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Infineon Technologies IPI80N06S2L05AKSA2

Part No.:
IPI80N06S2L05AKSA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI80N06S2L05AKSA2.pdf
Description:
MOSFET N-CH 55V 80A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:500

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Product details

Overview

IPI80N06S2L05AKSA2 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for high-current DC-DC conversion and automotive power switching. It delivers 80 A continuous drain current at TC = 100 °C, features ultra-low RDS(on) of 4.5 mΩ (max) at VGS = 4.5 V, and supports 55 V VDS with 100% avalanche energy rating of 800 mJ. It is AEC-Q101 qualified and rated for 175 °C operation in automotive engine control units.

For engineers reviewing the IPI80N06S2L05AKSA2 datasheet, IPI80N06S2L05AKSA2 pinout, IPI80N06S2L05AKSA2 application, or IPI80N06S2L05AKSA2 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), thermal resistance RthJC = 0.5 K/W, and SMD-compatible TO262-3-1 package footprint for high-power board-level integration.

Technical Context

This OptiMOS® device uses trench-gate silicon technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage range (1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

The MOSFET integrates a robust body diode with trr = 65–80 ns and Qrr = 125–160 nC, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by its 0.5 K/W junction-to-case resistance and MSL1-rated lead-free packaging compatible with 260 °C peak reflow profiles.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
RDS(on) max @ VGS=4.5 V4.5 mΩ - enables <1.5 W conduction loss at 80 A, reducing heatsink requirements
ID continuous @ TC=100 °C80 A - sustained current capability under high-temperature under-hood conditions
EAS single-pulse800 mJ - verified avalanche ruggedness for inductive load switching without external snubbers
VGS(th)1.2–2.0 V - logic-level gate drive compatibility with standard MCU GPIOs
RthJC0.5 K/W - enables efficient heat transfer to heatsink via case mounting
Qg total170–230 nC - defines gate driver power requirement for 100 kHz+ switching frequencies

Pinout & Package

Package: PG-TO262-3-1 (straight-lead variant of TO-220, surface-mount compatible with through-hole footprint). Case-isolated, drain-connected tab for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring <230 nC charge for full turn-on
Pin 3 (Drain)Power output / high-side switch nodeInternally connected to metal tab; must be soldered to PCB copper pour for thermal management

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis systems per stress test requirements
Logic-level gate driveOperates fully enhanced with 4.5 V gate drive, eliminating need for gate drivers in 5 V systems
100% avalanche testedEach unit subjected to single-pulse EAS = 800 mJ stress, ensuring reliability in inductive switching
MSL1 reflow ratingCompatible with standard lead-free SMT processes up to 260 °C peak temperature
Green (lead-free) packageRoHS-compliant construction with matte tin plating on leads and drain tab

Applications

Automotive Engine Control Unit (ECU)Industrial DC Motor Driver

Use Scenario: High-side switching of fuel injector solenoids in 12 V/24 V engine management systems.

IC Role / Device Role / Timing Role: Power switch controlling 10–20 ms pulse-width modulated current bursts into inductive loads.

Use Value: Avalanche ruggedness ensures reliable operation during back-EMF transients without clamping diodes.

Use Scenario: Half-bridge leg in 48 V BLDC motor drives for factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element handling 80 A continuous current with <100 ns switching transitions.

Use Value: 4.5 mΩ RDS(on) reduces conduction losses by >30% vs. legacy 6.5 mΩ devices at same current density.

Server PSU OR-ing CircuitOnboard Charger (OBC) DC-DC Stage

Use Scenario: Reverse-current protection in redundant 12 V server power distribution rails.

IC Role / Device Role / Timing Role: Low-VDS forward conduction path replacing Schottky diodes in hot-swap modules.

Use Value: Body diode VSD = 0.9–1.3 V enables lower forward drop than discrete diodes, improving efficiency at 60–100 A.

Use Scenario: Primary-side synchronous rectifier in isolated 3.3 kW bidirectional OBC DC-DC converter.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100–200 kHz with zero-voltage switching (ZVS) assist.

Use Value: Ciss = 5700 pF and Qgd/Qgs ratio of ~3.2 support stable ZVS timing across temperature and load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N06S2L05AKSA2TO-263-3 package; RthJC = 0.5 K/W; identical die, different leadframeBetter thermal performance in SMD layouts with large copper areaSelect when PCB space allows SMD heatsinking and automated assembly is required
IPP80N06S2L05AKSA2TO-220-3 package; same RDS(on), slightly higher RthJC due to leadframe geometryPreferred for prototyping, manual assembly, or legacy through-hole designsSelect when mechanical mounting flexibility or field-replaceability is prioritized over thermal density

Compared with IPB80N06S2L05AKSA2 and IPP80N06S2L05AKSA2, the IPI80N06S2L05AKSA2 offers identical silicon performance in a straight-lead TO262-3-1 package-providing optimal balance of SMT compatibility, thermal interface simplicity, and mechanical robustness for high-volume automotive production.

Availability

IPI80N06S2L05AKSA2 is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drives, and server power supply OR-ing circuits requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for IPI80N06S2L05AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power transistor product line, engineered specifically for high-current, high-temperature automotive and industrial switching applications where logic-level drive and avalanche ruggedness are critical.

FAQ

What is the maximum safe operating temperature for IPI80N06S2L05AKSA2?

The device is rated for continuous operation from –55 °C to +175 °C junction temperature. Its 175 °C Tj rating is validated per AEC-Q101 stress tests and supported by RthJC = 0.5 K/W and thermal derating curves in the datasheet. Ambient temperature limits depend on PCB layout and heatsinking.

Does IPI80N06S2L05AKSA2 require a gate resistor for stability?

Yes-a gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on. The device's Qg = 170–230 nC and Ciss = 5700 pF make it sensitive to fast edge rates; proper gate drive impedance ensures controlled dV/dt and EMI compliance.

Can IPI80N06S2L05AKSA2 replace a standard 60 V MOSFET in a 48 V telecom system?

Yes-it is rated for 55 V VDS with 20 % margin above 48 V nominal bus, and its 800 mJ avalanche rating handles transient overvoltage events. However, verify SOA limits at elevated temperatures and ensure gate drive remains within 1.2–2.0 V threshold range under system VGS variation.

Is the drain tab electrically isolated from other pins?

No-the drain is internally connected to the metal tab (Pin 3), which serves as both thermal path and high-current conductor. The tab must be electrically tied to the drain net on the PCB and cannot be used as a floating heatsink. Electrical isolation requires insulating hardware or thermal pads rated for ≥55 V working voltage.

IPI80N06S2L05AKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
230 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3-1

IPI80N06S2L05AKSA2 FAQ

1.How can I place an order for IPI80N06S2L05AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N06S2L05AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N06S2L05AKSA2 reliable?

The price and inventory of IPI80N06S2L05AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N06S2L05AKSA2 is usually 5 days.

3.What payment methods are accepted for IPI80N06S2L05AKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N06S2L05AKSA2 transactions.

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IPI80N06S2L05AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N06S2L05AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N06S2L05AKSA2?

For technical support, including IPI80N06S2L05AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N06S2L05AKSA2 requirements.

6.How does Aetrix verify that IPI80N06S2L05AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPI80N06S2L05AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N06S2L05AKSA2 meets industry standards.

7.What is the process for return or replacement of IPI80N06S2L05AKSA2?

All IPI80N06S2L05AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N06S2L05AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N06S2L05AKSA2 part is unused and in its original packaging.

Return procedure for IPI80N06S2L05AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI80N06S2L05AKSA2 Tags

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