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Infineon Technologies IPI80N04S404AKSA1

Part No.:
IPI80N04S404AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI80N04S404AKSA1.pdf
Description:
MOSFET N-CH 40V 80A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,519

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Product details

Overview

IPI80N04S404AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 40 V VDS, 4.2 mΩ RDS(on) (max) at 10 V VGS, 80 A continuous drain current, and 175 °C operating temperature-designed for high-efficiency 12 V automotive DC-DC converters and motor control stages.

For engineers reviewing the IPI80N04S404AKSA1 datasheet, IPI80N04S404AKSA1 pinout, IPI80N04S404AKSA1 application, or IPI80N04S404AKSA1 equivalent, key selection criteria include its 2.1 K/W junction-to-case thermal resistance, 100 mJ single-pulse avalanche energy, 3.9–4.2 mΩ typical RDS(on) (SMD version), and ±20 V gate-source voltage rating under automotive-grade reliability constraints.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 3.9 mΩ typical RDS(on) at 10 V gate drive enables high-current operation with minimal I²R heating in compact SMD layouts.

The MOSFET features fully characterized dynamic parameters including 2650–3440 pF input capacitance, 20–46 pF reverse transfer capacitance, and 33–43 nC total gate charge-enabling precise gate driver sizing for PWM frequencies up to 500 kHz in synchronous buck topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 12 V automotive battery systems with transient margin.
RDS(on) max4.2 mΩ at VGS = 10 V, Tj = 25 °C - Enables ≤3.4 W conduction loss at 80 A, critical for thermally constrained modules.
ID continuous80 A at TC = 25 °C - Supported by robust bondwire construction and 2.1 K/W RthJC.
EAS100 mJ (ID = 40 A) - Confirmed single-pulse avalanche ruggedness for inductive load switching.
Qg33–43 nC - Determines gate driver peak current requirement (~2.5 A for 15 ns rise time with 3.5 Ω RG).
Tj max+175 °C - Qualified for under-hood automotive environments per AEC-Q101.
VGS(th)2.0–4.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers when used with appropriate margin.

Pinout & Package

PG-TO262-3-1 (IPAK) package with isolated tab, lead-free and RoHS-compliant. Thermal pad on drain terminal enables direct PCB copper pour attachment for enhanced heat dissipation.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Power return path for load currentLow-inductance connection point for source loop routing; ties to ground plane or low-side shunt.
2 (Gate)Control electrode for channel formationHigh-impedance input requiring <100 nA leakage; sensitive to ESD-requires series resistor and TVS protection.
3 (Drain)Main current-carrying terminal (tab-connected)Internally bonded to metal tab; must be soldered to ≥6 cm² copper area for 40 K/W RthJA performance.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications with zero defects in stress testing.
100% avalanche testedEach unit passes single-pulse EAS screening at 100 mJ, ensuring robustness against inductive kickback.
MSL1 ratingCompatible with standard 260 °C peak reflow profiles without preconditioning-reduces manufacturing risk.
Green productRoHS-compliant materials and halogen-free molding compound meet EU ELV and OEM sustainability requirements.
OptiMOS™-T2 trench architectureDelivers 15% lower RDS(on) × Qg figure-of-merit vs. prior generation, improving efficiency in high-frequency switching.

Applications

Automotive 12 V DC-DC ConvertersElectric Power Steering (EPS) H-Bridge Stages

Use Scenario: High-current synchronous buck converter stepping 12 V battery to 5 V/3.3 V for ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side power switch handling 80 A continuous output with <10 ns switching transitions.

Use Value: 4.2 mΩ RDS(on) limits conduction loss to <2.7 W at full load, enabling passive cooling in space-constrained modules.

Use Scenario: Bidirectional motor drive in column-assist EPS systems with regenerative braking.

IC Role / Device Role / Timing Role: High-current quadrant-switching element in half-bridge leg, conducting up to 320 A pulsed current.

Use Value: 100 mJ avalanche capability safely clamps flyback energy during rapid direction reversal without external snubbers.

