Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N06S2L11AKSA2

Name: IPI80N06S2L11AKSA2
Brand: Infineon Technologies
SKU: IPI80N06S2L11AKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPI80N06S2L11AKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N06S2L11AKSA2.pdf

Description:: MOSFET N-CH 55V 80A TO262-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:20,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPI80N06S2L11AKSA2 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low R_DS(on) of 8.7 mΩ (typ.) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and designed for high-efficiency DC-DC conversion in automotive body control modules.

For engineers reviewing the IPI80N06S2L11AKSA2 datasheet, IPI80N06S2L11AKSA2 pinout, IPI80N06S2L11AKSA2 application, or IPI80N06S2L11AKSA2 equivalent, key selection criteria include its 1.6 V gate threshold voltage, 10.7 mΩ max R_DS(on) at 4.5 V drive, 2075 pF input capacitance, 175 °C maximum junction temperature, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction losses while maintaining fast switching performance. Its gate plateau voltage of 3.6 V enables robust logic-level drive compatibility, and the integrated body diode features 54 ns typical reverse recovery time with 61 nC Q_rr at T_j = 25 °C.

The MOSFET operates within a -55 °C to +175 °C junction temperature range and delivers 280 mJ single-pulse avalanche energy at I_D = 80 A. Thermal resistance from junction-to-case is fixed at 0.95 K/W, supporting high-power density designs when mounted on appropriately sized copper areas.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before breakdown; defines safe operating range in 48 V automotive systems.
R_DS(on) max @ V_GS=10 V	11.0 mΩ - Limits conduction loss to ≤7.04 W at 80 A, enabling high-current switching without forced cooling.
R_DS(on) max @ V_GS=4.5 V	14.7 mΩ - Ensures reliable turn-on under low-voltage microcontroller drive (e.g., 3.3 V/5 V GPIO).
Q_g total	80 nC - Determines gate driver power requirement; ~2.4 W average drive power at 30 kHz switching.
E_AS	280 mJ - Withstands single-pulse inductive energy spikes without failure, critical for motor drive freewheeling.
t_r/t_f	32 ns / 13 ns - Enables <100 ns total switching transitions, reducing switching loss in high-frequency SMPS.
V_GS(th)	1.2–2.0 V - Low threshold supports direct interface with standard logic outputs and reduces risk of partial turn-on.

Pinout & Package

Package: PG-TO262-3-1 - Isolated flange, through-hole variant with 3 terminals; compatible with TO-262 footprint and thermal mounting via screw or clamp.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Connected to high-side switch node or load return; electrically tied to metal flange for thermal conduction.
Source (S)	Current return reference	Serves as power ground reference for gate drive; requires low-inductance PCB routing to minimize shoot-through risk.
Gate (G)	Control terminal	High-impedance input requiring <80 nC charge; sensitive to ESD and ringing-requires RC snubber or gate resistor ≥3 Ω.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock testing.
100% avalanche tested	Each unit subjected to controlled single-pulse avalanche stress, ensuring robustness in inductive load commutation.
Logic-level gate drive	Guaranteed turn-on at V_GS ≥ 4.5 V, eliminating need for gate boosters in 5 V or 3.3 V controller systems.
Green (lead-free) package	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 rating for lead-free reflow up to 260 °C.
Ultra-low R_DS(on)	Reduces conduction loss by >35% vs. prior-generation 60 V MOSFETs, improving efficiency in 12 V/24 V battery-fed loads.

Applications

Automotive Body Control Module

Industrial DC Motor Driver

Use Scenario: High-side power switching for headlight, fog lamp, and HVAC blower control in 12 V/24 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Main power switch managing up to 80 A resistive/inductive loads with PWM dimming and short-circuit protection.

Use Value: 175 °C operation allows placement near heat sources; 280 mJ E_AS withstands lamp inrush and relay coil flyback.

Use Scenario: H-bridge upper-arm switching in brushed DC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: High-side switch synchronized with complementary low-side MOSFETs for bidirectional torque control.

Use Value: 10.7 mΩ R_DS(on) at 4.5 V ensures full conduction even with microcontroller GPIO drive, minimizing heat sink size.

Server PSU OR-ing Circuit

Energy Storage System BMS

Use Scenario: Reverse-current blocking in redundant 48 V server power supply units using ideal diode configuration.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diodes, actively controlled to eliminate forward voltage drop.

