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Infineon Technologies IPI80N06S3L06XK

Part No.:
IPI80N06S3L06XK
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI80N06S3L06XK.pdf
Description:
MOSFET N-CH 55V 80A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,545

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Product details

Overview

IPI80N06S3L06XK from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO262-3-1 package, rated for 55 V VDS, 80 A continuous drain current at TC = 100 °C, and 5.6 mΩ maximum RDS(on) at VGS = 10 V. It is AEC-Q101 qualified, supports 175 °C operation, and is fully avalanche tested-used in high-efficiency DC-DC converters and automotive motor control stages.

For engineers reviewing the IPI80N06S3L06XK datasheet, IPI80N06S3L06XK pinout, IPI80N06S3L06XK application, or IPI80N06S3L06XK equivalent, key selection criteria include its 1.1 K/W RthJC, 131–196 nC total gate charge, 4.4 V gate plateau voltage, and robust 455 mJ single-pulse avalanche energy under defined test conditions.

Technical Context

This device employs a trench-based silicon process optimized for low conduction and switching losses in high-current, medium-voltage applications. Its gate threshold voltage (1.2–2.2 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while the 4.4 V gate plateau ensures stable Miller region control during hard-switching.

The integrated body diode exhibits 0.6–1.3 V forward voltage at 80 A and 25 °C, with 55 ns reverse recovery time and 70 nC Qrr, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage compatible with 48 V automotive and industrial bus systems
RDS(on) max5.6 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 80 A, critical for thermal management in compact designs
ID cont.80 A @ TC = 100 °C - Sustains full rated current under typical heatsink conditions without derating
EAS455 mJ - Confirmed single-pulse avalanche capability allows safe operation during inductive load switching transients
Qg131–196 nC - Defines driver strength requirement; impacts switching speed and gate drive power dissipation
RthJC1.1 K/W - Enables precise junction temperature estimation using case temperature measurement
tr/tf43 ns / 39 ns - Fast switching transitions reduce overlap losses in hard-switched converters

Pinout & Package

Package: PG-TO262-3-1 (3-pin, straight lead, isolated tab), thermally enhanced through-hole variant of the OptiMOS™-T2 family. Tab is electrically connected to drain.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring low-inductance routing and appropriate gate resistor for dV/dt control
Pin 3 (Drain)Power output / High-side connectionInternally bonded to metal tab; must be mounted to heatsink with electrical isolation if system grounding requires it

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements
100% avalanche testedEach unit undergoes single-pulse EAS screening at production level-not sample-only validation
MSL1 ratingSuitable for lead-free reflow up to 260 °C peak without popcorn or delamination risk
Green product (RoHS)Lead-free terminations and halogen-free molding compound compliant with EU Directive 2011/65/EU
175 °C operating temperatureEnables use in engine bay or under-hood modules where ambient exceeds 125 °C

Applications

Automotive Engine Control Unit (ECU) Power StageIndustrial 48 V DC-DC Converter Primary Switch

Use Scenario: High-current solenoid and fuel injector drive in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Low-side switching element controlling inductive loads with fast turn-off to minimize coil decay time.

Use Value: 455 mJ avalanche energy absorbs stored inductor energy safely without snubber circuits.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V LLC or phase-shifted full-bridge converter.

IC Role / Device Role / Timing Role: High-duty-cycle, high-frequency power switch handling >60 A RMS current.

Use Value: 5.6 mΩ RDS(on) reduces conduction loss to <2.7 W at 80 A, improving efficiency above 95%.

Onboard Charger (OBC) Bidirectional AC-DC StageElectric Power Steering (EPS) Motor Phase Leg

Use Scenario: Active rectification in bidirectional OBC PFC and inverter stages.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch in interleaved totem-pole topology.

Use Value: 0.6–1.3 V VSD and 55 ns trr minimize body diode conduction loss and reverse recovery spikes.

Use Scenario: Half-bridge leg in 3-phase EPS motor driver with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch managing 80 A peak phase current during torque assist.

Use Value: 1.1 K/W RthJC allows direct thermal coupling to aluminum heatsink, maintaining Tj < 150 °C at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N06S3L-06Same die, PG-TO263-3-2 surface-mount package; RthJA = 40 K/W on 6 cm² PCBBetter suited for automated SMT assembly and space-constrained board layoutsSelect when thermal path relies on PCB copper area rather than discrete heatsink
IPP80N06S3L-06Same die, PG-TO220-3-1 through-hole package; RthJC = 1.1 K/W identical, but lower mechanical robustnessPreferred for prototyping, low-volume industrial controls with manual assemblySelect when cost-sensitive volume production favors TO-220 tooling and legacy footprint compatibility

Compared with IPB80N06S3L-06 and IPP80N06S3L-06, the IPI80N06S3L06XK offers identical electrical performance and thermal resistance but provides superior mechanical stability and creepage in high-vibration automotive environments due to its reinforced PG-TO262 leadframe design.

Availability

IPI80N06S3L06XK is available at Aetrix Electronics and suitable for automotive engine control units, industrial 48 V DC-DC converters, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for IPI80N06S3L06XK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T2 power MOSFET product line, engineered specifically for high-current, medium-voltage automotive and industrial switching applications demanding low RDS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPI80N06S3L06XK?

The absolute maximum gate-source voltage is ±16 V, qualified at –5 V and +16 V per datasheet Rev. 1.1. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full RDS(on) optimization, with 5 V sufficient for partial turn-on in logic-level applications.

Is IPI80N06S3L06XK suitable for synchronous rectification in a 48 V buck converter?

Yes-it supports synchronous rectification via its low 0.6–1.3 V body diode forward voltage and 55 ns reverse recovery time. When used as a low-side switch with complementary high-side control, it eliminates Schottky losses and improves efficiency by 1–2% at 80 A output, provided gate timing avoids shoot-through.

Does IPI80N06S3L06XK require a heatsink in a 100 kHz, 80 A switching application?

Yes-a heatsink is mandatory. With 131–196 nC Qg and 5.6 mΩ RDS(on), switching and conduction losses exceed 5 W at full load. Using its 1.1 K/W RthJC, a heatsink maintaining TC ≤ 100 °C keeps Tj within 175 °C limit. Thermal interface material and mounting pressure must be controlled per Infineon AN2015-05.

How does the avalanche rating of IPI80N06S3L06XK compare to non-automotive equivalents?

It is 100% production-tested for 455 mJ single-pulse avalanche energy at ID = 40 A, unlike many industrial MOSFETs that specify only "designed for avalanche" without unit-level testing. This ensures consistent ruggedness in automotive inductive load switching, where unclamped inductive energy is routine and failure is unacceptable.

IPI80N06S3L06XK Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
196 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
9417 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI80N06S3L06XK FAQ

1.How can I place an order for IPI80N06S3L06XK through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N06S3L06XK on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N06S3L06XK reliable?

The price and inventory of IPI80N06S3L06XK are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N06S3L06XK is usually 5 days.

3.What payment methods are accepted for IPI80N06S3L06XK?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N06S3L06XK transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N06S3L06XK?

IPI80N06S3L06XK orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N06S3L06XK order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N06S3L06XK?

For technical support, including IPI80N06S3L06XK datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N06S3L06XK requirements.

6.How does Aetrix verify that IPI80N06S3L06XK is sourced from the original manufacturer or authorized distributors?

All IPI80N06S3L06XK products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N06S3L06XK meets industry standards.

7.What is the process for return or replacement of IPI80N06S3L06XK?

All IPI80N06S3L06XK units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N06S3L06XK, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N06S3L06XK part is unused and in its original packaging.

Return procedure for IPI80N06S3L06XK:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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