Infineon Technologies IPI80P03P4L07AKSA1

Overview

IPI80P03P4L07AKSA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET optimized for reverse battery protection in automotive and industrial power systems. It delivers -80 A continuous drain current at T_C = 25 °C with V_GS = -10 V, features R_DS(on) = 6.9 mΩ (SMD version), operates up to +175 °C junction temperature, and is AEC-Q101 qualified.

For engineers reviewing the IPI80P03P4L07AKSA1 datasheet, IPI80P03P4L07AKSA1 pinout, IPI80P03P4L07AKSA1 application, or IPI80P03P4L07AKSA1 equivalent, key selection criteria include its -30 V V_DS, 100% avalanche tested ruggedness, MSL1 reflow compatibility, RoHS-compliant green package, and thermal resistance R_thJC = 1.7 K/W for high-reliability power path design.

Technical Context

This device implements a trench-based OptiMOS®-P2 silicon structure enabling low R_DS(on) while maintaining robust avalanche capability. Its gate threshold voltage range of -1.0 V to -2.0 V ensures reliable turn-on with standard 3.3 V/5 V logic-level drivers under automotive supply conditions.

The MOSFET supports unidirectional reverse-polarity protection via source-to-battery connection, leveraging its integrated body diode with V_SD = -1.3 V at -80 A and t_rr = 50 ns. Thermal performance is defined by R_thJC = 1.7 K/W and R_thJA = 40 K/W on 6 cm² PCB copper area - critical for sustained high-current operation in confined enclosures.

Key Specifications

Pinout & Package

Package: PG-TO262-3-1 (TO-262 variant, straight leads, isolated tab). The drain is internally connected to the metal tab for low-inductance thermal and electrical path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel reverse battery protection applications.

Compared with IPB80P03P4L-07 and IPP80P03P4L-07, the IPI80P03P4L07AKSA1 offers identical electrical performance in a TO-262 package - balancing thermal efficiency, manufacturability, and mechanical robustness for mid-volume automotive production.

Availability

IPI80P03P4L07AKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V DC distribution panels, and off-highway equipment power interfaces requiring stable component supply across extended product lifecycles.

Supply support for IPI80P03P4L07AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-P2 P-channel MOSFET product line, engineered specifically for high-current reverse battery protection and load switching in automotive and industrial environments demanding AEC-Q101 compliance and extreme thermal resilience.

FAQ

What is the maximum allowable gate-source voltage for IPI80P03P4L07AKSA1?

The absolute maximum V_GS is ±16 V, with recommended operating range limited to -10 V for full R_DS(on) performance and -4.5 V for logic-level compatibility. Exceeding -16 V risks permanent gate oxide damage, while operation below -1.0 V may result in incomplete turn-on and elevated conduction losses.

Can IPI80P03P4L07AKSA1 be used in parallel configurations?

Yes - its negative temperature coefficient of R_DS(on) (increasing resistance with temperature) enables inherently self-balancing current sharing. For stable parallel operation, match gate drive impedance, ensure symmetrical PCB layout, and maintain uniform thermal coupling across devices to avoid localized hot spots.

Is the metal tab electrically isolated in the PG-TO262 package?

No - the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink is mandatory unless the heatsink is referenced to the drain potential. Use insulating thermal pads or mica washers with appropriate dielectric strength (>500 V) for safe mounting.

Does IPI80P03P4L07AKSA1 require external gate resistors for automotive EMI compliance?

A gate resistor of 10–47 Ω is recommended to dampen ringing caused by parasitic inductance in high-di/dt switching. This reduces radiated emissions during turn-on/turn-off transitions and prevents false triggering from voltage overshoot - especially critical in CAN-bus adjacent circuits and ISO 11452-4 compliant designs.