Infineon Technologies IPI80P03P4L04AKSA1
- Part No.:
- IPI80P03P4L04AKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI80P03P4L04AKSA1.pdf
- Description:
- MOSFET P-CH 30V 80A TO262-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,980
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPI80P03P4L04AKSA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET in PG-TO262-3-1 package, rated for -30 V VDS, 4.1 mΩ RDS(on) at VGS = -10 V and ID = -80 A, with 175 °C maximum junction temperature and AEC qualification for automotive reverse battery protection circuits.
For engineers reviewing the IPI80P03P4L04AKSA1 datasheet, IPI80P03P4L04AKSA1 pinout, IPI80P03P4L04AKSA1 application, or IPI80P03P4L04AKSA1 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, avalanche energy (410 mJ), thermal resistance (RthJC = 1.1 K/W), and AEC-Q101 compliance for harsh-environment automotive power path control.
Technical Context
This device operates as a high-current, low-side P-channel switch in reverse polarity protection circuits, where gate drive is referenced to system ground and source connects to battery positive. Its logic-level threshold (VGS(th) = -1.0 to -2.0 V) enables direct interface with 3.3 V/5 V microcontrollers without level-shifting.
Designed for continuous conduction up to -80 A at TC = 100 °C, it features 100% unclamped inductive switching (UIS) tested, integrated body diode with trr = 100 ns and Qrr = 80 nC, and optimized capacitance profile (Ciss = 8670–11300 pF, Crss = 65–130 pF) for fast, low-loss switching in DC-fed protection stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage for 12 V automotive systems with load dump margin |
| RDS(on) @ VGS = -10 V | 3.4–4.1 mΩ - Enables <1 W conduction loss at 80 A, critical for thermally constrained engine bay layouts |
| ID (continuous) | -80 A @ TC = 100 °C - Sustained current capability matching alternator output and starter motor surge demands |
| EAS | 410 mJ - Confirmed single-pulse avalanche energy supporting robustness against inductive kickback in solenoid/relay drivers |
| RthJC | 1.1 K/W - Junction-to-case thermal resistance enabling direct heatsink mounting for passive thermal management |
| Qg | 125–160 nC - Total gate charge determining drive strength requirement for <150 ns turn-off delay in fast-protection applications |
| tr/tf | 11 ns / 40 ns - Rise/fall times enabling sub-µs response to reverse polarity events without excessive EMI |
Pinout & Package
PG-TO262-3-1 package: isolated tab (drain), 3-pin through-hole variant with standard TO-220 footprint compatibility; drain-connected metal tab enables direct thermal coupling to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Connects to system ground; carries full load current and defines reference for gate drive |
| Pin 2 (Gate) | Control input | Logic-level compatible; requires <2.0 V negative threshold to fully enhance; minimal drive current needed |
| Pin 3 (Drain) | High-side connection point | Connected to battery positive; tab is electrically tied to drain for low-inductance thermal path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per JESD47 |
| 100% UIS tested | Each unit screened for 410 mJ single-pulse avalanche energy-no derating required in inductive load protection |
| Logic-level gate | VGS(th) max -2.0 V ensures reliable turn-on with 3.3 V MCU GPIO, eliminating external level shifters |
| Green RoHS package | Halogen-free, lead-free PG-TO262-3-1 meets ELV and WEEE directives for end-of-life vehicle compliance |
| 175 °C operation | Extended junction temperature rating supports placement near heat sources (e.g., ECUs, inverters) without thermal throttling |
Applications
| Automotive Reverse Battery Protection | 12 V DC Power Distribution Unit |
|---|---|
Use Scenario: Prevents damage when jumper cables are incorrectly connected during vehicle jump-starting or battery replacement. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as polarity-sensitive series switch; turns off within 100 ns of reverse voltage detection. Use Value: Eliminates need for bulky series diodes; reduces voltage drop from ~0.7 V to <50 mV at 80 A, improving system efficiency and thermal margin. | Use Scenario: Protects downstream infotainment, ADAS, and telematics modules from reverse polarity in centralized power rail architecture. IC Role / Device Role / Timing Role: Main protection switch in fused 12 V distribution board; handles continuous 80 A loads with <1.1 K/W thermal path to chassis. Use Value: Enables compact PCB layout with integrated heatsinking via drain tab; supports hot-swap capability without latch-up. |
| Engine Control Unit (ECU) Power Input Stage | Commercial Vehicle Starter Circuit Protection |
Use Scenario: Secures ECU main power input against accidental reverse connection during service or harness misrouting. IC Role / Device Role / Timing Role: Primary reverse-polarity barrier upstream of LDOs and DC-DC converters; withstands 175 °C ambient under hood. Use Value: Maintains functional safety integrity (ASIL-B compatible design); eliminates field failures linked to incorrect battery installation. | Use Scenario: Guards heavy-duty starter relay driver circuitry in trucks and buses where battery polarity errors occur during maintenance. IC Role / Device Role / Timing Role: High-current shutoff element rated for -320 A pulsed drain current during cranking surges. Use Value: Survives repeated 100 µs avalanche events during starter engagement; avoids fuse replacement and downtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel reverse battery protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB80P03P4L04AKSA1 | PG-TO263-3-2 package; identical die, lower RthJA on PCB (40 K/W with 6 cm² copper) | Better suited for SMD-based automotive modules with limited board space | Select when surface-mount assembly and enhanced PCB thermal performance are prioritized |
| IPP80P03P4L04AKSA1 | PG-TO220-3-1 package; same electrical specs but higher RthJC (1.3 K/W) and no MSL1 reflow rating | Preferred for legacy through-hole designs and non-automotive industrial use | Select when cost-sensitive prototyping or non-AEC environments require proven TO-220 form factor |
Compared with IPB80P03P4L04AKSA1 and IPP80P03P4L04AKSA1, IPI80P03P4L04AKSA1 offers optimal balance of AEC qualification, through-hole manufacturability, and thermal performance-making it the default choice for new automotive reverse protection designs requiring MSL1 reflow compatibility and 175 °C operation.
