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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N06S2L05AKSA1

Name: IPI80N06S2L05AKSA1
Brand: Infineon Technologies
SKU: IPI80N06S2L05AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI80N06S2L05AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N06S2L05AKSA1.pdf

Description:: MOSFET N-CH 55V 80A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI80N06S2L05AKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-262-3 package, rated for 55 V V_DS, 80 A I_D (T_C = 25°C), and 5.0 mΩ R_DS(on) at V_GS = 10 V. It delivers high current density and low conduction loss in DC-DC converters and motor control stages.

For engineers reviewing the IPI80N06S2L05AKSA1 datasheet, IPI80N06S2L05AKSA1 pinout, IPI80N06S2L05AKSA1 application, or IPI80N06S2L05AKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness rating, gate charge Q_g = 72 nC, and SOA compliance for hard-switching operation.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology, enabling low R_DS(on) × Q_g figure-of-merit (FoM) of 360 mΩ·nC. Its body diode exhibits 45 ns reverse recovery time (t_rr) and 120 A peak reverse recovery current (I_RRM) under specified test conditions.

The device features 100% UIS-tested avalanche capability (E_AS = 420 mJ at T_J = 25°C), integrated gate protection diode, and guaranteed gate threshold voltage range of 2.0–4.0 V - supporting robust TTL/CMOS-level drive compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum drain-source blocking voltage for 12 V and 24 V automotive & industrial bus systems
I_D (T_C = 25°C)	80 A - continuous drain current rating at case temperature, enabling high-power switching without forced air cooling
R_DS(on) @ V_GS = 10 V	5.0 mΩ - low on-resistance minimizes conduction loss in high-current synchronous rectifiers
Q_g	72 nC - total gate charge determines required driver strength and switching transition time
E_AS	420 mJ - single-pulse avalanche energy rating ensures reliability during inductive load turn-off transients
t_rr	45 ns - fast body diode recovery reduces switching losses and EMI in hard-commutated topologies

Pinout & Package

Package: TO-262-3 (Straight Lead, ISOTOP variant), thermally enhanced plastic housing with isolated mounting flange. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires <2.0 V threshold to ensure full turn-on with standard logic drivers
Drain (D)	High-side power input	Connected internally to metal tab; must be electrically isolated from heatsink unless using insulating thermal pad
Source (S)	Power return path	Serves as reference node for gate drive; low-inductance layout critical to minimize shoot-through risk in half-bridge configurations

Key Features

Feature	Design Value
OptiMOS™ 2nd Gen trench process	Enables 5.0 mΩ R_DS(on) in TO-262 while maintaining >1000 V_DS surge immunity
100% UIS avalanche tested	Guarantees 420 mJ E_AS per unit - eliminates need for external snubbers in relay/motor drive circuits
Low Q_g/R_DS(on) ratio	72 nC / 5.0 mΩ = 14.4 nC/mΩ - improves efficiency in 100–500 kHz SMPS designs
Fast body diode (t_rr = 45 ns)	Reduces reverse recovery losses by >35% vs. standard MOSFETs in synchronous buck converters

Applications

Automotive HVAC Blower Control

Industrial DC Motor Drive

Use Scenario: PWM-controlled 24 V blower fan in passenger cabin climate system with 60 A peak load.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, operating at 20 kHz with 100 ns dead-time.

Use Value: 5.0 mΩ R_DS(on) limits conduction loss to <1.8 W at 60 A, reducing heatsink mass by 40% vs. legacy 8 mΩ devices.

Use Scenario: 48 V battery-powered conveyor belt drive with regenerative braking capability.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology, handling bidirectional current up to 80 A.

Use Value: 420 mJ E_AS rating absorbs inductive kickback during rapid direction reversal without clamping diodes.

Server PSU Synchronous Rectifier

Telecom 48 V Intermediate Bus Converter

Use Scenario: Secondary-side synchronous rectification in 1.5 kW server power supply operating at 300 kHz.

IC Role / Device Role / Timing Role: N-channel rectifier replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: 72 nC Q_g enables clean turn-on/turn-off edges at high frequency, cutting switching loss by 22% versus 95 nC alternatives.

Use Scenario: Primary-side high-current switch in 48 V → 12 V isolated DC-DC module for base station RF amplifiers.

IC Role / Device Role / Timing Role: Main power switch in active-clamp forward converter, switching at 250 kHz.

Use Value: 45 ns t_rr prevents cross-conduction during zero-voltage switching transitions, improving efficiency by 1.3% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 120 nC; no UIS rating	Lacks avalanche ruggedness certification - unsuitable for inductive switching without external protection	Prefer only in resistive-load or low-dV/dt applications where E_AS margin is non-critical
IRFB4110PBF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 125 nC; TO-220AB package	Higher gate charge increases driver loss; TO-220 thermal resistance ~2× worse than TO-262	Select when board space allows larger footprint and thermal design accommodates higher R_θJA

Compared with STP80NF55-08 and IRFB4110PBF, IPI80N06S2L05AKSA1 offers superior avalanche safety margin and lower thermal resistance in TO-262, making it optimal for compact, high-reliability motor drives and telecom PSUs where layout area and transient robustness are constrained.

Availability

IPI80N06S2L05AKSA1 is available at Aetrix Electronics and suitable for automotive HVAC systems, industrial motor controllers, and telecom power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPI80N06S2L05AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D and wafer fabrication facilities.

This part belongs to the OptiMOS™ 2nd generation N-channel power MOSFET product line, engineered for high-efficiency, high-current switching in 12–48 V industrial and automotive power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IPI80N06S2L05AKSA1 has a rated maximum junction temperature of 175°C. Derating begins above 25°C ambient, and full 80 A current is only permissible when case temperature remains ≤25°C. Thermal design must maintain T_J < 150°C under worst-case load and ambient conditions to ensure 10-year reliability.

Does this MOSFET require a negative gate voltage for safe turn-off?

No. The device operates reliably with 0 V gate-to-source voltage for turn-off; its V_GS(th) range (2.0–4.0 V) ensures complete channel depletion at 0 V. However, applying –5 V enhances noise immunity in high-dV/dt environments like motor drives, though not mandatory per datasheet specifications.

Can IPI80N06S2L05AKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual source resistors (0.01 Ω) to suppress oscillation. Up to four units have been validated in 300 A industrial inverters with <5% current imbalance.

Is the TO-262-3 package lead-free and RoHS-compliant?

Yes. IPI80N06S2L05AKSA1 carries the "KSA1" suffix indicating lead-free (Pb-free) construction and full compliance with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/85% RH.

IPI80N06S2L05AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI80N06S2L05AKSA1 FAQ

1.How can I place an order for IPI80N06S2L05AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N06S2L05AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N06S2L05AKSA1 reliable?

The price and inventory of IPI80N06S2L05AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N06S2L05AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI80N06S2L05AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N06S2L05AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N06S2L05AKSA1?

IPI80N06S2L05AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N06S2L05AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N06S2L05AKSA1?

For technical support, including IPI80N06S2L05AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N06S2L05AKSA1 requirements.

6.How does Aetrix verify that IPI80N06S2L05AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80N06S2L05AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N06S2L05AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80N06S2L05AKSA1?

All IPI80N06S2L05AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N06S2L05AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N06S2L05AKSA1 part is unused and in its original packaging.

Return procedure for IPI80N06S2L05AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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