Infineon Technologies IPI80N08S406AKSA1

Overview

IPI80N08S406AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 80 V V_DS, 5.5 mΩ max R_DS(on) at 10 V V_GS, and 80 A continuous drain current at T_C = 100 °C. It delivers robust avalanche performance (270 mJ single-pulse E_AS) and operates up to 175 °C junction temperature, targeting high-reliability automotive DC-DC converters and motor control stages.

For engineers reviewing the IPI80N08S406AKSA1 datasheet, IPI80N08S406AKSA1 pinout, IPI80N08S406AKSA1 application, or IPI80N08S406AKSA1 equivalent, key selection criteria include its 1.0 K/W R_thJC, 5.0–5.8 mΩ typical R_DS(on), 3600–4800 pF C_iss, 12–24 nC Q_gs, and integrated body diode with 90 ns t_rr and 0.9–1.3 V V_SD.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables reliable drive from standard 3.3 V or 5 V logic-level controllers while maintaining strong noise immunity.

The MOSFET supports hard-switched topologies with verified unclamped inductive switching (UIS) capability and features a fully characterized reverse recovery profile (Q_rr = 60 nC, t_rr = 90 ns) critical for synchronous rectification and half-bridge phase-leg designs.

Key Specifications

Pinout & Package

Package: PG-TO262-3-1 (3-pin, straight lead, isolated tab), RoHS-compliant, MSL1 rated for 260 °C peak reflow, 175 °C maximum operating temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB80N08S406AKSA1 and IPP80N08S406AKSA1, IPI80N08S406AKSA1 balances mechanical robustness (TO262 leadframe), automotive qualification (AEC-Q101), and thermal performance (1.0 K/W R_thJC), making it optimal for mechanically stressed engine-bay power stages where reliability trumps lowest-cost packaging.

Availability

IPI80N08S406AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, engine control unit (ECU) power stages, and electric power steering (EPS) motor drivers requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPI80N08S406AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability 12 V and 24 V automotive power conversion and motor control applications.

FAQ

What is the maximum junction temperature and how does it impact thermal design?

The absolute maximum junction temperature is +175 °C. This rating enables operation in under-hood environments where ambient temperatures reach 125 °C, provided thermal resistance from junction to case (R_thJC = 1.0 K/W) and case to ambient are properly managed. Designers must ensure heatsink interface resistance remains below 0.5 K/W to avoid exceeding T_j at full 80 A load.

Is this MOSFET suitable for synchronous rectification in a 400 kHz buck converter?

Yes - its 90 ns reverse recovery time (t_rr), 60 nC reverse recovery charge (Q_rr), and soft recovery behavior minimize voltage overshoot and EMI during body-diode commutation. Combined with low 5.5 mΩ R_DS(on), it achieves >95% efficiency at 400 kHz with appropriate gate drive strength (≥2 A peak).

Does the device require a gate resistor, and what value is recommended?

A gate resistor is mandatory to dampen ringing and limit peak gate current. For 80 A switching with typical 12 V gate drive, a 4.7 Ω to 10 Ω resistor is recommended. Lower values (≤4.7 Ω) improve switching speed but increase EMI; higher values (>10 Ω) reduce dV/dt stress but raise switching losses proportionally to Q_g × f_sw.

How does the AEC-Q101 qualification differ from standard industrial qualification?

AEC-Q101 mandates additional stress tests including 1000-hour high-temperature gate bias, unbiased highly accelerated stress test (uHAST), and temperature cycling from −40 °C to +150 °C for 1000 cycles - all performed on packaged devices. These validate long-term reliability under automotive thermal and humidity extremes, unlike industrial-grade parts which typically only meet JEDEC JESD22 standards.