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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N06S3-07

Name: IPI80N06S3-07
Brand: Infineon Technologies
SKU: IPI80N06S3-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI80N06S3-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N06S3-07.pdf

Description:: MOSFET N-CH 55V 80A TO262-3

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Inventory:8,750

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Product details

Overview

IPI80N06S3-07 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 6.5 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, supports 175 °C operation, and features 100% single-pulse avalanche testing-designed for high-current automotive DC-DC converters and motor control stages.

For engineers reviewing the IPI80N06S3-07 datasheet, IPI80N06S3-07 pinout, IPI80N06S3-07 application, or IPI80N06S3-07 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness (455 mJ), gate charge profile (Q_g = 113–170 nC), and thermal resistance (R_thJC = 1.1 K/W) for thermally constrained PCB layouts.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (2.1–4.0 V) enables robust drive compatibility with 5 V and 10 V logic-level controllers, and its 1128 pF reverse transfer capacitance (Crss) supports stable operation under high dv/dt conditions in half-bridge configurations.

The integrated body diode exhibits low forward voltage (0.6–1.3 V at 80 A) and fast recovery (t_rr = 55 ns, Q_rr = 70 nC), reducing commutation losses in synchronous rectification and freewheeling applications. Thermal design is anchored by a validated junction-to-case resistance of 1.1 K/W, enabling high-power density mounting on copper-clad FR4 with minimal footprint cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin
R_DS(on) max	6.5 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 40 A continuous load
I_D cont	80 A at T_C = 25 °C - Supports high-current motor phase legs and battery disconnect switches
E_AS	455 mJ - Confirmed single-pulse avalanche energy for inductive load turn-off reliability
Q_g	113–170 nC - Determines gate driver power requirement and switching loss trade-off
t_r/t_f	41 ns / 33 ns - Enables >200 kHz PWM operation with controlled EMI in SMPS designs
V_GS(th)	2.1–4.0 V - Ensures clean turn-on with standard microcontroller GPIO or dedicated gate drivers

Pinout & Package

Package: PG-TO262-3-1 (3-pin, straight lead, through-hole variant of TO-262). Case material: thermally optimized epoxy with isolated drain tab. Mounting: screw or clamp to heatsink via drain-connected tab; source and gate pins are bent for PCB insertion.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current path collector	Internally connected to metal tab - must be electrically isolated and thermally coupled to heatsink
Pin 2 (Source)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin-source sensing in precision current monitoring
Pin 3 (Gate)	Control electrode for channel modulation	High-impedance input requiring <100 nC gate charge; sensitive to ESD and ringing without proper RC snubbing

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit subjected to single-pulse inductive switching stress up to 455 mJ
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak - no moisture sensitivity handling required
175 °C operating temperature	Enables placement near hot components (e.g., inverters, DC-DC inductors) without derating
Green product (RoHS)	Lead-free terminations and halogen-free molding compound compliant with EU Directive 2011/65/EU

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS)

Use Scenario: Step-down conversion from 48 V or 12 V battery to 5 V/3.3 V MCU rails in ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–300 kHz with forced-air cooling.

Use Value: 6.5 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 10 mΩ devices, improving efficiency at full load.

Use Scenario: Three-phase inverter driving brushless DC assist motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side power switch in 60–100 kHz PWM-controlled H-bridge with active short-circuit protection.

Use Value: 455 mJ avalanche rating ensures safe turn-off during sudden motor phase short events without external clamping.

On-Board Charger (OBC) Input Stage

12 V Battery Disconnect Switch

Use Scenario: AC-DC PFC boost stage switching element in bi-directional OBCs for EVs.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost switch with critical conduction mode (CRM) timing constraints.

Use Value: 1128 pF Crss minimizes Miller-induced shoot-through risk during high dv/dt transitions in CRM operation.

Use Scenario: Solid-state replacement for mechanical relay in 12 V battery main contactor for start-stop and energy management.

IC Role / Device Role / Timing Role: Normally-open high-current isolation switch controlled via isolated gate driver.

Use Value: 80 A continuous rating and 320 A pulsed capability support cold-cranking surge currents without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S3-07	Same die, PG-TO220-3-1 package - higher R_thJA (62 K/W) and lower mounting rigidity	Better suited for prototyping or low-volume manual assembly; less optimal for automated SMT or high-vibration environments	Select when board space allows larger TO-220 footprint and thermal budget permits higher case temperature rise
IPB80N06S3-07	Same die, PG-TO263-3-2 (D²PAK) package - identical R_thJC but surface-mount compatible	Required for fully automated PCB assembly; needs thermal pad stencil and reflow profile validation	Select for volume production where SMT line integration and thermal performance parity with through-hole are both critical

Compared with IPP80N06S3-07 and IPB80N06S3-07, the IPI80N06S3-07 offers identical electrical specs and thermal resistance (R_thJC = 1.1 K/W) in a through-hole PG-TO262 package-providing mechanical robustness and simplified heatsink mounting without sacrificing power density.

Availability

IPI80N06S3-07 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, on-board charging, and battery management systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IPI80N06S3-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability automotive and industrial switching applications demanding ruggedness, low R_DS(on), and validated avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for IPI80N06S3-07?

The absolute maximum gate-source voltage is ±20 V, with qualification performed at –5 V and +20 V per specification. Operation beyond this range risks permanent gate oxide damage. For reliable 10 V drive, use a clamped gate driver or Zener-based protection to prevent overshoot during fast switching transients.

Does IPI80N06S3-07 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. Based on Q_g = 113–170 nC and typical driver output impedance, a 3.5 Ω resistor is validated in the datasheet for 10 V drive with 27.5 V V_DD. Adjust between 2.2 Ω and 10 Ω depending on EMI targets and driver strength.

Can IPI80N06S3-07 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (see Fig. 8) enables inherent current sharing. Use matched gate drive paths, Kelvin source connections, and symmetrical PCB layout. Derate total current by 15% for thermal imbalance; verify with thermal imaging under full-load conditions.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode has t_rr = 55 ns and Q_rr = 70 nC, enabling efficient synchronous rectification at ≤300 kHz. However, for best efficiency, pair with a low-Q_rr external Schottky diode in critical high-frequency designs where reverse recovery loss dominates.

IPI80N06S3-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 51A, 10V

Vgs(th) (Max) @ Id:: 4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7768 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 135W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI80N06S3-07 FAQ

1.How can I place an order for IPI80N06S3-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N06S3-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N06S3-07 reliable?

The price and inventory of IPI80N06S3-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N06S3-07 is usually 5 days.

3.What payment methods are accepted for IPI80N06S3-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N06S3-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N06S3-07?

IPI80N06S3-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N06S3-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N06S3-07?

For technical support, including IPI80N06S3-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N06S3-07 requirements.

6.How does Aetrix verify that IPI80N06S3-07 is sourced from the original manufacturer or authorized distributors?

All IPI80N06S3-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N06S3-07 meets industry standards.

7.What is the process for return or replacement of IPI80N06S3-07?

All IPI80N06S3-07 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N06S3-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N06S3-07 part is unused and in its original packaging.

Return procedure for IPI80N06S3-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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