Availability
IPI80P03P4L04AKSA1 is available at Aetrix Electronics and suitable for automotive reverse battery protection, 12 V power distribution units, and ECU input stage protection requiring stable component supply across production lifecycles.
Supply support for IPI80P03P4L04AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.
This device belongs to the OptiMOS™-P2 product line, engineered specifically for high-efficiency, high-reliability reverse polarity protection in 12 V automotive systems-emphasizing low RDS(on), rugged avalanche capability, and AEC-Q101 compliance.
FAQ
What is the maximum gate-source voltage rating for IPI80P03P4L04AKSA1?
The absolute maximum gate-source voltage is -16 V, with recommended operating range between 0 V and -10 V. Exceeding -16 V risks permanent gate oxide damage. The device is designed for logic-level drive, so -4.5 V provides full enhancement with RDS(on) ≤ 7 mΩ, making it compatible with standard 3.3 V and 5 V microcontroller outputs without external level shifting.
Does IPI80P03P4L04AKSA1 require a gate resistor for automotive applications?
A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current during fast switching, especially in noisy automotive environments. While not strictly required for basic on/off operation, it improves EMI performance and prevents spurious turn-on due to dv/dt coupling. The device's Qg of 125–160 nC means a 22 Ω resistor yields ~3.5 ns RC time constant-well within safe drive timing margins.
How does the body diode performance impact its use in reverse battery protection?
The integrated body diode has VSD = -1.3 V at -80 A and trr = 100 ns, enabling fast recovery during polarity reversal transients. In normal forward operation, it remains reverse-biased and inactive. During reverse connection, the diode conducts briefly before the MOSFET turns off, limiting fault current rise time and reducing stress on upstream fuses-critical for meeting ISO 7637-2 pulse 4 immunity requirements.
Is IPI80P03P4L04AKSA1 suitable for hot-swap applications in 12 V systems?
Yes-it supports controlled hot-swap insertion due to its 175 °C junction rating, 100% UIS testing, and low RDS(on). When paired with appropriate gate slew-rate control (e.g., RC network), it limits inrush current during plug-in events. Its -80 A continuous rating and -320 A pulsed capability handle typical hot-swap surge profiles defined in IEEE 1626 and MIL-STD-1399, provided PCB layout maintains <1.1 K/W thermal path to heatsink.
IPI80P03P4L04AKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs:
- 160 nC @ 10 V
- Vgs (Max):
- +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 137W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI80P03P4L04AKSA1 FAQ
1.How can I place an order for IPI80P03P4L04AKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI80P03P4L04AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI80P03P4L04AKSA1 reliable?
The price and inventory of IPI80P03P4L04AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80P03P4L04AKSA1 is usually 5 days.
3.What payment methods are accepted for IPI80P03P4L04AKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80P03P4L04AKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI80P03P4L04AKSA1?
IPI80P03P4L04AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI80P03P4L04AKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI80P03P4L04AKSA1?
For technical support, including IPI80P03P4L04AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80P03P4L04AKSA1 requirements.
6.How does Aetrix verify that IPI80P03P4L04AKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI80P03P4L04AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80P03P4L04AKSA1 meets industry standards.
7.What is the process for return or replacement of IPI80P03P4L04AKSA1?
All IPI80P03P4L04AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80P03P4L04AKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI80P03P4L04AKSA1 part is unused and in its original packaging.
Return procedure for IPI80P03P4L04AKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPI80P03P4L04AKSA1 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
