Infineon Technologies IPI80N06S3-05

Overview

IPI80N06S3-05 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO262-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 100 °C, and 5.1 mΩ max R_DS(on) (SMD version). It is AEC-Q101 qualified, operates up to 175 °C junction temperature, and is 100% avalanche tested-used in high-current DC-DC converters and motor control stages of electric power steering systems.

For engineers reviewing the IPI80N06S3-05 datasheet, IPI80N06S3-05 pinout, IPI80N06S3-05 application, or IPI80N06S3-05 equivalent, key selection criteria include its 0.9 K/W R_thJC, 158–240 nC total gate charge, 345 mJ single-pulse avalanche energy, and diode forward voltage of 0.6–1.3 V at 80 A.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-efficiency 12 V/24 V automotive power stages. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS drive compatibility while maintaining noise immunity under load transients.

The integrated body diode supports synchronous rectification and freewheeling with 70 ns reverse recovery time and 100 nC Q_rr, enabling hard-switched topologies up to 100 kHz without external snubbers in battery disconnect and starter-generator circuits.

Key Specifications

Pinout & Package

PG-TO262-3-1 is a through-hole variant of the TO-262 package with isolated tab, featuring three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and serves as primary thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S3-05 and IPB80N06S3-05, the IPI80N06S3-05 offers a balanced trade-off: through-hole reliability of TO-220 with near-SMD thermal performance (R_thJC = 0.9 K/W), making it optimal for mid-volume automotive ECUs requiring field-serviceable power stages and compact thermal design.

Availability

IPI80N06S3-05 is available at Aetrix Electronics and suitable for electric power steering units, 48 V battery disconnect systems, and start-stop control modules requiring stable component supply across extended automotive lifecycles.

Supply support for IPI80N06S3-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and fabrication facilities.

This part belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-current, high-temperature automotive power conversion-emphasizing ruggedness, low R_DS(on) × Q_g, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPI80N06S3-05?

The absolute maximum gate-source voltage is ±20 V, with gate oxide integrity validated at −5 V and +20 V per qualification test. Operation beyond this range risks irreversible gate oxide breakdown. For reliable 12 V system designs, a 15 V gate drive with active clamping is recommended to avoid overshoot during fast switching transitions.

Does IPI80N06S3-05 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic fast-recovery body diode rated for 80 A continuous forward current and 320 A pulsed current. Key parameters include V_SD = 0.6–1.3 V at 80 A and 25 °C, t_rr = 70 ns, and Q_rr = 100 nC. These values enable efficient freewheeling in half-bridge topologies without external diodes in most 12 V/48 V automotive applications.

How does the thermal resistance of IPI80N06S3-05 compare between junction-to-case and junction-to-ambient?

R_thJC is fixed at 0.9 K/W, representing the intrinsic thermal path from die to package tab. R_thJA varies significantly: 62 K/W for leaded mounting (no heatsink), but drops to 40 K/W with 6 cm² copper area on FR4 PCB. This highlights the critical role of heatsink interface quality-thermal paste resistance and mounting pressure directly impact achievable power dissipation.

Is IPI80N06S3-05 suitable for use in life-support medical devices?

No. Infineon explicitly prohibits use in life-support devices or systems unless expressly approved in writing. The device lacks the redundancy, fault coverage, and certification (e.g., ISO 13485, IEC 62304 Class C) required for implantable or critical-care applications where failure could endanger human life.