On-Board Charger (OBC) Auxiliary Supplies48 V Mild Hybrid Starter-Generator Control

Use Scenario: Isolated auxiliary supply powering gate drivers and MCU in OBC main inverter section.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology operating at 200–300 kHz.

Use Value: 33–43 nC Qg allows efficient drive with low-power 1 A gate drivers, reducing auxiliary supply loading.

Use Scenario: High-side switch in 48 V/12 V bi-directional DC-DC for start-stop and torque-fill functions.

IC Role / Device Role / Timing Role: 40 V-rated switch managing bidirectional power flow between 48 V bus and starter motor winding.

Use Value: 175 °C Tj max supports operation adjacent to engine bay heat sources without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N04S4-04Same die, PG-TO263-3-2 package with exposed drain pad; 3.9 mΩ typical RDS(on) (SMD).Better thermal performance on PCB (RthJA = 40 K/W with 6 cm² copper) but requires surface-mount assembly.Select for higher-density SMD designs where thermal management via PCB copper is preferred over through-hole mounting.
IPP80N04S4-04Same die, PG-TO220-3-1 package; identical RDS(on) and ratings but higher RthJA (62 K/W).Suitable for prototyping and lower-volume through-hole production; less effective thermal spreading than TO262/TO263 variants.Select for manual assembly, legacy board compatibility, or cost-sensitive non-automotive industrial use.

Compared with IPB80N04S4-04 and IPP80N04S4-04, the IPI80N04S404AKSA1 offers a balanced trade-off: TO262's mechanical robustness and ease of through-hole rework, plus thermal performance closer to TO263 than TO220-making it optimal for volume automotive production with mixed-technology PCBs.

Availability

IPI80N04S404AKSA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and on-board charger auxiliary supplies requiring stable component supply across extended temperature ranges and long lifecycle commitments.

Supply support for IPI80N04S404AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-current, high-reliability 12 V and 48 V automotive subsystems demanding AEC-Q101 compliance and robust avalanche performance.

FAQ

What is the maximum gate-source voltage rating for safe operation?

The absolute maximum VGS is ±20 V. Operation beyond this risks irreversible gate oxide breakdown. For reliable 12 V gate drive, a 15 V clamp or Zener protection is recommended-especially in noisy automotive environments where transients may exceed 12 V rail.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to control dV/dt and prevent oscillation. With 33–43 nC Qg and typical driver output impedance, a 3.5 Ω resistor achieves ~12 ns rise time per datasheet test conditions; values between 2.2 Ω and 10 Ω balance switching loss and EMI.

How is thermal performance affected when mounted without a heatsink?

Without external heatsinking, thermal performance relies entirely on PCB copper area. With 6 cm² of 70 µm copper on FR4, RthJA is 40 K/W-allowing ~45 W dissipation at ΔT = 150 K. Below that area, derating is mandatory; at 1 cm², RthJA exceeds 100 K/W.

Is the body diode suitable for freewheeling in synchronous rectification?

Yes-the integrated Schottky-like body diode has VSD = 0.9–1.3 V at 80 A and trr = 39 ns, making it viable for synchronous rectification in buck converters up to ~300 kHz. However, external Schottky diodes remain preferred for ultra-low-loss or high-frequency (>500 kHz) designs.

IPI80N04S404AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3440 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
71W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI80N04S404AKSA1 FAQ

1.How can I place an order for IPI80N04S404AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N04S404AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N04S404AKSA1 reliable?

The price and inventory of IPI80N04S404AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N04S404AKSA1 is usually 5 days.

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IPI80N04S404AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N04S404AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N04S404AKSA1?

For technical support, including IPI80N04S404AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N04S404AKSA1 requirements.

6.How does Aetrix verify that IPI80N04S404AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80N04S404AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N04S404AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80N04S404AKSA1?

All IPI80N04S404AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N04S404AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N04S404AKSA1 part is unused and in its original packaging.

Return procedure for IPI80N04S404AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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