Use Value: 1.0–1.3 V V_SD of integrated body diode enables fast reverse recovery (54 ns), reducing cross-conduction loss during transition.

Use Scenario: Cell balancing and pack isolation switching in lithium-ion battery management systems for EV charging infrastructure.

IC Role / Device Role / Timing Role: High-reliability disconnect switch activated during overvoltage, overtemperature, or fault conditions.

Use Value: AEC-Q101 qualification provides proven reliability for safety-critical BMS functions; 0.95 K/W R_thJC supports thermal monitoring accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2L-11	Same die, PG-TO220-3-1 package; higher R_thJA (62 K/W vs. 40 K/W on PCB) due to smaller thermal pad area.	Better suited for lower-power, cost-sensitive consumer power supplies where heatsinking is less constrained.	Select when board space permits TO-220 mounting and thermal budget allows ~15% higher junction temperature rise.
IPB80N06S2L-11	Same die, PG-TO263-3-2 surface-mount package; identical R_DS(on) but optimized for automated assembly and improved thermal transfer to PCB.	Ideal for high-volume automotive ECUs requiring reflow compatibility and minimal manual handling.	Prefer for SMT production lines needing MSL1 compliance and no through-hole drilling; same electrical specs, different assembly flow.

Compared with IPP80N06S2L-11 and IPB80N06S2L-11, the IPI80N06S2L11AKSA2 offers through-hole mechanical stability with thermal performance closer to the SMD variant-making it optimal for ruggedized industrial controls where vibration resistance and serviceability matter.

Availability

IPI80N06S2L11AKSA2 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC motor drivers, server PSU OR-ing circuits, and energy storage system BMS requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IPI80N06S2L11AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation power transistor family, engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding low R_DS(on), fast switching, and robust avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current for IPI80N06S2L11AKSA2 is 58 A at T_C = 100 °C and V_GS = 10 V. This derating reflects thermal limits imposed by the 0.95 K/W junction-to-case resistance and package construction-not silicon capability alone.

Is this MOSFET suitable for 3.3 V microcontroller gate drive?

Yes-its guaranteed V_GS(th) range of 1.2–2.0 V and R_DS(on) of ≤14.7 mΩ at V_GS = 4.5 V ensures full enhancement with 3.3 V logic when paired with appropriate gate resistor and layout. However, peak current capability drops to ~65 A at that drive level.

Does the device include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic fast-recovery body diode rated for 80 A continuous forward current. Key specs include V_SD = 1.0–1.3 V at I_F = 80 A and T_j = 25 °C, t_rr = 54–67 ns, and Q_rr = 61–76 nC, making it suitable for synchronous rectification and freewheeling in hard-switched topologies.

How does the PG-TO262-3-1 package differ thermally from PG-TO263-3-2?

Both packages share identical die and R_thJC = 0.95 K/W, but PG-TO262-3-1 uses through-hole leads and a flange for mechanical mounting, whereas PG-TO263-3-2 has a surface-mount tab optimized for PCB copper area conduction. On a 6 cm² cooling pad, PG-TO263 achieves R_thJA ≈ 40 K/W; PG-TO262 typically achieves ~45–48 K/W under equivalent conditions.

IPI80N06S2L11AKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10.7mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2075 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI80N06S2L11AKSA2 FAQ

1.How can I place an order for IPI80N06S2L11AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N06S2L11AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N06S2L11AKSA2 reliable?

The price and inventory of IPI80N06S2L11AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N06S2L11AKSA2 is usually 5 days.

3.What payment methods are accepted for IPI80N06S2L11AKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N06S2L11AKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N06S2L11AKSA2?

IPI80N06S2L11AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N06S2L11AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N06S2L11AKSA2?

For technical support, including IPI80N06S2L11AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N06S2L11AKSA2 requirements.

6.How does Aetrix verify that IPI80N06S2L11AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPI80N06S2L11AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N06S2L11AKSA2 meets industry standards.

7.What is the process for return or replacement of IPI80N06S2L11AKSA2?

All IPI80N06S2L11AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N06S2L11AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N06S2L11AKSA2 part is unused and in its original packaging.

Return procedure for IPI80N06S2L11AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.