Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPI80P03P4L04AKSA1

Part No.:
IPI80P03P4L04AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI80P03P4L04AKSA1.pdf
Description:
MOSFET P-CH 30V 80A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,980

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPI80P03P4L04AKSA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET in PG-TO262-3-1 package, rated for -30 V VDS, 4.1 mΩ RDS(on) at VGS = -10 V and ID = -80 A, with 175 °C maximum junction temperature and AEC qualification for automotive reverse battery protection circuits.

For engineers reviewing the IPI80P03P4L04AKSA1 datasheet, IPI80P03P4L04AKSA1 pinout, IPI80P03P4L04AKSA1 application, or IPI80P03P4L04AKSA1 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, avalanche energy (410 mJ), thermal resistance (RthJC = 1.1 K/W), and AEC-Q101 compliance for harsh-environment automotive power path control.

Technical Context

This device operates as a high-current, low-side P-channel switch in reverse polarity protection circuits, where gate drive is referenced to system ground and source connects to battery positive. Its logic-level threshold (VGS(th) = -1.0 to -2.0 V) enables direct interface with 3.3 V/5 V microcontrollers without level-shifting.

Designed for continuous conduction up to -80 A at TC = 100 °C, it features 100% unclamped inductive switching (UIS) tested, integrated body diode with trr = 100 ns and Qrr = 80 nC, and optimized capacitance profile (Ciss = 8670–11300 pF, Crss = 65–130 pF) for fast, low-loss switching in DC-fed protection stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-30 V - Maximum drain-source blocking voltage for 12 V automotive systems with load dump margin
RDS(on) @ VGS = -10 V3.4–4.1 mΩ - Enables <1 W conduction loss at 80 A, critical for thermally constrained engine bay layouts
ID (continuous)-80 A @ TC = 100 °C - Sustained current capability matching alternator output and starter motor surge demands
EAS410 mJ - Confirmed single-pulse avalanche energy supporting robustness against inductive kickback in solenoid/relay drivers
RthJC1.1 K/W - Junction-to-case thermal resistance enabling direct heatsink mounting for passive thermal management
Qg125–160 nC - Total gate charge determining drive strength requirement for <150 ns turn-off delay in fast-protection applications
tr/tf11 ns / 40 ns - Rise/fall times enabling sub-µs response to reverse polarity events without excessive EMI

Pinout & Package

PG-TO262-3-1 package: isolated tab (drain), 3-pin through-hole variant with standard TO-220 footprint compatibility; drain-connected metal tab enables direct thermal coupling to heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalConnects to system ground; carries full load current and defines reference for gate drive
Pin 2 (Gate)Control inputLogic-level compatible; requires <2.0 V negative threshold to fully enhance; minimal drive current needed
Pin 3 (Drain)High-side connection pointConnected to battery positive; tab is electrically tied to drain for low-inductance thermal path

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per JESD47
100% UIS testedEach unit screened for 410 mJ single-pulse avalanche energy-no derating required in inductive load protection
Logic-level gateVGS(th) max -2.0 V ensures reliable turn-on with 3.3 V MCU GPIO, eliminating external level shifters
Green RoHS packageHalogen-free, lead-free PG-TO262-3-1 meets ELV and WEEE directives for end-of-life vehicle compliance
175 °C operationExtended junction temperature rating supports placement near heat sources (e.g., ECUs, inverters) without thermal throttling

Applications

Automotive Reverse Battery Protection12 V DC Power Distribution Unit

Use Scenario: Prevents damage when jumper cables are incorrectly connected during vehicle jump-starting or battery replacement.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as polarity-sensitive series switch; turns off within 100 ns of reverse voltage detection.

Use Value: Eliminates need for bulky series diodes; reduces voltage drop from ~0.7 V to <50 mV at 80 A, improving system efficiency and thermal margin.

Use Scenario: Protects downstream infotainment, ADAS, and telematics modules from reverse polarity in centralized power rail architecture.

IC Role / Device Role / Timing Role: Main protection switch in fused 12 V distribution board; handles continuous 80 A loads with <1.1 K/W thermal path to chassis.

Use Value: Enables compact PCB layout with integrated heatsinking via drain tab; supports hot-swap capability without latch-up.

Engine Control Unit (ECU) Power Input StageCommercial Vehicle Starter Circuit Protection

Use Scenario: Secures ECU main power input against accidental reverse connection during service or harness misrouting.

IC Role / Device Role / Timing Role: Primary reverse-polarity barrier upstream of LDOs and DC-DC converters; withstands 175 °C ambient under hood.

Use Value: Maintains functional safety integrity (ASIL-B compatible design); eliminates field failures linked to incorrect battery installation.

Use Scenario: Guards heavy-duty starter relay driver circuitry in trucks and buses where battery polarity errors occur during maintenance.

