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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N06S407AKSA1

Name: IPI80N06S407AKSA1
Brand: Infineon Technologies
SKU: IPI80N06S407AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI80N06S407AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N06S407AKSA1.pdf

Description:: MOSFET N-CH 60V 80A TO262-3

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Product details

Overview

IPI80N06S407AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 60 V V_DS, 7.1 mΩ R_DS(on) max at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested, targeting high-reliability automotive power switching applications such as DC-DC converters and motor control stages.

For engineers reviewing the IPI80N06S407AKSA1 datasheet, IPI80N06S407AKSA1 pinout, IPI80N06S407AKSA1 application, or IPI80N06S407AKSA1 equivalent, key selection criteria include its 1.9 K/W thermal resistance (junction-to-case), 6.2 mΩ typical R_DS(on), 43–56 nC total gate charge, 3460–4500 pF input capacitance, and integrated body diode with 39 ns reverse recovery time.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust drive compatibility with standard 5 V and 10 V logic-level controllers, while the 6.0 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The MOSFET features a fully characterized reverse diode with 0.6–1.3 V forward voltage at 80 A and 38 nC reverse recovery charge, enabling reliable synchronous rectification and freewheeling operation. Thermal design is supported by MSL1 rating (260 °C peak reflow) and validated 175 °C continuous operation capability under defined PCB cooling conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive battery architectures and 12 V/24 V system rails.
R_DS(on) max	7.1 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for high-current power stages.
I_D continuous	80 A at T_C = 25 °C - Supports high-power load switching without external heatsink under moderate ambient conditions.
E_AS	71 mJ single-pulse avalanche energy - Provides robustness against inductive switching transients in motor drives and solenoid controls.
Q_g	43–56 nC - Determines gate driver power requirement and switching speed trade-off in PWM frequency range up to 200 kHz.
t_r/t_f	3 ns rise / 5 ns fall time - Enables fast edge control for reduced switching losses and EMI mitigation in compact power modules.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard microcontroller GPIOs and avoids unintended activation near ground noise margins.

Pinout & Package

Package: PG-TO262-3-1 (3-pin straight-lead variant of TO-220 footprint, lead-free, RoHS-compliant). Case temperature sensing point located at tab (drain-connected).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt for accurate current monitoring.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring low-inductance routing and gate resistor tuning to manage dV/dt and ringing.
Pin 3 (Drain)	Power output	Internally connected to metal tab; must be soldered to large copper area for thermal management and EMI shielding.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST.
100% avalanche tested	Each unit subjected to single-pulse inductive energy stress to guarantee minimum 71 mJ ruggedness without derating.
MSL1 reflow rating	Compatible with standard lead-free SMT assembly processes up to 260 °C peak temperature without popcorn or delamination risk.
Optimized body diode	39 ns t_rr and 38 nC Q_rr enable efficient freewheeling in buck converters and H-bridge topologies without external Schottky.
Green product	RoHS-compliant materials and halogen-free molding compound meet EU Directive 2011/65/EU and automotive ELV requirements.

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS)

Use Scenario: High-efficiency 12 V to 48 V bidirectional converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch handling 80 A continuous current with synchronized gate timing.

Use Value: 7.1 mΩ R_DS(on) minimizes conduction loss at high duty cycles, directly improving system efficiency by >1.2% versus 10 mΩ alternatives.

Use Scenario: Three-phase inverter driving 12 V BLDC assist motor in steering column module.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration with precise PWM edge control.

Use Value: 3 ns rise time and 1.9 K/W R_thJC allow 20 kHz switching with <50 °C junction rise, enabling compact heatsink design.

Onboard Charger (OBC) Input Stage

12 V Battery Protection Module

Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC front-end stage operating at 100 kHz.

IC Role / Device Role / Timing Role: Fast-switching MOSFET with low Crss (35–70 pF) to reduce Miller-induced shoot-through risk.

Use Value: 56 nC Q_g and 6.0 V gate plateau support stable gate drive under high dv/dt, reducing gate driver IC cost and complexity.

Use Scenario: Reverse polarity and overcurrent protection switch in vehicle infotainment power rail.

IC Role / Device Role / Timing Role: Load switch with integrated avalanche ruggedness for fault tolerance during jump-start events.

Use Value: 71 mJ E_AS withstands 100 V transient spikes without failure, eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S4-07	Same die, PG-TO220-3-1 package; higher R_thJA (62 K/W vs 40 K/W on PCB) due to smaller thermal pad contact area.	Better suited for through-hole prototyping or lower-power (<50 A) designs where mechanical mounting dominates thermal path.	Select when board space allows TO-220 mounting and thermal budget permits ~15% higher junction temperature rise at full load.
IPB80N06S4-07	Same die, PG-TO263-3-2 surface-mount package; identical R_DS(on) and Q_g, but requires reflow-compatible layout and stencil design.	Preferred for automated SMT production and space-constrained modules where thermal via density can achieve R_thJC-limited performance.	Select for volume automotive PCB assembly where automated placement, reflow yield, and thermal via optimization are available.

Compared with IPP80N06S4-07 and IPB80N06S4-07, the IPI80N06S407AKSA1 offers identical electrical performance in a PG-TO262-3-1 package that balances through-hole manufacturability with improved thermal interface versus TO-220, making it optimal for mid-volume automotive modules requiring manual rework access and controlled thermal impedance.

Availability

IPI80N06S407AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and onboard charger input stages requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IPI80N06S407AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T2 product line, engineered specifically for high-current, high-reliability 12 V and 48 V automotive power conversion, emphasizing avalanche ruggedness, thermal stability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPI80N06S407AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) specification and 6 V minimum for guaranteed turn-on across temperature and process variation.

Does IPI80N06S407AKSA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and control dV/dt. For 80 A switching at 100 kHz, a 3.5 Ω resistor is validated in the datasheet. Lower values increase switching speed but raise EMI risk; higher values reduce driver stress but increase switching losses proportionally to Q_g.

Can IPI80N06S407AKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increases with junction temperature) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors (10–20 mΩ) are required to ensure balanced dynamic current distribution during turn-on/turn-off transitions.

Is the drain tab electrically isolated from the package leads?

No - the metal tab is internally connected to the drain terminal (Pin 3). It must be electrically insulated from heatsinks using mica or ceramic washers unless the heatsink is referenced to drain potential. Thermal interface material must be non-conductive to prevent short circuits.

IPI80N06S407AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI80N06S407AKSA1 FAQ

1.How can I place an order for IPI80N06S407AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N06S407AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N06S407AKSA1 reliable?

The price and inventory of IPI80N06S407AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N06S407AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI80N06S407AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N06S407AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N06S407AKSA1?

IPI80N06S407AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N06S407AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N06S407AKSA1?

For technical support, including IPI80N06S407AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N06S407AKSA1 requirements.

6.How does Aetrix verify that IPI80N06S407AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80N06S407AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N06S407AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80N06S407AKSA1?

All IPI80N06S407AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N06S407AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N06S407AKSA1 part is unused and in its original packaging.

Return procedure for IPI80N06S407AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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