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Infineon Technologies IPI80N06S4L05AKSA1

Part No.:
IPI80N06S4L05AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI80N06S4L05AKSA1.pdf
Description:
MOSFET N-CH 60V 80A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,300

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Product details

Overview

IPI80N06S4L05AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 60 V VDS, 4.8 mΩ RDS(on) at VGS = 10 V and ID = 80 A, with 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters and motor control inverters where robust avalanche performance and low conduction loss are critical.

For engineers reviewing the IPI80N06S4L05AKSA1 datasheet, IPI80N06S4L05AKSA1 pinout, IPI80N06S4L05AKSA1 application, or IPI80N06S4L05AKSA1 equivalent, key selection criteria include its 1.4 K/W RthJC, 152 mJ single-pulse EAS, 80 A continuous drain current at TC = 100 °C, and 3.7 V gate plateau voltage under 80 A switching conditions.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low RDS(on) × Qg figure-of-merit while maintaining fast switching (tr = 4 ns, tf = 13 ns) and low gate charge (Qg = 83–110 nC). Its 6290–8180 pF Ciss and 1350–1755 pF Coss support hard-switched topologies up to 100 kHz.

The integrated body diode exhibits 0.6–1.3 V VSD at 80 A and 36 ns trr, enabling synchronous rectification and freewheeling in half-bridge configurations without external diodes. Avalanche ruggedness is validated to 152 mJ at ID = 40 A.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with transient overvoltage margin
RDS(on) max4.8 mΩ at VGS = 10 V, ID = 80 A - Enables ≤3.8 W conduction loss at full load in 80 A switch node
ID continuous80 A at TC = 25 °C - Supported by TO262 package thermal path with 1.4 K/W RthJC
EAS152 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off stress
Qg83–110 nC - Gate drive energy requirement determines minimum gate driver peak current (≥3 A @ 10 ns rise)
tr/tf4 ns / 13 ns - Fast edge rates reduce switching losses in high-frequency DC-DC converters
VGS(th)1.2–2.2 V - Low threshold enables reliable turn-on with 3.3 V logic-level gate drivers

Pinout & Package

Package: PG-TO262-3-1 (straight lead version of TO-220 compatible outline, isolated drain tab).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connected to PCB ground plane for thermal and electrical return path
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring <100 nA leakage; sensitive to ESD and layout-induced ringing
Pin 3 (Drain)Power outputInternally bonded to metal tab; must be soldered to large copper area for thermal dissipation and low-inductance current path

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling
175 °C operationEnables placement near heat sources (e.g., engine bay, power inverter modules) without derating below 80 A
100% avalanche testedEach unit undergoes single-pulse EAS screening at production test, ensuring guaranteed ruggedness in real-world fault events
Green Product (RoHS)Lead-free termination and halogen-free molding compound compliant with EU Directive 2011/65/EU and IPC-1752A
OptiMOS™-T2 trench architectureReduces RDS(on) × Qg by 35% vs. previous generation, improving efficiency in 100–200 kHz switching applications

Applications

Automotive DC-DC ConvertersElectric Power Steering (EPS) Inverters

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous switch handling 80 A continuous current with <100 ns dead-time control.

Use Value: 4.8 mΩ RDS(on) limits conduction loss to <3.1 W at 80 A, reducing heatsink size by 40% vs. 6.5 mΩ alternatives.

Use Scenario: Three-phase inverter driving 3 kW brushless motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switching element operating at 10–20 kHz PWM with integrated body diode freewheeling.

Use Value: 36 ns reverse recovery time minimizes cross-conduction loss and EMI during commutation, improving EMC compliance.

On-Board Charger (OBC) Input StageCommercial HVAC Blower Drives

Use Scenario: PFC boost switch in 3.3 kW single-phase OBC with active clamp topology.

IC Role / Device Role / Timing Role: Main switching transistor subjected to repetitive 600 V transients and 80 A peak current.

Use Value: 152 mJ EAS rating withstands >1000 avalanche events over lifetime, eliminating need for external snubbers.

Use Scenario: 2 kW variable-speed blower drive in rooftop HVAC units operating at ambient up to 70 °C.

IC Role / Device Role / Timing Role: Half-bridge leg switch in 3-phase inverter with forced-air cooling.

Use Value: 175 °C Tj rating allows full 80 A current delivery at case temperatures up to 100 °C, avoiding thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N06S4L-05Same die, PG-TO263-3-2 package with surface-mount leads and exposed drain padBetter thermal performance (RthJA = 40 K/W on 6 cm² PCB) but requires SMT reflow processSelect for space-constrained PCBs needing lower thermal resistance and automated assembly
IPP80N06S4L-05Same die, PG-TO220-3-1 package with bent leads and non-isolated drain tabLower cost and simpler through-hole mounting, but RthJC = 1.5 K/W and no isolationSelect for cost-sensitive industrial drives where isolation is not required and manual assembly is acceptable

Compared with IPB80N06S4L-05 and IPP80N06S4L-05, IPI80N06S4L05AKSA1 offers identical silicon performance in a straight-lead TO262 package-providing mechanical compatibility with TO220 footprints while retaining isolation and improved thermal interface versus TO220.

Availability

IPI80N06S4L05AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and on-board chargers requiring stable component supply across extended product lifecycles.

Supply support for IPI80N06S4L05AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion systems demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPI80N06S4L05AKSA1?

The absolute maximum VGS is ±16 V. Operation beyond this risks irreversible gate oxide breakdown. Recommended gate drive is 10 V for full RDS(on) utilization and 4.5 V for logic-level compatibility; gate resistors should limit dV/dt to avoid parasitic turn-on during high di/dt events.

Does IPI80N06S4L05AKSA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen oscillation and control switching speed. For 80 A switching with 10 V drive, a 3.5 Ω resistor yields td(on) ≈ 14 ns and td(off) ≈ 80 ns per datasheet test conditions. Lower values increase EMI risk; higher values raise switching losses proportionally to Qg.

How is thermal performance affected when mounted on a standard FR4 PCB without additional heatsinking?

With minimal footprint (no added copper), RthJA is 62 K/W, limiting continuous power dissipation to ~1.7 W at ΔT = 105 K. Using 6 cm² of 70 µm copper on one layer reduces RthJA to 40 K/W, enabling ~2.7 W dissipation-still insufficient for 80 A operation without forced air or heatsink contact to the drain tab.

Can IPI80N06S4L05AKSA1 replace older OptiMOS™-T1 devices in existing designs?

Yes-pin-compatible with IPP80N06S2L-05 and IPB80N06S2L-05 in same packages. Key improvements include 20% lower RDS(on), 15% lower Qg, and enhanced avalanche ruggedness (152 mJ vs. 120 mJ), allowing direct substitution with measurable efficiency gain and reduced thermal stress.

IPI80N06S4L05AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
8180 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI80N06S4L05AKSA1 FAQ

1.How can I place an order for IPI80N06S4L05AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N06S4L05AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N06S4L05AKSA1 reliable?

The price and inventory of IPI80N06S4L05AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N06S4L05AKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N06S4L05AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N06S4L05AKSA1?

IPI80N06S4L05AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N06S4L05AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N06S4L05AKSA1?

For technical support, including IPI80N06S4L05AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N06S4L05AKSA1 requirements.

6.How does Aetrix verify that IPI80N06S4L05AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80N06S4L05AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N06S4L05AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80N06S4L05AKSA1?

All IPI80N06S4L05AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N06S4L05AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N06S4L05AKSA1 part is unused and in its original packaging.

Return procedure for IPI80N06S4L05AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI80N06S4L05AKSA1 Tags

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