduction mode.

Does IPI80N04S306AKSA1 require a heatsink in automotive applications?

At 80 A continuous current, a heatsink is required to maintain T_j ≤ 175 °C. With R_thJC = 1.5 K/W and typical R_thCA ≈ 15–25 K/W for a modest aluminum heatsink, junction temperature remains within spec. For pulsed loads <50 A, PCB copper area alone may suffice per the 40 K/W R_thJA (6 cm² copper) spec.

How does the AEC-Q101 qualification impact design validation for IPI80N04S306AKSA1?

AEC-Q101 certification confirms qualification across temperature cycling, humidity, mechanical shock, and high-temperature operating life tests specific to discrete semiconductors. This eliminates need for redundant qualification testing in automotive Tier 1 designs and assures reliability in under-hood environments up to 125 °C ambient with 50 °C margin to T_j max.

IPI80N04S306AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 52µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI80N04S306AKSA1 FAQ

1.How can I place an order for IPI80N04S306AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N04S306AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N04S306AKSA1 reliable?

The price and inventory of IPI80N04S306AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N04S306AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI80N04S306AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N04S306AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N04S306AKSA1?

IPI80N04S306AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N04S306AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N04S306AKSA1?

For technical support, including IPI80N04S306AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N04S306AKSA1 requirements.

6.How does Aetrix verify that IPI80N04S306AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80N04S306AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N04S306AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80N04S306AKSA1?

All IPI80N04S306AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N04S306AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N04S306AKSA1 part is unused and in its original packaging.

Return procedure for IPI80N04S306AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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