IC Role / Device Role / Timing Role: High-current shutoff element rated for -320 A pulsed drain current during cranking surges.

Use Value: Survives repeated 100 µs avalanche events during starter engagement; avoids fuse replacement and downtime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel reverse battery protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80P03P4L04AKSA1PG-TO263-3-2 package; identical die, lower RthJA on PCB (40 K/W with 6 cm² copper)Better suited for SMD-based automotive modules with limited board spaceSelect when surface-mount assembly and enhanced PCB thermal performance are prioritized
IPP80P03P4L04AKSA1PG-TO220-3-1 package; same electrical specs but higher RthJC (1.3 K/W) and no MSL1 reflow ratingPreferred for legacy through-hole designs and non-automotive industrial useSelect when cost-sensitive prototyping or non-AEC environments require proven TO-220 form factor

Compared with IPB80P03P4L04AKSA1 and IPP80P03P4L04AKSA1, IPI80P03P4L04AKSA1 offers optimal balance of AEC qualification, through-hole manufacturability, and thermal performance-making it the default choice for new automotive reverse protection designs requiring MSL1 reflow compatibility and 175 °C operation.

Availability

IPI80P03P4L04AKSA1 is available at Aetrix Electronics and suitable for automotive reverse battery protection, 12 V power distribution units, and ECU input stage protection requiring stable component supply across production lifecycles.

Supply support for IPI80P03P4L04AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-P2 product line, engineered specifically for high-efficiency, high-reliability reverse polarity protection in 12 V automotive systems-emphasizing low RDS(on), rugged avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum gate-source voltage rating for IPI80P03P4L04AKSA1?

The absolute maximum gate-source voltage is -16 V, with recommended operating range between 0 V and -10 V. Exceeding -16 V risks permanent gate oxide damage. The device is designed for logic-level drive, so -4.5 V provides full enhancement with RDS(on) ≤ 7 mΩ, making it compatible with standard 3.3 V and 5 V microcontroller outputs without external level shifting.

Does IPI80P03P4L04AKSA1 require a gate resistor for automotive applications?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current during fast switching, especially in noisy automotive environments. While not strictly required for basic on/off operation, it improves EMI performance and prevents spurious turn-on due to dv/dt coupling. The device's Qg of 125–160 nC means a 22 Ω resistor yields ~3.5 ns RC time constant-well within safe drive timing margins.

How does the body diode performance impact its use in reverse battery protection?

The integrated body diode has VSD = -1.3 V at -80 A and trr = 100 ns, enabling fast recovery during polarity reversal transients. In normal forward operation, it remains reverse-biased and inactive. During reverse connection, the diode conducts briefly before the MOSFET turns off, limiting fault current rise time and reducing stress on upstream fuses-critical for meeting ISO 7637-2 pulse 4 immunity requirements.

Is IPI80P03P4L04AKSA1 suitable for hot-swap applications in 12 V systems?

Yes-it supports controlled hot-swap insertion due to its 175 °C junction rating, 100% UIS testing, and low RDS(on). When paired with appropriate gate slew-rate control (e.g., RC network), it limits inrush current during plug-in events. Its -80 A continuous rating and -320 A pulsed capability handle typical hot-swap surge profiles defined in IEEE 1626 and MIL-STD-1399, provided PCB layout maintains <1.1 K/W thermal path to heatsink.

IPI80P03P4L04AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs (Max):
+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
11300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
137W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3

IPI80P03P4L04AKSA1 FAQ

1.How can I place an order for IPI80P03P4L04AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80P03P4L04AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80P03P4L04AKSA1 reliable?

The price and inventory of IPI80P03P4L04AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80P03P4L04AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI80P03P4L04AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80P03P4L04AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80P03P4L04AKSA1?

IPI80P03P4L04AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80P03P4L04AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80P03P4L04AKSA1?

For technical support, including IPI80P03P4L04AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80P03P4L04AKSA1 requirements.

6.How does Aetrix verify that IPI80P03P4L04AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80P03P4L04AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80P03P4L04AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80P03P4L04AKSA1?

All IPI80P03P4L04AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80P03P4L04AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80P03P4L04AKSA1 part is unused and in its original packaging.

Return procedure for IPI80P03P4L04AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI80P03P4L04AKSA1 Tags

  • IPI80P03P4L04AKSA1
  • IPI80P03P4L04AKSA1 PDF
  • IPI80P03P4L04AKSA1 Datasheet
  • IPI80P03P4L04AKSA1 Specifications
  • IPI80P03P4L04AKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPI80P03P4L04AKSA1
  • Buy IPI80P03P4L04AKSA1
  • IPI80P03P4L04AKSA1 Price
  • IPI80P03P4L04AKSA1 Distributor
  • IPI80P03P4L04AKSA1 Supplier
  • IPI80P03P4L04AKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER